STB160NF3LL N-channel 30V - 0.0028Ω - 160A - D2PAK STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STB160NF3LL 30V <0.0033Ω 160A(1) 1. Value limited by wire bonding ■ 100% avalanche tested ■ Ultra low on-resistance ■ Logic level device ■ Low threshold drive 3 1 D2PAK Description The STB100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved. Internal schematic diagram Applications ■ Switching application Order codes Part number STB160NF3LL June 2006 Marking Package B160NF3LL D Rev 2 2PAK Packaging Tape & reel 1/13 www.st.com 13 Contents STB160NF3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STB160NF3LL 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR Parameter Value Unit Drain-source voltage (VGS = 0) 30 V Drain-gate voltage (RGS = 20 kΩ) 30 V VGS Gate- source voltage ± 16 V ID(1) Drain current (continuous) at TC = 25°C 160 A ID(1) Drain current (continuous) at TC = 100°C 160 A Drain current (pulsed) 640 A Total dissipation at TC = 25°C 300 W Derating Factor 2 W/°C Peak diode recovery avalanche energy 2 V/ns 1.2 mJ IDM (2) Ptot dv/dt(3) EAS (4) Tstg Tj Single pulse avalanche energy Storage temperature -55 to 175 °C Max. operating junction temperature 1. Current limited by package 2. Pulse width limited by safe operating area. 3. ISD ≤160A, di/dt ≤100A/µs, VDD =V(BR)DSS, Tj ≤TJMAX 4. Starting Tj = 25 °C, ID = 30A, VDD = 15V Table 2. Thermal data Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max TJ Maximum lead temperature for soldering purpose (1) 0.5 °C/W 62.5 °C/W 300 °C 1. for t ≤10sec. 1.6mm from case 3/13 Electrical characteristics 2 STB160NF3LL Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 20V VDS = 20V, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 16V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 80A VGS = 4.5V, ID = 80A Table 4. Symbol Test conditions Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 1 V 0.0028 0.0035 0.0033 0.0048 Ω Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 15V , ID = 80A 110 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 5500 1700 300 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 15V, ID = 80A RG = 4.7Ω VGS = 4.5V (see Figure 13) 50 350 150 130 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 24V, ID = 160A, VGS = 4.5V, RG = 4.7Ω (see Figure 14) 80 30 45 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/13 Min. 110 nC nC nC STB160NF3LL Electrical characteristics Table 5. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 160A, VGS = 0 ISD = 160A, di/dt = Reverse recovery time 100A/µs, Reverse recovery charge VDD = 20V, Tj = 150°C Reverse recovery current (see Figure 15) 100 250 6 Max. Unit 160 640 A A 1.3 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/13 Electrical characteristics STB160NF3LL 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STB160NF3LL Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/13 Test circuit 3 STB160NF3LL Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/13 Figure 18. Switching time waveform STB160NF3LL 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB160NF3LL D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 E1 0.368 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 10/13 STB160NF3LL 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 11/13 Revision history 6 STB160NF3LL Revision history Table 6. 12/13 Revision history Date Revision Changes 21-Jun-2005 1 Preliminary document 19-Jun-2006 2 New template, no content change STB160NF3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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