STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET Features Type VDSS RDS(on) ID STD7NM80 800 V < 1.05 Ω 6.5 A STD7NM80-1 800 V < 1.05 Ω 6.5 A STF7NM80 800 V < 1.05 Ω 6.5 A STP7NM80 800 V < 1.05 Ω 6.5 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ 3 3 1 2 1 TO-220FP TO-220 3 3 2 1 1 Low gate input resistance 2 DPAK IPAK Application ■ Switching applications Figure 1. Internal schematic diagram Description MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics. $ ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STD7NM80 D7NM80 DPAK Tape and reel STD7NM80-1 D7NM80 IPAK Tube STF7NM80 F7NM80 TO-220FP Tube STP7NM80 P7NM80 TO-220 Tube October 2009 Doc ID 12573 Rev 3 1/17 www.st.com 17 Contents STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, IPAK DPAK VDS Drain-source voltage (VGS=0) 800 VGS Gate-source voltage ± 30 ID Drain current (continuous) at TC = 25 °C Unit TO-220FP 6.5 V V 6.5 (1) (1) A Drain current (continuous) at TC = 100 °C 4 4 IDM (2) Drain current (pulsed) 26 26 (1) A PTOT Total dissipation at TC = 25 °C 90 25 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) -- 2500 V Tj Tstg Operating junction temperature Storage temperature ID -55 to 150 A °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Tl Table 4. Symbol Maximum lead temperature for soldering purpose IPAK, DPAK TO-220 1.38 62.5 100 TO-220FP Unit 5 °C/W 62.5 °C/W 300 °C Max value Unit 1 A 240 mJ Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID=IAS, VDD= 50 V) Doc ID 12573 Rev 3 3/17 Electrical characteristics 2 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol Test conditions Min. Typ. Max. Unit ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125 °C 1 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 30 V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 3.25 A 0.95 1.05 Ω Table 6. Symbol 4/17 Parameter Drain-source breakdown voltage V(BR)DSS 1. On/off states 800 3 V Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs(1) Forward transconductance VDS =15 V, ID= 3.25 A - 4 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 620 460 15 - pF pF pF Rg Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20 mV Open drain - 7 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=640 V, ID = 6.5 A VGS =10 V (see Figure 19) - 18 4 11 - nC nC nC Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Turn-on delay time Rise time Turn-off delay time Fall time Electrical characteristics Test conditions Min. Typ. Max. Unit VDD = 400 V, ID = 3.25 A, RG=4.7 Ω, VGS=10 V (see Figure 18) - 20 8 35 10 - ns ns ns ns Test conditions Min. Typ. Max. Unit - 6.5 26 A A 1.3 V Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 6.5 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.5 A,VDD= 50 V di/dt=100 A/µs (see Figure 20) - 460 4 17 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.5 A,VDD= 50 V di/dt=100 A/µs, Tj=150 °C (see Figure 20) - 680 6 17 ns µC A Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 12573 Rev 3 5/17 Electrical characteristics STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK, IPAK Figure 7. 6/17 Doc ID 12573 Rev 3 Thermal impedance for DPAK, IPAK STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Figure 8. Output characterisics Figure 10. Transconductance Figure 9. Electrical characteristics Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Doc ID 12573 Rev 3 7/17 Electrical characteristics STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 12573 Rev 3 10% AM01473v1 9/17 Package mechanical data 4 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Doc ID 12573 Rev 3 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/17 Package mechanical data STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 12/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. ty p ma x . A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4. 70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G Doc ID 12573 Rev 3 13/17 Package mechanical data STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J 14/17 Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 MIN. inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 R 40 W 15.7 0.059 0.065 0.073 0.075 0.082 1.574 16.3 0.618 0.641 Doc ID 12573 Rev 3 15/17 Revision history 6 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Revision history Table 9. 16/17 Document revision history Date Revision Changes 22-Sep-2006 1 First release 09-Oct-2007 2 Added new section: Electrical characteristics (curves) 02-Oct-2009 3 Corrected marking and description on first page Doc ID 12573 Rev 3 STD7NM80-1, STD7NM80, STF7NM80, STP7NM80 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 12573 Rev 3 17/17