STD30NF03LT N-channel 30V - 0.017Ω - 30A - DPAK STripFET™ II Power MOSFET General features ■ Type VDSS RDS(on) ID STD30NF03LT 30V < 0.025Ω 30A Low threshold drive 3 1 Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. DPAK Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STD30NF03LTT4 D30NF03LT DPAK Tape & reel February 2007 Rev 3 1/13 www.st.com 13 Contents STD30NF03LT Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STD30NF03LT 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR Parameter Value Unit Drain-source voltage (VGS = 0) 30 V Drain-gate voltage (RGS = 20 kΩ) 30 V ± 20 V VGS Gate- source voltage ID(1) Drain current (continuous) at TC = 25°C 30 A ID Drain current (continuous) at TC = 100°C 21 A Drain current (pulsed) 120 A Total dissipation at TC = 25°C 50 W 0.33 W/°C 4 V/ns 450 mJ -55 to 175 °C IDM (2) Ptot Derating Factor (3) dv/dt EAS (4) Tstg Tj Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Max. operating junction temperature 1. Current limited by package 2. Pulse width limited by safe operating area. 3. ISD ≤30A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. 4. Starting Tj = 25 °C, ID = 15A VDD = 25V Table 2. Thermal data Rthj-case Thermal resistance junction-case max 3.0 °C/W Rthj-amb Thermal resistance junction-ambient max 100 °C/W Maximum lead temperature for soldering purpose 275 °C Max value Unit TJ Table 3. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 40 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 15 V) 2.3 J 3/13 Electrical characteristics 2 STD30NF03LT Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 6V, ID = 15A VGS = 105V, ID = 15A Table 5. Symbol Test conditions Typ. Max. 30 1 Unit V 1 10 µA µA ±100 nA 1.7 2.5 V 0.025 0.017 0.035 0.025 Ω Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 15V, ID = 15A 30 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 750 280 70 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 15V, ID = 15A RG = 4.7Ω VGS = 6V (see Figure 12) 15 30 20 10 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15V, ID = 30A, VGS = 6V, RG = 4.7Ω (see Figure 13) 13 5.5 5 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/13 Min. 18 nC nC nC STD30NF03LT Electrical characteristics Table 6. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 30A, VGS = 0 Reverse recovery time ISD = 30A, di/dt = 100A/µs, Reverse recovery charge VDD = 20V, Tj = 150°C Reverse recovery current (see Figure 14) 35 38 2.5 Max. Unit 30 120 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/13 Electrical characteristics STD30NF03LT 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STD30NF03LT Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 11. Normalized BVDSS vs. temperature 7/13 Test circuit 3 STD30NF03LT Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/13 Figure 17. Switching time waveform STD30NF03LT 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STD30NF03LT Packing mechanical data DPAK MECHANICAL DATA mm. inch DIM. MAX. MIN. A A1 A2 B b4 MIN. 2.2 0.9 0.03 0.64 5.2 TYP 2.4 1.1 0.23 0.9 5.4 0.086 0.035 0.001 0.025 0.204 0.094 0.043 0.009 0.035 0.212 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 0.45 0.48 6 0.6 0.6 6.2 0.017 0.019 0.236 0.023 0.023 0.244 6.6 0.252 5.1 6.4 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.260 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 10/13 STD30NF03LT Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 11/13 Revision history 5 STD30NF03LT Revision history Table 7. 12/13 Revision history Date Revision Changes 15-Feb-2005 1 First release 01-Jul-2006 2 New template, no content change 20-Feb-2007 3 Typo mistake on page 1 STD30NF03LT Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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