STGW39NC60VD 40 A - 600 V - very fast IGBT Features ■ Low CRES / CIES ratio (no cross conduction susceptibility) ■ IGBT co-packaged with ultra fast free-wheeling diode 2 Applications ■ High frequency inverters ■ UPS ■ Motor drivers ■ Induction heating 3 1 TO-247 Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STGW39NC60VD GW39NC60VD TO-247 Tube January 2008 Rev 7 1/15 www.st.com 15 Contents STGW39NC60VD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 2.2 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STGW39NC60VD 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC(1) Collector current (continuous) at 25 °C 80 A IC (1) Collector current (continuous) at 100 °C 40 A ICL (2) Turn-off latching current 220 A ICP (3) Pulsed collector current 220 A Gate-emitter voltage ± 20 V Diode RMS forward current at TC = 25 °C 30 A IFSM Surge non repetitive forward current (tp=10 ms sinusoidal) 120 A PTOT Total dissipation at TC = 25 °C 250 W – 55 to 150 °C VGE IF Tj Operating junction temperature 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp = 80%(VCES) , Tj = 150 °C, RG = 10 Ω, VGE= 15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max (IGBT) 0.5 °C/W Rthj-case Thermal resistance junction-case max (diode) 1.5 °C/W Rthj-amb Thermal resistance junction-ambient max 50 °C/W 3/15 Electrical characteristics 2 STGW39NC60VD Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions V(BR)CES Collector-emitter breakdown IC = 1 mA voltage (VGE = 0) VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 30 A,TC=125 °C VGE(th) Gate threshold voltage VCE= VGE, IC=1 mA ICES Collector-emitter cut-off current (VGE = 0) VCE = 600 V IGES gfs (1) Min. Typ Max. Unit 600 VGE = 15 V, IC = 30 A V 1.8 1.7 2.5 V V 5.75 V VCE= 600 V, TC = 125 °C 500 5 µA mA Gate-emitter cut-off current (VCE = 0) VGE = ± 20 V ±100 nA Forward transconductance VCE = 15 V, IC= 30 A 3.75 20 S 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg Qge Qgc 4/15 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE= 0 VCE = 390 V, IC = 30 A, VGE = 15 V (see Figure 19) Min. Typ. Max Unit 2900 298 59 pF pF pF 126 16 46 nC nC nC STGW39NC60VD Table 6. Symbol td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Electrical characteristics Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Test conditions Min. VCC = 390 V, IC = 30 A, RG=10 Ω, VGE = 15 V (see Figure 18) VCC = 390 V, IC = 30 A, RG=10Ω, VGE=15 V TC=125 °C Typ. Max. Unit 33 13 2500 ns ns A/µs 32 14 2280 ns ns A/µs 33 178 65 ns ns ns 68 238 128 ns ns ns (see Figure 18) Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time VCC = 390 V, IC = 30 A, RG=10 Ω, VGE=15 V (see Figure 18) VCC = 390 V, IC = 30 A, RG=10 Ω, VGE=15 V TC=125 °C (see Figure 18) Switching energy (inductive load) Parameter Test conditions Min Typ. Max Unit Eon (1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390V, IC = 30A RG= 10Ω, VGE= 15V, (see Figure 20) 333 537 870 µJ µJ µJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390V, IC = 30A RG= 10Ω, VGE= 15V, TC= 125°C (see Figure 20) 618 1125 1743 µJ µJ µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current 5/15 Electrical characteristics Table 8. Symbol Collector-emitter diode Parameter VF Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Qrr Irrm trr Qrr Irrm 6/15 STGW39NC60VD Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 30 A IF = 30 A, TC = 125 °C IF = 30 A, VR = 50 V, di/dt =100 A/µs (see Figure 21) IF = 30 A, VR = 50 V, TC= 125 °C, di/dt =100 A/µs (see Figure 21) Min Typ. Max Unit 2.4 1.8 V V 45 56 2.55 ns nC A 100 290 5.8 ns nC A STGW39NC60VD Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Collector-emitter on voltage vs collector current Figure 7. Normalized gate threshold vs temperature 7/15 Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature Figure 10. Capacitance variations STGW39NC60VD Figure 9. Gate charge vs gate-emitter voltage Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/15 STGW39NC60VD Electrical characteristics Figure 14. Thermal impedance Figure 15. Turn-off SOA Figure 16. Emitter-collector diode characteristics Figure 17. IC vs. frequency IFM(A) 120 110 Tj=125°C (Maximum values) 100 90 80 Tj=125°C (Typical values) 70 60 Tj=25°C (Maximum values) 50 40 30 20 10 VFM(V) 0 0 2.2 1 2 3 4 5 6 Frequency applications For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) ● The maximum power dissipation is limited by maximum junction to case thermal resistance: Equation 1 PD = ∆T / RTHJ-C considering ∆T = TJ - TC = 125 °C - 75 °C = 50 °C ● The conduction losses are: 9/15 Electrical characteristics STGW39NC60VD Equation 2 PC = IC * VCE(SAT) * δ with 50% of duty cycle, VCESAT typical value @125 °C. ● Power dissipation during ON & OFF commutations is due to the switching frequency: Equation 3 PSW = (EON + EOFF) * freq. ● 10/15 Typical values @ 125 °C for switching losses are used (test conditions: VCE = 390 V, VGE = 15 V, RG = 10 Ω). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3). STGW39NC60VD 3 Test circuit Test circuit Figure 18. Test circuit for inductive load switching Figure 19. Gate charge test circuit Figure 20. Switching waveforms Figure 21. Diode recovery times waveform 11/15 Package mechanical data 4 STGW39NC60VD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 12/15 STGW39NC60VD Package mechanical data TO-247 mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Typ Max . 5.15 5.45 L 14.20 L1 3.70 L2 14.80 4.30 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.50 13/15 Revision history 5 STGW39NC60VD Revision history Table 9. 14/15 Document revision history Date Revision Changes 17-Nov-2005 1 First release 05-May-2006 2 Inserted curves 10-Jul-2006 3 Modified value on Absolute maximum ratings 01-Dec-2006 4 Modified value on Dynamic 16-May-2007 5 New curves updated:Figure 5 and Figure 6 22-Aug-2007 6 Added new Figure 17 and new section 2.2: Frequency applications 31-Jan-2008 7 Modified: Table 8: Collector-emitter diode STGW39NC60VD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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