STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH™ IGBT PRELIMINARY DATA General features Type VCES VCE(sat) (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V ■ Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■ Very soft ultra fast recovery anti parallel diode TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a familyoptimized for high frequency application. Internal schematic diagram Applications ■ High frequency inverters, ups ■ Motor drivers ■ Induction heating Order codes Part number Marking Package Packaging STGW39NC60VD GW39NC60VD TO-247 Tube July 2006 Rev 4 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/13 www.st.com 13 Contents STGW39NC60VD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 9 STGW39NC60VD 1 Electrical ratings Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC(1) Collector current (continuous) at 25°C 70 A IC (1) Collector current (continuous) at 100°C 40 A ICL (2) Collector current (pulsed) 220 A Gate-emitter voltage ± 20 V Diode RMS forward current at Tc=25°C 15 A Total dissipation at TC = 25°C 250 W – 55 to 150 °C 300 °C VGE IF PTOT Tj Tstg TL Operating junction temperature Storage temperature Maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec.) 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp = 480V , Tj = 150°C, RG = 10Ω, VGE= 15V Table 2. Symbol Thermal resistance Parameter Value Unit Rthj-case Thermal resistance junction-case Max 0.5 °C/W Rthj-amb Thermal resistance junction-ambient Max 50 °C/W 3/13 Electrical characteristics 2 STGW39NC60VD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter Test condictions VBR(CES) Collector-emitter breakdown IC = 1mA, VGE = 0 voltage VCE(SAT) Collector-emitter saturation voltage VGE=15V, IC=30A,Tj=25°C Gate threshold voltage VCE= VGE, IC= 250µA ICES Collector-emitter leakage current (VGE = 0) VCE = Max rating,Tc=25°C IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20V , VCE = 0 Forward transconductance VCE = 15V, IC= 30A VGE(th) gfs Table 4. Symbol Cies Coes Cres Qg Qge Qgc 4/13 Static Min. Typ. Max. Unit 600 V 1.8 1.6 VGE=15V, IC=30A,Tj=125°C 3.75 VCE= Max rating, Tc=125°C 2.5 V V 5.75 V 500 10 µA mA ± 100 nA 20 S Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test condictions VCE = 25V, f = 1 MHz, VGE= 0 VCE = 390V, IC = 30A, VGE = 15V, (see Figure 16) Min. Typ. 2900 298 59 126 16 46 Max. Unit pF pF pF nC nC nC STGW39NC60VD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 6. Symbol Switching on/off (inductive load) Parameter Test condictions Turn-on delay time Current rise time Turn-on current slope VCC=390 V, IC= 30A, Turn-on delay time Current rise time Turn-on current slope VCC=390 V, IC= 30A, Off voltage rise time Turn-off delay time Current fall time VCC=390 V, IC= 30A, Off voltage rise time Turn-off delay time Current fall time VCC=390 V, IC= 30A, Min. RG=10Ω, VGE=15V Tj=25°C (see Figure 15) RG=10Ω, VGE=15V Tj=125°C (see Figure 15) RG=10Ω, VGE=15V Tj=25°C (see Figure 15) RG=10Ω, VGE=15V Tj=125°C (see Figure 15) Typ. Max. Unit 33 13 2500 ns ns A/µs 32 14 2280 ns ns A/µs 33 178 65 ns ns ns 68 238 128 ns ns ns Switching energy (inductive load) Parameter Test condictions Min Typ. Max Unit (1) Eon Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390V, IC = 30A RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 17) 333 537 870 µJ µJ µJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390V, IC = 30A RG= 10Ω, VGE= 15V, Tj= 125°C (see Figure 17) 618 1125 1743 µJ µJ µJ 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Table 7. Symbol Collector-emitter diode Parameter Test condictions Typ. Max Unit If = 15A If = 15A, Tj = 125°C 1.6 1.4 2.8 V V 45 56 2.55 ns nC A 100 290 5.8 ns nC A Vf Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current If = 15A, VR = 40 V, Reverse recovery time Reverse recovery charge Reverse recovery current If = 15A, VR = 40V, Qrr Irrm trr Qrr Irrm Tj = 25°C, di/dt =100A/µs (see Figure 18) Tj = 125°C,di/dt =100A/µs (see Figure 18) Min 5/13 Electrical characteristics STGW39NC60VD 2.1 Electrical characteristics (curves) Figure 1. Output characterisics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Collector-emitter on voltage vs collector current Figure 6. Normalized gate threshold vs temperature 6/13 STGW39NC60VD Electrical characteristics Figure 7. Normalized breakdown voltage vs temperature Figure 8. Gate charge vs gate-emitter voltage Figure 9. Capacitance variations Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/13 Electrical characteristics Figure 13. Thermal impedance 8/13 STGW39NC60VD Figure 14. Turn-off SOA STGW39NC60VD 3 Test circuit Test circuit Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit Figure 17. Switching waveforms Figure 18. Diode recovery times waveform 9/13 Package mechanical data 4 STGW39NC60VD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGW39NC60VD Package mechanical data TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 11/13 Revision history 5 STGW39NC60VD Revision history Table 8. 12/13 Document revision history Date Revision Changes 17-Nov-2005 1 First release 05-May-2006 2 Inserted curves 10-Jul-2006 3 Modified value on Absolute maximum ratings 28-Jul-2006 4 Modified value on Dynamic STGW39NC60VD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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