STMICROELECTRONICS L6388E

L6388E
High-voltage high and low side driver
Features
■
High voltage rail up to 600V
■
dV/dt immunity ±50V/nsec in full temperature
range
■
Driver current capability:
– 400mA source,
– 650mA sink
Switching times 70/40 nsec rise/fall with 1nF
load
■
3.3V, 5V, 15V CMOS/TTL inputs comparators
with hysteresys and pull down
■
Internal bootstrap diode
■
Outputs in phase with inputs
■
Dead time and interlocking function
The L6388E is an high-voltage device,
manufactured with the BCD"OFF-LINE"
technology.
It has a Driver structure that enables to drive
independent referenced N Channel Power MOS
or IGBT. The High Side(Floating) Section is
enabled to work with voltage Rail up to 600V.
The Logic Inputs are CMOS/TTL compatible for
ease of interfacing with controlling devices.
Block diagram
BOOTSTRAP DRIVER
VCC
3
UV
DETECTION
8
UV
DETECTION
LOGIC
HIN
LIN
SO-8
Description
■
Figure 1.
DIP-8
2
SHOOT
THROUGH
PREVENTION
H.V.
HVG
DRIVER
R
R
LEVEL
SHIFTER
S
HVG
OUT
VCC
LVG
DRIVER
Rev 1
Cboot
7
1
October 2007
Vboot
6
TO LOAD
5
LVG
4
GND
1/18
www.st.com
18
Contents
L6388E
Contents
1
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3
Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1
AC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2
DC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Waveforms definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Input logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6
Bootstrap driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6.1
CBOOT
selection and charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
7
Typical characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
9
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
L6388E
Electrical data
1
Electrical data
1.1
Absolute maximum ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
Vout
Output voltage
-3 to Vboot -18
V
Vcc
Supply voltage
- 0.3 to +18
V
Vboot
Floating supply voltage
-1 to 618
V
Vhvg
High side gate output voltage
-1 to Vboot
V
Vlvg
Low side gate output voltage
-0.3 to Vcc +0.3
V
Logic input voltage
-0.3 to Vcc +0.3
V
Allowed output slew rate
50
V/ns
Total power dissipation (TJ = 85 °C)
750
mW
Tj
Junction temperature
150
°C
Ts
Storage temperature
-50 to 150
°C
Vi
dVout/dt
Ptot
Note:
ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
1.2
Thermal data
Table 2.
Thermal data
Symbol
Rth(JA)
1.3
Parameter
Thermal Resistance Junction to ambient
SO-8
DIP-8
Unit
150
100
°C/W
Recommended operating conditions
Table 3.
Recommended operating conditions
Symbol
Pin
Vout
6
VBS
(2)
8
TJ
3
Test condition
Min
Typ
Max
Unit
Output voltage
(1)
580
V
Floating supply voltage
(1)
17
V
400
kHz
17
V
125
°C
Switching frequency
fsw
Vcc
Parameter
HVG,LVG load CL = 1nF
Supply voltage
Junction temperature
-45
1. If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V
2. VBS = Vboot - Vout
3/18
Pin connection
2
L6388E
Pin connection
Figure 2.
Pin connection (Top view)
LIN
1
8
Vboot
HIN
2
7
HVG
VCC
3
6
OUT
GND
4
5
LVG
D97IN517A
Table 4.
Pin description
N°
Pin
Type
Function
1
LIN
I
Low side driver logic input
2
HIN
I
High side driver logic input
3
Vcc
4
GND
5
LVG (1)
O
Low side driver output
6
VOUT
O
High side driver floating reference
7
HVG (1)
O
High side driver output
8
Vboot
Low voltage power supply
Ground
Bootstrap supply voltage
1. The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA). This allows to omit the "bleeder"
resistor connected between the gate and the source of the external MOSFET normally used to hold the pin
low.
4/18
L6388E
Electrical characteristics
3
Electrical characteristics
3.1
AC operation
Table 5.
Symbol
ton
toff
3.2
AC operation electrical characteristcs (VCC = 15V; TJ = 25°C)
Pin
Parameter
High/low side driver turn-on
1 vs 5 propagation delay
2 vs 7 High/low side driver turn-off
propagation delay
Test condition
Min
Typ
Max
Unit
Vout = 0V
225
300
ns
Vout = 0V
160
220
ns
tr
5, 7
Rise time
CL = 1000pF
70
100
ns
tf
5, 7
Fall time
CL = 1000pF
40
80
ns
DT
5, 7
Dead time
320
420
ns
220
DC operation
Table 6.
