STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V <0.45Ω 10A STF11NM60N 650V <0.45Ω 10A (1) STP11NM60N 650V <0.45Ω 10A 1 2 IPAK TO-220 3 1. Limited only by maximum temperature allowed 1 3 DPAK ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistancel Description 1 2 TO-220FP Internal schematic diagram This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Applications ■ Switching application Order codes Part number Marking Package Packaging STD11NM60N-1 D11NM60N IPAK Tube STD11NM60N D11NM60N DPAK Tape & reel STP11NM60N P11NM60N TO-220 Tube STF11NM60N F11NM60N TO-220FP Tube November 2006 Rev 2 1/17 www.st.com 17 Contents STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 ................................................ 9 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220/ DPAK/IPAK TO-220FP VDS Drain-source voltage (VGS=0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25°C 10 10(1) A ID Drain current (continuous) at TC = 100°C 6.3 6.3 (1) A IDM (2) Drain current (pulsed) 40 40(1) A PTOT Total dissipation at TC = 25°C 100 25 W Derating factor 0.8 0.2 W/°C dv/dt (3) VISO Tj Tstg Peak diode recovery voltage slope 15 Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) -- Operating junction temperature Storage temperature V/ns 2500 V -55 to 150 °C DPAK/IPAK TO-220FP Unit 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤10A, di/dt ≤400A/µs, VDD =80% V(BR)DSS Table 2. Thermal data TO-220 Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-amb Max Tl Table 3. Symbol Maximum lead temperature for soldering purpose 1.25 62.5 100 5 °C/W 62.5 °C/W 300 °C Max value Unit Avalanche characteristics Parameter IAS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 3.5 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD= 50V) 200 mJ 3/17 Electrical characteristics 2 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS dv/dt(1) 1. Parameter Test conditions Drain-source breakdown voltage ID = 1mA, VGS= 0 Drain-source voltage slope Vdd=400V,Id=5A, Vgs=10V Min. Typ. Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 5A Max. 600 45 V/ns 1 10 µA µA ±100 nA 3 4 V 0.37 0.45 Ω Typ. Max. Unit VDS=Max rating,Tc=125°C 2 Unit V VDS=Max rating, IDSS Characteristics value at turn off on inductive load Table 5. Symbol Dynamic Parameter gfs(1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15V, ID= 5A Min. 7.5 S VDS =50V, f=1MHz, VGS=0 850 44 5 pF pF pF Equivalent ouput capacitance VGS=0, VDS =0V to 480V 130 pF Rg Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20mV open drain 3.7 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge 31 4.2 15.9 nC nC nC Coss eq.(2) 1. On/off states ID = 10A VDD=480V, ID = 5A VGS =10V (see Figure 18) Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min Typ Max 22 18.5 50 12 VDD=300V, ID=5A, RG=4.7Ω, VGS=10V (see Figure 17) Unit ns ns ns ns Source drain diode Parameter Test conditions Min Typ Source-drain current Source-drain current (pulsed) Max Unit 10 40 A A 1.3 V Forward on voltage ISD = 10A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=10A, di/dt =100A/µs, VDD=100V, Tj=25°C (see Figure 22) 340 3.26 19.2 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current VDD=100V di/dt =100A/µs, ISD=10A Tj=150°C (see Figure 22) 460 4.42 19.2 ns µC A Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/17 Electrical characteristics STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for DPAK / IPAK Figure 6. 6/17 Thermal impedance for DPAK / IPAK STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Electrical characteristics Figure 7. Output characterisics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 7/17 Electrical characteristics STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Figure 13. Normalized gate threshold voltage vs temperature Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized BVDSS vs temperature 8/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N 3 Test circuit Test circuit Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/17 Package mechanical data 4 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 10/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/17 Package mechanical data STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/17 L5 1 2 3 L4 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 13/17 Package mechanical data STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N DPAK MECHANICAL DATA mm. inch DIM. MAX. MIN. A A1 A2 B b4 MIN. 2.2 0.9 0.03 0.64 5.2 2.4 1.1 0.23 0.9 5.4 0.086 0.035 0.001 0.025 0.204 0.094 0.043 0.009 0.035 0.212 C C2 D D1 E E1 e e1 H L (L1) L2 L4 0.45 0.48 6 0.6 0.6 6.2 0.017 0.019 0.236 0.023 0.023 0.244 6.6 0.252 R V2 TYP 5.1 6.4 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.260 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 14/17 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 15/17 Revision history 6 STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Revision history Table 8. 16/17 Revision history Date Revision Changes 03-Aug-2006 1 First release 14-Nov-2006 2 Complete version STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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