STMICROELECTRONICS EMIF06

EMIF06-mSD01F2
IPAD™
Mini and micro SD Card - EMI filtering and 25 kV ESD protection
Main application
Mini and micro (T-Flash) Secure Digital memory
card in mobile phones and communication
systems
Description
The EMIF06-mSD01F2 is a highly integrated
device based on IPAD technology with the
following functions:
■
ESD protection to comply with IEC standard
■
EMI Filtering to reject mobile phone
frequencies
Flip-Chip
(16 Bumps)
Pin configuration (bump side)
Benefits
4
■
EMI Low-pass-filter
■
ESD protection ±25 kV (IEC 61000-4-2)
■
Integrated pull up resistors to prevent bus
floating when no card is connected
B
■
50 Mhz clock frequency compatibility with
Cline< 20 pF
C
■
Low power consumption
D
■
Easy Layout thanks to smart pin-out
configuration
■
Very low PCB space consuming
■
3
2
1
A
A1
DATA0
C1
CMD
High reliability offered by monolithic integration
A2
DATA1
C2
Vss
■
Reduction of parasitic elements thanks to CSP
integration
A3
SDDATA1
C3
Vss
A4
SDDATA0
C4
SDCMD
■
Lead free package
B1
CLK
D1
DATA3/CD
■
Coated version option upon request
B2
Vcc
D2
DATA2
Complies with the following standards:
B3
Vss
D3
SDDATA2
IEC 61000-4-2
level 4
B4
SDCLK
D4
SDDATA3/CD
15 kV (air discharge)
8 kV (contact discharge)
MIL STD 883G - Method 3015-7 Class 3A
SD Card Specification Ver. 1.01
MicroSD Card Specification Ver. 1.0
Physical layer specification, Part 1 vesion 1.1
Order code
Part Number
Marking
EMIF06-mSD01F2
HJ
TM: IPAD is a trademeark of STMicroelectronics
February 2007
Rev 1
1/7
www.st.com
7
Characteristics
1
EMIF06-mSD01F2
Characteristics
Table 1.
Absolute ratings (limiting values)
Symbol
Parameter and test conditions
Value
Unit
VPP
ESD discharge IEC 61000-4-2, air discharge
ESD discharge IEC 61000-4-2, contact discharge
25
25
kV
Vin
Maximum input voltage
5.5
V
Tj
Maximum junction temperature
125
°C
- 40 to + 85
°C
125
°C
Top
Operating temperature range
Tstg
Storage temperature range
Figure 1.
EMIF06-mSD01F2 configuration
Vcc
R9
R10
R11 R12 R13
R1
Host
Clk
CMD
Data0
SDClk
SDCMD
SDData0
R2
R3
R4
Data1
SDData1
R5
Data2
R6
Data3/CD
SDData3/CD
Vss
Table 2.
Vss
Electrical characteristics
Symbol
Test conditions
VBR
IR = 1 mA
IRM
VRM = 3 V
Min.
Typ.
14
16
Max.
Unit
V
0.1
µA
R1, R2, R3, R4, R5, R6
Tolerance ±20%
40
Ω
R9, R10, R11, R12, R13
Tolerance ±30%
25
kΩ
V = 0 V, F = 1 MHz Vosc = 30 mV
17
Cline
2/7
Card
SDData2
20
pF
EMIF06-mSD01F2
Figure 2.
Characteristics
Frequency response for
line D3/D2 - VCC not connected
Figure 3.
dB
dB
0.00
Frequency response for
line C1/B4 - VCC not connected
0.00
-10.00
-10.00
-20.00
-30.00
-20.00
-40.00
-30.00
-50.00
-60.00
-40.00
-70.00
F (Hz)
F (Hz)
-50.00
-80.00
1.0M
3.0M
10.0M
30.0M
100.0M
300.0M
1.0G
3.0G
1.0M
D2-D3
Figure 4.
ESD response to IEC 61000-4-2
(+15 kV air discharge) on one imput
(Vin) and one output (Vout)
Figure 6.
Junction capacitance versus
reverse applied voltage
CLK line (typical values)
14
3.0M
10.0M
30.0M
100.0M
300.0M
1.0G
3.0G
C1-B4
Figure 5.
ESD response to IEC 61000-4-2
(-15 kV air discharge) on one imput
(Vin) and one output (Vout)
CLINE (pF)
12
10
8
6
4
2
VLINE (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
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Technical information
2
EMIF06-mSD01F2
Technical information
Figure 7.
T-Flash connection diagram recommendation
(MicroSD Specification Ver 1.0)
RDAT RCMD
CMD
DAT0~3
CLK
C 1 C2 C3
Pin
Pin
Pin
Pin
Pin
Pin
Pin
Pin
1
2
3
4
5
6
7
8
EMIF06-mSD01F2
HOST
Pull-up resistance RDAT and RCMD are implemented to prevent bus floating when no card is
inserted or when all card drivers are in high impedance mode. Resistance values should be
set between 10 kΩ and 100 kΩ .
The pull-up resistors and capacitors described in the above recommendation are integrated
in the EMIF06-mSD01F2. This makes the EMIF06-mSD01F2 an easy "plug and play"
solution to implement secured T-flash, mini-SD card terminations.
Figure 8.
Layout recommendation
DAT1
DAT0
VSS
DAT1
CLK
DAT0
VCC
CLK
NC
CMD
NC
DAT3/CD
VSS
DAT2
Input
Output
CMD
DAT3/CD
Top level
Second level
Top View
4/7
DAT2
GND
EMIF06-mSD01F2
3
Ordering information scheme
Ordering information scheme
EMIF
yy
-
xxx zz
Fx
EMI Filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
F = Flip-Chip
x = 2: Lead free Pitch = 500 µm, Bump = 315 µm
Package information
Figure 9.
Flip-Chip Package dimensions
500 µm ± 50
650 µm ± 65
315 µm ± 50
1.92 mm ± 50 µm
500 µm ± 50
4
1.92 mm ± 50 µm
Figure 10. Foot print recommendations Figure 11. Marking
Copper pad Diameter:
250 µm recommended , 300 µm max
Solder stencil opening: 330 µm
Solder mask opening recommendation:
340 µm min for 300 µm copper pad diameter
Dot, ST logo
xx = marking
z = manufacturing location
yww = datecode
(y = year
ww = week)
E
x x z
y w w
5/7
Ordering information
EMIF06-mSD01F2
Figure 12. Flip-Chip Tape and reel specification
Dot identifying Pin A1 location
Ø 1.5 +/- 0.1
1.75 +/- 0.1
4 +/- 0.1
3.5 +/- 0.1
STE
xxz
yww
STE
xxz
yww
STE
xxz
yww
8 +/- 0.3
0.73 +/- 0.05
4 +/- 0.1
User direction of unreeling
All dimensions in mm
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
Note:
More packing information is available in the application notes:
AN1235: “Flip-Chip: Package description and recommendations for use”
AN1751: "EMI Filters: Recommendations and measurements"
5
6
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Ordering information
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
EMIF06-mSD01F2
HJ
Flip-Chip
5.3 mg
5000
Tape and reel 7”
Revision history
Date
Revision
02-Feb-2007
1
Description of Changes
First issue.
EMIF06-mSD01F2
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