STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8™ STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS(on) ID STS20NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb ■ Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses ■ Reduced conduction losses ■ Improved junction-case thermal resistance SO-8 Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology and a proprietary process for integrating a monolithic Schottky diode. The new Power MOSFET is optimized for the most demanding synchronous switch function in DC-DC converter for Computer and Telecom. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STS20NHS3LL 20HS3LL- SO-8 Tape & reel January 2007 Rev 5 1/12 www.st.com 12 Contents STS20NHS3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STS20NHS3LL 1 Electrical ratings Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS Gate-source voltage ±16 V ID(1) Drain current (continuous) at TC = 25°C 20 A ID Drain current (continuous) at TC=100°C 12.6 A Drain current (pulsed) 80 A Total dissipation at TC = 25°C 2.7 W -55 to 150 °C IDM (2) PTOT TJ Tstg Operating junction temperature Storage temperature 1. This value is rated accordingly to Rthj-pcb 2. Pulse width limited by safe operating area Table 2. Symbol Rthj-pcb(1) Thermal data Parameter Thermal resistance junction-pcb max Value Unit 47 °C/W Value Unit 1. When mounted on 1 inch² FR-4 board, 2oz Cu. (t<10sec.) Table 3. Symbol Avalanche data Parameter IAV Avalanche current, not repetitive (pulse width limited by Tjmax) 10 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAV, VDD=24V) 1.8 J 3/12 Electrical characteristics 2 STS20NHS3LL Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Typ. Max. Unit Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 24V 500 µA IGSS Gate body leakage current (VDS = 0) VGS = ±16V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 1mA 2.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 10A V(BR)DSS Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd 30 V 1 0.0032 0.0042 0.004 0.0057 VGS= 4.5V, ID= 10A Ω Ω Dynamic Parameter Test conditions Forward transconductance VDS =10V, ID = 15A Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1MHz, VGS=0 Total gate charge Gate-source charge Gate-drain charge VDD= 15V, ID = 20A VGS = 4.5V, (see Figure 13) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/12 Min. Min. Typ. Max. Unit 44 S 4200 700 46.2 pF pF pF 27 8.5 7.2 35 nC nC nC STS20NHS3LL Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15V, ID=10A, RG=4.7Ω, VGS=4.5V (see Figure 12) VDD=15V, ID=10A, RG=4.7Ω, VGS=4.5V (see Figure 12) Parameter Test conditions ISDM(1) VSD(2) Forward on voltage ISD=5A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=20A, di/dt = 100A/µs, VDD=25V, Tj=150°C trr Qrr IRRM Typ. Max. Unit 16 45 ns ns 68 8 ns ns Source drain diode Source-drain current Source-drain current (pulsed) ISD Min. (see Figure 17) Min. Typ. 30 30 2 Max. Unit 20 80 A A 0.75 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12 Electrical characteristics STS20NHS3LL 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs. temperature Figure 6. Static drain-source on resistance 6/12 STS20NHS3LL Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 STS20NHS3LL Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/12 Figure 17. Switching time waveform STS20NHS3LL 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data STS20NHS3LL SO-8 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 c1 45 (typ.) 1.27 e e3 3.81 0.150 3.8 4.0 0.14 L 0.4 1.27 0.015 S 0.244 0.050 F M 10/12 MIN. 0.6 0.157 0.050 0.023 8 (max.) STS20NHS3LL 5 Revision history Revision history Table 8. Revision history Date Revision Changes 24-May-2005 1 Initial release. 19-Dec-2005 2 Inserted curves 05-Jan-2006 3 Modified value on On/off states 18-Jul-2006 4 The document has been reformatted 31-Jan-2007 5 Typo mistake on Table 1. 11/12 STS20NHS3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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