HCF4016B QUAD BILATERAL SWITCH ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 20V DIGITAL OR ±10V PEAK TO PEAK SWITCHING 280Ω TYPICAL ON RESISTANCE FOR 15V OPERATION SWITCH ON RESISTANCE MATCHED TO WITHIN 10Ω TYP. OVER 15V SIGNAL INPUT RANGE HIGH ON/OFF OUTPUT VOLTAGE RATIO : 65dB TYP. at fIS = 10KHz, RL = 10KΩ HIGH DEGREE OF LINEARITY : < 0.5% DISTORTION TYP. at fIS = 1KHz, VIS = 5 Vpp, VDD - VSS > 10V, RL = 10KΩ EXTREMELY LOW OFF SWITCH LEAKAGE RESULTING IN VERY LOW OFFSET CURRENT AND HIGH EFFECTIVE OFF RESISTANCE : 100pA TYP. at VDD - VSS = 18V, Tamb = 25°C EXTREMELY HIGH CONTROL INPUT IMPEDANCE (control circuit isolated from signal circuit 1012Ω typ.) LOW CROSSTALK BETWEEN SWITCHES : 50dB Typ. at fIS = 0.9MHz, RL = 1KΩ MATCHED CONTROL - INPUT TO SIGNAL OUTPUT CAPACITANCE : REDUCES OUTPUT SIGNAL TRANSIENTS FREQUENCY RESPONSE SWITCH ON : 40MHz (Typ.) QUIESCENT CURRENT SPECIF. UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C DIP SOP ORDER CODES PACKAGE TUBE T&R DIP SOP HCF4016BEY HCF4016BM1 HCF4016M013TR ■ ■ 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4016B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4016B is a QUAD BILATERAL SWITCH intended for the transmission or multiplexing of analog or digital signals. Each of the four independent bilateral switches has a single control signal input which simultaneously biases both the p and n device in a given switch ON or OFF. PIN CONNECTION September 2001 1/9 HCF4016B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 4, 8, 11 A to D I/O 2, 3, 9, 10 A to D O/I Independent Inputs/Outputs Independent Outputs/ Inputs 7 CONTROL A to D VSS Negative Supply Voltage 14 VDD Positive Supply Voltage 13, 5, 6, 12 Enable Inputs TRUTH TABLE CONTROL SWITCH FUNCTION H L ON OFF FUNCTIONAL DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter Supply Voltage VI DC Input Voltage II DC Input Current PD Value Unit -0.5 to +22 V -0.5 to VDD + 0.5 ± 10 mA V 200 100 mW mW Top Power Dissipation per Package Power Dissipation per Output Transistor Operating Temperature -55 to +125 °C Tstg Storage Temperature -65 to +150 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to VSS pin voltage. 2/9 HCF4016B RECOMMENDED OPERATING CONDITIONS Symbol VDD Parameter Value Supply Voltage VI Input Voltage Top Operating Temperature Unit 3 to 20 V 0 to VDD V -55 to 125 °C DC SPECIFICATIONS Test Condition Symbol IL Parameter VC = VDD VSS (V) Quiescent Device Current (all switches ON or all switches OFF) SWITCH RON Resistance Resistance ∆RON (between any 2 of 4 switches) Input or Output Leakage Current Switch OFF (effective off resistance) CI Input Capacitance CO Output Capacitance CIO Feedthrough RL = 10KΩ VDD (V) 5 10 15 20 0.01 0.01 0.01 0.02 0.25 0.5 1 5 7.5 15 30 150 7.5 15 30 150 µA 200 200 280 250 250 580 200 200 300 250 250 560 10 400 400 850 660 660 2000 400 400 800 660 660 2000 600 600 1230 840 840 2380 520 520 1080 840 840 2380 600 600 1230 840 840 2380 520 520 1080 