STMICROELECTRONICS STB200NF03

STP200NF03
STB200NF03 - STB200NF03-1
N-channel 30V - 0.0032Ω - 120A - D2PAK/I2PAK/TO-220
STripFET™ III Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STP200NF03
30V
<0.0037Ω
120A(1)
STB200NF03
30V
<0.0037Ω
120A(1)
STB200NF03-1
30V
<0.0037Ω
120A(1)
3
1
Standard threshold drive
■
100% avalanche tested
2
D2PAK
TO-220
1. Current Limited by Package
■
1
3
3
12
I2PAK
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STB200NF03T4
Marking
B200NF03
STB200NF03-1
B200NF03
STP200NF03
P200NF03
February 2007
Package
Tape & reel
2PAK
Tube
TO-220
Tube
D
I
Rev 4
Packaging
2PAK
1/18
www.st.com
18
Contents
STP200NF03 - STB200NF03 - STB200NF03-1
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Test circuit
5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Packaging mechanical data
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STP200NF03 - STB200NF03 - STB200NF03-1
1
Electrical ratings
Electrical ratings
Table 1.
Symbol
VDS
VDGR
Absolute maximum ratings
Parameter
Value
Unit
Drain-source voltage (VGS = 0)
30
V
Drain-gate voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source voltage
± 20
V
ID(1)
Drain current (continuous) at
TC = 25°C
120
A
ID(1)
Drain current (continuous) at
TC = 100°C
120
A
Drain current (pulsed)
480
A
Total dissipation at TC = 25°C
300
W
IDM(2)
Ptot
Derating factor
2.0
W/°C
dv/dt(3)
Peak diode recovery voltage slope
1.5
V/ns
EAS (4)
Single pulse avalanche energy
1.45
J
-55 to 175
°C
Tstg
Tj
Storage temperature
Max. operating junction
temperature
1. Value limited by package
2. Pulse width limited by safe operating area.
3. ISD ≤120A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
4. Starting Tj = 25 °C, ID = 60A, VDD = 25V
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
0.5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Rthj-pcb
Thermal resistance junction-pcb
TJ
Maximum lead temperature for soldering
see curve 13 and 14
purpose(1)
300
°C
1. for 10 sec. 1.6mm from case
3/18
Electrical characteristics
2
STP200NF03 - STB200NF03 - STB200NF03-1
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS =0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max ratings
VDS = max ratings,
TC = 125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 60A
Table 4.
Symbol
Test conditions
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
4
V
0.0032
0.0036
Ω
Typ.
Max.
Unit
2
Dynamic
Parameter
Test conditions
Min.
gfs (1)
Forward
transconductance
VDS= 15V , ID = 60A
200
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
4950
1750
280
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15V, ID = 60A
RG = 4.7Ω VGS = 10V
(see Figure 19)
30
195
75
60
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 24V, ID = 120A,
VGS = 10V
(see Figure 20)
113
32
41
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
4/18
Min.
140
nC
nC
nC
STP200NF03 - STB200NF03 - STB200NF03-1
Table 5.
Symbol
Source drain diode
Parameter
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
Electrical characteristics
Test conditions
Min.
Typ.
ISD = 120A, VGS = 0
ISD = 120A,
Reverse recovery time
di/dt = 100A/µs,
Reverse recovery charge
VDD = 25V, Tj = 150°C
Reverse recovery current
(see Figure 21)
70
170
5
Max.
Unit
120
480
A
A
1.3
V
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/18
Electrical characteristics
STP200NF03 - STB200NF03 - STB200NF03-1
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/18
STP200NF03 - STB200NF03 - STB200NF03-1
Electrical characteristics
Figure 7.
Gate charge vs. gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs. temperature
Figure 11. Normalized BVDSS vs. temperature
Capacitance variations
Figure 10. Normalized on resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
7/18
Electrical characteristics
STP200NF03 - STB200NF03 - STB200NF03-1
Figure 13. Thermal resistance rthj-a vs. PCB
copper area
Figure 14. Max power dissipation vs. PCB
copper area
Figure 15. Power Derating vs. Tc
Figure 16. Max Id Current vs. Tc
Figure 17. Allowable Iav vs. Time in Avalanche
8/18
STP200NF03 - STB200NF03 - STB200NF03-1
Electrical characteristics
The previous curve gives the safe operating area for unclamped inductive loads, single
pulse or repetitive, under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche
To de rate above 25 oC, at fixed IAV, the following equation must be applied:
IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width
equal to TAV.
9/18
Spice thermal model
3
STP200NF03 - STB200NF03 - STB200NF03-1
Spice thermal model
Table 6.
Spice parameters
Parameter
Node
Value
CTHERM1
5-4
0.011
CTHERM2
4-3
0.0012
CTHERM3
3-2
0.05
CTHERM4
2-1
0.1
RTHERM1
5-4
0.09
RTHERM2
4-3
0.02
RTHERM3
3-2
0.11
RTHERM4
2-1
0.17
Figure 18. Circuit
10/18
STP200NF03 - STB200NF03 - STB200NF03-1
4
Test circuit
Test circuit
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
Figure 22. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
11/18
Package mechanical data
5
STP200NF03 - STB200NF03 - STB200NF03-1
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
12/18
STP200NF03 - STB200NF03 - STB200NF03-1
Package mechanical data
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8
10
E1
0.368
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0º
0.015
4º
3
V2
0.4
1
13/18
Package mechanical data
STP200NF03 - STB200NF03 - STB200NF03-1
TO-262 (I2PAK) MECHANICAL DATA
mm.
inch
DIM.
MIN.
14/18
MAX.
MIN.
A
4.40
TYP
4.60
0.173
TYP.
0.181
MAX.
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
0.410
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L2
1.27
1.40
0.050
0.055
STP200NF03 - STB200NF03 - STB200NF03-1
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
15/18
Packaging mechanical data
6
STP200NF03 - STB200NF03 - STB200NF03-1
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
16/18
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STP200NF03 - STB200NF03 - STB200NF03-1
7
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
09-Sep-2004
2
Complete version
09-Aug-2006
3
New template, no content change
17/18
STP200NF03 - STB200NF03 - STB200NF03-1
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18/18