Symbol
DC operation electrical characteristcs (VCC = 15V; TJ = 25°C)
Pin
Parameter
Test condition
Min
Typ
Max
Unit
Low supply voltage section
Vccth1
Vcc UV turn on threshold
9.1
9.6
10.1
V
Vccth2
Vcc UV turn off threshold
7.9
8.3
8.8
V
Vcchys
Vcc UV hysteresis
0.9
V
Undervoltage quiescent
supply current
Vcc ≤ 9V
250
330
µA
Iqcc
Quiescent current
Vcc = 15V
350
450
µA
Rdson
Bootstrap driver on
resistance (1)
Vcc ≥ 12.5V
125
Iqccu
3
Ω
Bootstrapped supply voltage section
VBSth1
VBS UV turn on threshold
8.5
9.5
10.5
V
VBSth2
VBS UV turn off threshold
7.2
8.2
9.2
V
VBS UV hysteresis
0.9
VBShys
IQBS
ILK
8
VBS quiescent current
High voltage leakage current
V
HVG ON
250
µA
Vhvg = Vout =
Vboot = 600V
10
µA
5/18
Electrical characteristics
Table 6.
Symbol
L6388E
DC operation electrical characteristcs (continued)(VCC = 15V; TJ = 25°C)
Pin
Parameter
Test condition
Min
Typ
Max
Unit
Source short circuit current
VIN = Vih (tp < 10µs)
300
400
mA
Sink short circuit current
VIN = Vil (tp < 10µs)
500
650
mA
High/low side driver
Iso
5,7
Isi
Logic inputs
Vil
Vih
Low level logic input voltage
1.1
High level logic input voltage
1.8
High level logic input current
VIN = 15V
Iil
Low level logic input current
VIN = 0V
20
-1
1. RDS(on) is tested in the following way:
( V CC – V CBOOT1 ) – ( V CC – V CBOOT2 )
R DSON = -----------------------------------------------------------------------------------------------------I 1 ( V CC ,V CBOOT1 ) – I 2 ( V CC ,V CBOOT2 )
where I1 is pin 8 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2
6/18
V
1, 2
Iih
V
70
µA
µA
L6388E
Waveforms definitions
Figure 3.
Dead time waveforms definitions
LIN
H IN
DT
DT
LVG
DT
Interlocking function
4
Waveforms definitions
HVG
Figure 4.
Propagation delay waveform definitions
7/18
Input logic
5
L6388E
Input logic
Input logic is provided with an interlocking circuitry which avoids the two outputs (LVG, HVG)
to be active at the same time when both the logic input pins (LIN, HIN) are at a high logic
level. In addition, to prevent cross conduction of the external MOSFETs, after each output is
turned-off the other output cannot be turned-on before a certain amount of time (DT)
(see Figure 3).
6
Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode (Figure 5 a). In the L6388E a patented
integrated structure replaces the external diode. It is realized by a high voltage DMOS,
driven synchronously with the low side driver (LVG), with in series a diode, as shown in
Figure 5 b. An internal charge pump (Figure 5 b) provides the DMOS driving voltage. The
diode connected in series to the DMOS has been added to avoid undesirable turn on of it.
6.1
CBOOT selection and charging
To choose the proper CBOOT value the external MOS can be seen as an equivalent
capacitor. This capacitor CEXT is related to the MOS total gate charge:
Q gate
C EXT = -------------V gate
The ratio between the capacitors CEXT and CBOOT is proportional to the cyclical voltage loss.
It has to be:
CBOOT>>>CEXT
e.g.: if Qgate is 30nC and Vgate is 10V, CEXT is 3nF. With CBOOT = 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the CBOOT selection has to take into account also
the leakage losses.
e.g.: HVG steady state consumption is lower than 200µA, so if HVG TON is 5ms, CBOOT has
to supply 1µC to CEXT. This charge on a 1µF capacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advantages: the external fast recovery diode can
be avoided (it usually has great leakage current).
This structure can work only if VOUT is close to GND (or lower) and in the meanwhile the
LVG is on. The charging time (Tcharge ) of the CBOOT is the time in which both conditions are
fulfilled and it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS RDSON (typical value: 125
Ω). At low frequency this drop can be neglected. Anyway increasing the frequency it must be
taken in to account.
8/18
L6388E
Bootstrap driver
The following equation is useful to compute the drop on the bootstrap DMOS:
Q gate
V drop = I ch arg e R dson → V drop = ------------------- R dson
T ch arg e
where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the
bootstrap DMOS, and Tcharge is the charging time of the bootstrap capacitor.