840 840 2380 Ω 15 0 +10 0 +7.5 -7.5 +5 -5 ±5 VDD +15 VC = VSS 0 -7.5 +5 -5 Min. -40 to 85°C -55 to 125°C Unit Max. +15 +7.5 TA = 25°C Typ. +7.5 -7.5 ±0.25 +5 -5 ±0.25 + 15 +0.25 + 9.3 + 10 +0.25 + 5.6 ± 7.5 RL = 10KΩ ∆ON Value 10 -5 Min. Max. Min. Max. Ω ± 0.3 ±1 ±1 µA 4 VCC = VSS = -5 +5 4 pF 0.2 CONTROL (VC) VTH Switch Threshold Voltage IIS = 10 µA 5 10 15 2.25 4.5 6.75 II Input Current VIS < VDD 18 ±10-5 ±0.1 CI Input Capacitance 5 7.5 1 2 2 1 2 2 ±1 V ±1 µA pF 3/9 HCF4016B DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, all input square wave rise and fall time = 20 ns ) Test Condition Parameter VC (V) Propagation Delay Time (signal input to output) = VDD Crosstalk Between VC(A) = VDD any 2 of 4 Switches (f = +5 at -50dB) V = VSS = C(B) 20 log 10 VO(B)/VI(A) -5 = -50dB Feedthrough(switch = VDD OFF) at 20 log 10 VO/VI = =+5 -50dB Frequency Response Switch"ON" (sine = VSS wave input) at =-5 20 log 10 VO/VI=-3dB Sine Wave Distortion fI RL (KΩ) (KHz) VI (V) Value VSS (V) 10 10sq. GND Wave 1 VI(A) ∆ =5p-p 1 5p-p 1 -5p-p 5p-p = VDD = 5 10 VDD - VSS (sq. wave) 1 VDD or VSS 1 VDD 1 VDD (V) 5 10 15 Min. Unit Typ. Max. 40 20 15 100 50 40 ns 0.9 MHz 1.25 MHz -5 40 MHz -5 0.4 % 5 CONTROL (VC) Propagation Delay Time (turn on control to output) Max. Allowable Control Input Repetition 10 (sq. wave) Rate Crosstalk (control 10 (sq. wave) Input to signal output) (∆) Symmetrical about OV 4/9 10 5 10 15 VDD - VSS = 10V 35 20 15 70 40 30 ns GND 10 10 MHz GND 10 50 mV HCF4016B TYPICAL "ON" RESISTANCE CHARACTERISTICS, Tamb = 25°C Load Conditions Supply Conditions RL = 1KΩ Characteristics* RON RON (max.) RON RON (max.) RON RON (max.) RON RON (max.) RL = 10KΩ RL = 100KΩ VDD (V) VSS (V) Value (Ω) Vis (V) Value (Ω) Vis (V) Value (Ω) Vis (V) + 15 0 200 200 + 15 0 200 200 + 15 0 180 200 + 15 0 + 15 0 300 + 11 300 + 9.3 300 + 9.2 + 10 0 290 290 + 10 0 250 250 + 10 0 240 300 + 10 0 + 10 0 500 + 7.4 560 + 5.6 610 + 5.5 +5 0 860 600 +5 0 470 580 +5 0 450 800 +5 0 +5 0 1.7K + 4.2 7K + 2.9 33K + 2.7 + 2.5 - 2.5 590 720 + 2.5 - 2.5 450 520 + 2.5 - 2.5 490 520 + 2.5 - 2.5 + 2.5 - 2.5 232K ± 0.25 300K ± 0.25 870K ± 0.25 * Variation from a perfect switch, RON = 0Ω TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200KΩ RT = ZOUT of pulse generator (typically 50Ω) 5/9 HCF4016B SWITCHING CARACTERISTICS TEST CIRCUIT SQUARE-WAVE RESPONSE PROPAGATION DELAY TIME SIGNAL INPUT (VIS) TO SIGNAL OUTPUT (VOS) MAX ALLOWABLE CONTROL-INPUT REPETITION RATE SWITCH TRESHOLD VOLTAGE CAPACITANCE CIOS AND COS CROSSTALK CONTROL INPUT TO SIGNAL OUTPUT TURN-ON PROPAGATION DELAY-CONTROL INPUT TO OUTPUT 6/9 HCF4016B Plastic DIP-14 MECHANICAL DATA mm. inch DIM. MIN. a1 0.51 B 1.39 TYP MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L Z 3.3 1.27 0.130 2.54 0.050 0.100 P001A 7/9 HCF4016B SO-14 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.68 0.026 8° (max.) PO13G 8/9 HCF4016B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom © http://www.st.com 9/9