STMICROELECTRONICS STGW39NC60VD_06

STGW39NC60VD
N-channel 40A - 600V - TO-247
Very fast switching PowerMESH™ IGBT
PRELIMINARY DATA
General features
Type
VCES
VCE(sat)
(Max)@ 25°C
IC
@100°C
<2.5V
40A
STGW39NC60VD 600V
■
Low CRES / CIES ratio (no cross conduction
susceptibility)
■
High frequency operation
■
Very soft ultra fast recovery anti parallel diode
TO-247
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “V” identifies a
familyoptimized for high frequency application.
Internal schematic diagram
Applications
■
High frequency inverters, ups
■
Motor drivers
■
Induction heating
Order codes
Part number
Marking
Package
Packaging
STGW39NC60VD
GW39NC60VD
TO-247
Tube
July 2006
Rev 4
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
13
Contents
STGW39NC60VD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
................................................ 9
STGW39NC60VD
1
Electrical ratings
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGS = 0)
600
V
IC(1)
Collector current (continuous) at 25°C
70
A
IC (1)
Collector current (continuous) at 100°C
40
A
ICL (2)
Collector current (pulsed)
220
A
Gate-emitter voltage
± 20
V
Diode RMS forward current at Tc=25°C
15
A
Total dissipation at TC = 25°C
250
W
– 55 to 150
°C
300
°C
VGE
IF
PTOT
Tj
Tstg
TL
Operating junction temperature
Storage temperature
Maximum lead temperature for soldering
purpose (1.6 mm from case, for 10 sec.)
1. Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = ----------------------------------------------------------------------------------------------------C C
R
× V
(T , I )
THJ – C
CESAT ( MAX ) C C
2. Vclamp = 480V , Tj = 150°C, RG = 10Ω, VGE= 15V
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case Max
0.5
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
50
°C/W
3/13
Electrical characteristics
2
STGW39NC60VD
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
Parameter
Test condictions
VBR(CES)
Collector-emitter breakdown
IC = 1mA, VGE = 0
voltage
VCE(SAT)
Collector-emitter saturation
voltage
VGE=15V, IC=30A,Tj=25°C
Gate threshold voltage
VCE= VGE, IC= 250µA
ICES
Collector-emitter leakage
current (VGE = 0)
VCE = Max rating,Tc=25°C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20V , VCE = 0
Forward transconductance
VCE = 15V, IC= 30A
VGE(th)
gfs
Table 4.
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
4/13
Static
Min.
Typ.
Max. Unit
600
V
1.8
1.6
VGE=15V, IC=30A,Tj=125°C
3.75
VCE= Max rating, Tc=125°C
2.5
V
V
5.75
V
500
10
µA
mA
± 100
nA
20
S
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test condictions
VCE = 25V, f = 1 MHz, VGE= 0
VCE = 390V, IC = 30A,
VGE = 15V,
(see Figure 16)
Min.
Typ.
2900
298
59
126
16
46
Max.
Unit
pF
pF
pF
nC
nC
nC
STGW39NC60VD
Electrical characteristics
Table 5.
Symbol
td(on)
tr
(di/dt)onf
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test condictions
Turn-on delay time
Current rise time
Turn-on current slope
VCC=390 V, IC= 30A,
Turn-on delay time
Current rise time
Turn-on current slope
VCC=390 V, IC= 30A,
Off voltage rise time
Turn-off delay time
Current fall time
VCC=390 V, IC= 30A,
Off voltage rise time
Turn-off delay time
Current fall time
VCC=390 V, IC= 30A,
Min.
RG=10Ω, VGE=15V
Tj=25°C (see Figure 15)
RG=10Ω, VGE=15V
Tj=125°C (see Figure 15)
RG=10Ω, VGE=15V
Tj=25°C (see Figure 15)
RG=10Ω, VGE=15V
Tj=125°C (see Figure 15)
Typ.
Max.
Unit
33
13
2500
ns
ns
A/µs
32
14
2280
ns
ns
A/µs
33
178
65
ns
ns
ns
68
238
128
ns
ns
ns
Switching energy (inductive load)
Parameter
Test condictions
Min
Typ.
Max
Unit
(1)
Eon
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
Tj= 25°C (see Figure 17)
333
537
870
µJ
µJ
µJ
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 17)
618
1125
1743
µJ
µJ
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Table 7.
Symbol
Collector-emitter diode
Parameter
Test condictions
Typ.
Max
Unit
If = 15A
If = 15A, Tj = 125°C
1.6
1.4
2.8
V
V
45
56
2.55
ns
nC
A
100
290
5.8
ns
nC
A
Vf
Forward on-voltage
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
If = 15A, VR = 40 V,
Reverse recovery time
Reverse recovery charge
Reverse recovery current
If = 15A, VR = 40V,
Qrr
Irrm
trr
Qrr
Irrm
Tj = 25°C, di/dt =100A/µs
(see Figure 18)
Tj = 125°C,di/dt =100A/µs
(see Figure 18)
Min
5/13
Electrical characteristics
STGW39NC60VD
2.1
Electrical characteristics (curves)
Figure 1.
Output characterisics
Figure 2.
Transfer characteristics
Figure 3.
Transconductance
Figure 4.
Collector-emitter on voltage vs
temperature
Figure 5.
Collector-emitter on voltage vs
collector current
Figure 6.
Normalized gate threshold vs
temperature
6/13
STGW39NC60VD
Electrical characteristics
Figure 7.
Normalized breakdown voltage vs
temperature
Figure 8.
Gate charge vs gate-emitter voltage
Figure 9.
Capacitance variations
Figure 10. Switching losses vs temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
current
7/13
Electrical characteristics
Figure 13. Thermal impedance
8/13
STGW39NC60VD
Figure 14. Turn-off SOA
STGW39NC60VD
3
Test circuit
Test circuit
Figure 15. Test circuit for inductive load
switching
Figure 16. Gate charge test circuit
Figure 17. Switching waveforms
Figure 18. Diode recovery times waveform
9/13
Package mechanical data
4
STGW39NC60VD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STGW39NC60VD
Package mechanical data
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
0.620
0.214
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
5.50
0.216
11/13
Revision history
5
STGW39NC60VD
Revision history
Table 8.
12/13
Document revision history
Date
Revision
Changes
17-Nov-2005
1
First release
05-May-2006
2
Inserted curves
10-Jul-2006
3
Modified value on Absolute maximum ratings
28-Jul-2006
4
Modified value on Dynamic
STGW39NC60VD
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