STMICROELECTRONICS STU7NM60N

STD7NM60N, STF7NM60N
STP7NM60N, STU7NM60N
N-channel 600 V, 5 A, 0.84 Ω, DPAK, TO-220FP, TO-220, IPAK
second generation MDmesh™ Power MOSFET
Features
Order codes
VDSS @
TJmax
STD7NM60N
STF7NM60N
STP7NM60N
STU7NM60N
RDS(on)
max.
ID
3
2
3
1
650 V
< 0.9 Ω
1
TO-220
IPAK
5A
2
3
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
1
3
1
DPAK
2
TO-220FP
Application
Switching applications
Figure 1.
Internal schematic diagram
Description
$
These devices are N-channel Power MOSFETs
realized using the second generation of
MDmeshTM technology. It applies the benefits of
the multiple drain process to STMicroelectronics’
well-known PowerMESH™ horizontal layout
structure. The resulting product offers improved
on-resistance, low gate charge, high dv/dt
capability and excellent avalanche characteristics.
'
3
!-V
Table 1.
Device summary
Order codes
Marking
Package
Packaging
DPAK
Tape and reel
TO-220FP
Tube
STP7NM60N
TO-220
Tube
STU7NM60N
IPAK
Tube
STD7NM60N
STF7NM60N
7NM60N
November 2010
Doc ID 16472 Rev 4
1/17
www.st.com
17
Contents
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
.............................................. 9
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220, IPAK,
DPAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
600
VGS
Gate-source voltage
± 25
V
V
(1)
A
ID
Drain current (continuous) at TC = 25 °C
5
5
ID
Drain current (continuous) at TC = 100 °C
3
3 (1)
A
Drain current (pulsed)
20
20(1)
A
Total dissipation at TC = 25 °C
45
20
W
IDM
(2)
PTOT
dv/dt
(3)
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
15
V/ns
2500
V
- 55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
DPAK IPAK
Rthj-case
Thermal resistance junction-case max
2.78
Rthj-amb
Thermal resistance junction-ambient max
100
Rthj-pcb
Thermal resistance junction-pcb max
Tl
Table 4.
Symbol
TO-220
TO-220FP
6.25
62.5
50
°C/W
°C/W
°C/W
Maximum lead temperature for soldering
purpose
300
°C
Thermal data
Parameter
Value
Unit
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
2
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
119
mJ
Doc ID 16472 Rev 4
3/17
Electrical characteristics
2
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
600
V
IDSS
VDS = Max rating
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
100
nA
3
4
V
0.84
0.9
Ω
Min.
Typ.
Max.
Unit
VGS = ± 20 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Table 6.
Symbol
2
VGS = 10 V, ID = 2.5 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
363
24.6
1.1
-
pF
pF
pF
Output equivalent
capacitance
VDS = 0 to 480 V, VGS = 0
-
130
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
5.4
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 5 A,
VGS = 10 V
(see Figure 18)
-
14
2.7
7.7
-
nC
nC
nC
Ciss
Coss
Crss
Coss eq.(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
4/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 300 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Min.
Typ.
-
7
10
26
12
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Electrical characteristics
Test conditions
Max. Unit
-
5
20
A
A
ISD = 5 A, VGS = 0
-
1.3
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 22)
-
213
1.5
14
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
-
265
1.8
14
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 16472 Rev 4
5/17
Electrical characteristics
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for DPAK, IPAK Figure 3.
Thermal impedance for DPAK, IPAK
AM06474v1
100
is
10
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
10µs
ID
(A)
1
100µs
1ms
Tj=150°C
Tc=25°C
0.1
10ms
Single
pulse
0.01
0.1
Figure 4.
10
1
100
VDS(V)
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 7.
Thermal impedance for TO-220
AM06475v1
100
on
)
10µs
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
ID
(A)
1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
0.1
0.01
0.1
Figure 6.
