STC04IE170HV Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 W General features Table 1. General features VCS(ON) IC RCS(ON) 0.7V 4A 0.17Ω ■ High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1700 V ■ Very low CISS driven by RG = 47 Ω ■ Very low turn-off cross over time ■ In compliance with the 2002/93/EC European Directive 1 23 4 TO247-4L HV Internal schematic diagrams Description The STC04IE170HV is manufactured in Monolithic ESBT technology, aimed to provide the best performance in High Frequency / High voltage applications. It is designed for use in Gate Driven based topologies. Applications ■ Flyback / forward SMPS ■ Buck-bust converter Order codes Part Number Marking Package Packing STC04IE170HV C04IE170HV TO247-4L HV Tube September 2006 Rev 1 1/11 www.st.com 11 STC04IE170HV Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STC04IE170HV 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 1700 V VCS(SS) Collector-source voltage (V BS =VGS =0V) VBS(OS) Base-source voltage (IC =0, VGS =0V) 30 V VSB(OS) Source-base voltage (IC =0, VGS =0V) 17 V ± 17 V Collector current 4 A Collector peak current (tP < 5ms) 15 A Base current 2 A IBM Base peak current (tP < 1ms) 4 A Ptot Total dissipation at T c ≤ 25°C 178 W Tstg Storage temperature -40 to 150 °C 150 °C Value Unit 0.7 °C/W VGS IC ICM IB TJ Table 3. Symbol Rthj-case Gate-source voltage Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case max 3/11 Electrical characteristics 2 STC04IE170HV Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Symbol Parameter Test Conditions Min. Typ. Max. Unit ICS(SS) Collector-source current VCS(SS) =1700V (VBS =V GS =0V) 100 µA IBS(OS) Base-source current (IC =0, VGS =0V) VBS(OS) =30V 10 µA ISB(OS) Source-base current (IC =0, VGS =0V) VSB(OS) =17V 100 µA IGS(OS) Gate-source leakage (VBS =0V) VGS = ± 17V 100 nA VCS(ON) Collector-source ON voltage 1.5 1.4 V V 1.3 0.9 1.5 1.1 V V 3 4 V VGS =10V IC =4A IB =0.8A VCS =1V VGS =10V IC =4A 4 5.5 VCS =1V V GS =10V IC =1.5A 7 11 DC current gain VBS(ON) Base-source ON voltage VGS =10V IC =4A VGS =10V IC =1.5A IB =0.15A VGS(th) Gate threshold voltage VBS =V GS IB =250µA VCS =25V f =1MHz QGS(tot) ts tf ts tf VCS(dyn) Input capacitance IB =0.8A VGS=0V Gate-source Charge VGS=10V INDUCTIVE LOAD Storage time Fall time VGS =10V RG =47Ω VClamp =1360V tp =4µs INDUCTIVE LOAD Storage time Fall time Collector-source dynamic voltage (500ns) 0.7 0.6 VGS =10V IC =1.5A IB =0.15A hFE Ciss 4/11 Electrical characteristics IC =2A IB =0.4A VGS =10V RG =47Ω VClamp =1360V tp =4µs IC =2A IB =0.2A 2 510 pF 3.9 nC 770 ns 10 ns 410 ns 10 ns 5.36 V VCC =VClamp =400V VGS =10V IC =1.5A IB = 0.3A tpeak =500ns RG =47Ω IBpeak =3A (2IC ) STC04IE170HV Table 4. Symbol VCS(dyn) VCSW Electrical characteristics Electrical characteristics Parameter Collector-source dynamic voltage (1µs) Test Conditions Min. Typ. Max. Unit VCC =VClamp =400V VGS =10V IC = 1.5A IB = 0.3A tpeak =500ns RG =47Ω Maximum collectorsource voltage switched RG =47Ω without snubber 4.32 V IBpeak = 3A (2IC ) hFE =5 IC = 4A 1700 V Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Dynamic collector-source saturation voltage Figure 3. DC current gain Figure 4. Gate threshold voltage vs temperature 5/11 Electrical characteristics 6/11 STC04IE170HV Figure 5. Collector-source On voltage Figure 6. Collector-source On voltage Figure 7. Base-source On voltage Figure 8. Base-source On voltage Figure 9. Inductive load switching time Figure 10. Inductive load switching time STC04IE170HV Electrical characteristics Figure 11. Reverse biased safe operating area 7/11 Package mechanical data 3 STC04IE170HV Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STC04IE170HV Package mechanical data TO247-4L HV MECHANICAL DATA DIM. A A1 A2 MIN. 4.85 2.20 b 0.95 b2 c D D1 E e e1 L L1 L2 L3 øP S 2.50 0.40 23.85 15.45 2.54 5.08 10.20 2.20 mm. TYP 2.50 1.27 1.10 24 21.50 15.60 2.50 18.50 3 3.55 MAX. 5.15 2.60 1.30 2.90 0.80 24.15 15.75 10.80 2.80 3.65 5.50 7734874 9/11 Revision history 4 STC04IE170HV Revision history Table 5. 10/11 Revision history Date Revision 11-Sep-2006 1 Changes First release. STC04IE170HV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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