STB230NH03L N-channel 30V - 80A - D2PAK STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STB230NH03L 30V < 3mΩ 80A(1) 1. This value is limited by package ■ RDS(on) Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device 3 1 D²PAK Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. Internal schematic diagram Applications ■ Switching applications – Specifically designed and optimized for high efficiency DC/DC converters – OR-ing Order code Part number Marking Package Packaging STB230NH03L B230NH03L D²PAK Tape & reel June 2007 Rev1 1/13 www.st.com 13 Contents STB230NH03L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STB230NH03L 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at TC = 25°C 250 A ID(1) Drain current (continuous) at TC=100°C 178 A ID(2) Drain current (continuous) at TC=25°C 80 A Drain current (pulsed) 1000 A Total dissipation at TC = 25°C 300 W 2 W/°C -55 to 175 °C IDM (3) PTOT(4) Derating factor TJ Operating junction temperature 1. This value is silicon limited 2. This value is limited by package 3. Pulse width limited by safe operating area 4. This value is rated according to Rthj-c Table 2. Symbol Thermal data Parameter Value Unit RthJC Thermal resistance junction-case max 0.5 °C/W RthJA Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit 60 A 1150 mJ Table 3. Symbol IAS EAS(1) Avalanche data Parameter Avalanche current Single pulse avalanche energy 1. Starting Tj=25°C, ID=IAV, VDD=24V 3/13 Electrical characteristics 2 STB230NH03L Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS ID = 1mA, VGS= 0 IDSS VDS = 30V, Zero gate voltage drain current (VGS = 0) VDS = 30V,Tc=125°C IGSS Gate body leakage current (VDS = 0) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance Symbol Ciss Coss Crss Qg Typ. Max. 30 1 VGS= 10V, ID= 40A Unit V 1 10 µA µA ±100 nA 1.5 2.5 V 2.3 3 mΩ Typ. Max. Unit Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =10V, f=1 MHz, VGS=0 VDD=15V, ID = 60A VGS =10V Qgd Total gate charge Gate-source charge Gate-drain charge RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain Qgs Min. VGS = ±20V VGS(th) Table 5. 4/13 Drain-source breakdown voltage Test conditions (see Figure 13) Min. 4700 1600 85 pF pF pF 72 15 11 nC nC nC 5.5 Ω STB230NH03L Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD (1) ISDM (2) VSD(3) trr Qrr IRRM trr Qrr IRRM Switching times Parameter Test conditions Min. VDD=15V, ID=60A, Turn-on delay time Rise time RG=4.7Ω, VGS=10V (see Figure 12) VDD=15V, ID=60A, Turn-off delay time Fall time RG=4.7Ω, VGS=10V (see Figure 12) Typ. Max. Unit 11 322 ns ns 123 102 ns ns Source drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=40A, VGS=0 ISD=120A, di/dt = 100A/µs, VDD=20V, Tj=25°C (see Figure 17) ISD=120A, di/dt = 100A/µs, VDD=20V, Tj=150°C (see Figure 17) Max. Unit 250 1000 A A 1.3 V 42 34.7 1.6 ns nC A 47 41.3 1.8 ns nC A 1. This value is silicon limited 2. Pulse width limited by safe operating area 3. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/13 Electrical characteristics STB230NH03L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Static drain-source on resistance Figure 6. Normalized BVDSS vs temperature 6/13 STB230NH03L Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/13 Test circuit 3 STB230NH03L Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/13 Figure 17. Switching time waveform STB230NH03L 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB230NH03L D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 10.4 0.393 4.88 5.28 0.192 0.208 E1 G 0.368 0.315 8.5 0.334 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 10/13 STB230NH03L 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 11/13 Revision history 6 STB230NH03L Revision history Table 8. 12/13 Revision history Date Revision 08-Jun-2007 1 Changes Initial release. STB230NH03L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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