For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the Tcharge is 5µs. In fact:
30nC
V drop = --------------- ⋅ 125Ω ∼ 0.8V
5µs
Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode
can be used.
9/18
Bootstrap driver
Figure 5.
L6388E
Bootstrap driver
DBOOT
VS
VBOOT
H.V.
HVG
CBOOT
VOUT
TO LOAD
LVG
a
VBOOT
VS
H.V.
HVG
CBOOT
VOUT
TO LOAD
LVG
b
10/18
L6388E
Typical characteristic
Figure 6.
Typical rise and fall times vs
load capacitance
time
(nsec)
D99IN1054
250
Figure 7.
Quiescent current vs supply
voltage
Iq
(µA)
104
D99IN1055
200
Tr
103
150
Tf
100
102
50
10
0
0
1
2
3
4
5 C (nF)
For both high and low side buffers @25˚C Tamb
Figure 8.
VBOOT UV turn on threshold
vs temperature
2
0
4
Figure 9.
6
8
10
12
14
16 VS(V)
VCC UV turn off threshold vs
temperature
11
13
@ Vcc = 15V
12
10
10
Typ.
Vccth2(V)
VBSth1(V)
11
9
8
7
9
Typ.
8
7
6
6
5
-45
-25
0
25
50
Tj (˚C)
75
100
-45
125
0
25
50
75
100
125
Figure 11. Output source current vs
temperature
1000
14
@ Vcc = 15V
@ Vcc = 15V
13
800
current (mA)
12
11
10
9
600
Typ.
400
200
8
7
-25
Tj (˚C)
Figure 10. VBOOT UV turn off threshold
vs temperature
VBSth2(V)
7
Typical characteristic
Typ.
0
6
-45
-25
0
25
50
75
100
125
-45
-25
0
25 50
Tj (˚C)
75
100 125
11/18
Typical characteristic
L6388E
Figure 12. VCC UV turn on threshold vs
temperature
Figure 13. Output sink current vs
temperature
13
1000
@ Vcc = 15V
800
11
current (mA)
Vccth1(V)
12
10
9
Typ.
Typ.
400
200
8
0
7
-45
12/18
600
-25
0
25
50
Tj (˚C)
75
100
125
-45
-25
0
25
50
Tj (˚C)
75
100
125
L6388E
8
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
13/18
Package mechanical data
L6388E
Figure 14. DIP-8 mechanical data and package dimensions
mm
inch
DIM.
MIN.
A
TYP.
MIN.
3.32
TYP.
MAX.
0.51
B
1.15
1.65
0.045
0.065
b
0.356
0.55
0.014
0.022
b1
0.204
0.304
0.008
0.012
E
0.020
10.92
7.95
9.75
0.430
0.313
0.384
e
2.54
0.100
e3
7.62
0.300
e4
7.62
0.300
F
6.6
0.260
I
5.08
0.200
L
Z
3.18
OUTLINE AND
MECHANICAL DATA
0.131
a1
D
14/18
MAX.
3.81
1.52
0.125
0.150
0.060
DIP-8
L6388E
Package mechanical data
Figure 15. SO-8 mechanical data and package dimensions
mm
inch
DIM.
MIN.
TYP.
A
MAX.
MIN.
TYP.
1.750
MAX.
0.0689
A1
0.100
0.250 0.0039
A2
1.250
0.0492
b
0.280
0.480 0.0110
0.0189
c
0.170
0.230 0.0067
0.0091
D
(1)
E
(2)
E1
0.0098
4.800
4.900
5.000 0.1890 0.1929 0.1969
5.800
6.000
6.200 0.2283 0.2362 0.2441
3.900
4.000 0.1496 0.1535 0.1575
3.800
e
1.270
0.0500
h
0.250
0.500 0.0098
0.0197
L
0.400
1.270 0.0157
0.0500
L1
k
ccc
1.040
0˚
OUTLINE AND
MECHANICAL DATA
0.0409
8˚
0.100
0˚
8˚
0.0039
Notes: 1. Dimensions D does not include mold flash,
protrusions or gate burrs.
Mold flash, potrusions or gate burrs shall not
exceed 0.15mm in total (both side).
2. Dimension “E1” does not include interlead flash
or protrusions. Interlead flash or protrusions shall
not exceed 0.25mm per side.
SO-8
0016023 D
15/18
Order codes
9
L6388E
Order codes
Table 7.
16/18
Order codes
Part number
Package
Packaging
L6388E
DIP-8
Tube
L6388ED
SO-8
Tube
L6388ED013TR
SO-8
Tape and reel
L6388E
10
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
11-Oct-2007
1
Changes
First release
17/18
L6388E
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
18/18