Single
pulse
10
1
100
VDS(V)
Safe operating area for TO-220
AM06476v1
100
)
S(
on
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
10µs
D
ID
(A)
1
100µs
1ms
Tj=150°C
Tc=25°C
0.1
10ms
Single
pulse
0.01
0.1
6/17
1
10
100
VDS(V)
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Figure 8.
Output characteristics
Electrical characteristics
Figure 9.
Transfer characteristics
AM06477v1
AM06478v1
10
ID (A)
9
VGS=10V
VDS=20V
9
6V
8
8
7
7
6
6
ID
(A)
5
5
4
4
5V
3
3
2
2
1
1
0
0
0
0
20
10
40
VDS(V)
2
4
6
8
10
VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
AM06479v1
VGS
(V)
VDD=480V
ID=5A
12
VDS
(V)
VGS
500
VDS
10
AM06480v1
RDS(on)
(Ohm)
VGS=10V
0.88
0.86
400
8
300
0.84
0.82
6
200
4
0.80
0.78
100
2
0
0
2
6
4
8
10 12
0
14 16 Qg(nC)
Figure 12. Capacitance variations
0.74
0
1
2
3
4
5
ID(A)
Figure 13. Output capacitance stored energy
AM06481v1
C
(pF)
0.76
AM06482v1
Eoss
(µJ)
2.5
1000
Ciss
2.0
1.5
100
Coss
10
1.0
0.5
1
0.1
Crss
1
10
100
VDS(V)
Doc ID 16472 Rev 4
0
0
100
200 300
400 500 600
VDS(V)
7/17
Electrical characteristics
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Figure 14. Normalized gate threshold voltage
vs temperature
AM06483v1
VGS(th)
(norm)
Figure 15. Normalized on resistance vs
temperature
AM06484v1
RDS(on)
(norm)
1.10
ID=2.5A
2.1
ID=250µA
1.9
1.00
1.7
1.5
1.3
0.90
1.1
0.80
0.9
0.70
-50
0.5
-50 -25
0.7
-25
0
25
50
75
100
TJ(°C)
Figure 16. Normalized BVDSS vs temperature
AM06485v1
BVDSS
(norm)
ID=1mA
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25
8/17
0
25
50
75 100
TJ(°C)
Doc ID 16472 Rev 4
0
25
50
75 100
TJ(°C)
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 21. Unclamped inductive waveform
AM01471v1
Figure 22. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 16472 Rev 4
10%
AM01473v1
9/17
Package mechanical data
4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Table 9.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Figure 23. TO-220FP drawing mechanical data
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 16472 Rev 4
11/17
Package mechanical data
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
TO-251 (IPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
0.95
b4
5.20
c
0.45
5.40
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
4.60
H
16.10
L
9.00
(L1)
0.80
9.40
1.20
L2
0.80
V1
10 o
0068771_H
12/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Package mechanical data
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
1
R
V2
0.20
8o
0o
0068772_G
Doc ID 16472 Rev 4
13/17
Package mechanical data
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
TO-220 type A mechanical data
mm
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
4.60
0.88
1.70
0.70
15.75
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
16.40
28.90
3.75
2.65
3.85
2.95
0015988_Rev_S
14/17
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
5
Packaging mechanical data
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
MIN.
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
0.059
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
MAX.
12.1
0.476
1.6
0.059 0.063
D
1.5
D1
1.5
E
1.65
1.85
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
0.059
0.065 0.073
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
Doc ID 16472 Rev 4
15/17
Revision history
6
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Revision history
Table 10.
16/17
Document revision history
Date
Revision
Changes
29-Oct-2009
1
First release.
19-Jul-2010
2
Corrected values in Table 3: Thermal data.
11-Oct-2010
3
Inserted new value in Table 6: Dynamic
04-Nov-2010
4
Changed RDS(on) typical value.
Doc ID 16472 Rev 4
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
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Doc ID 16472 Rev 4
17/17