STMICROELECTRONICS STGW39NC60VD_08

STGW39NC60VD
40 A - 600 V - very fast IGBT
Features
■
Low CRES / CIES ratio (no cross conduction
susceptibility)
■
IGBT co-packaged with ultra fast free-wheeling
diode
2
Applications
■
High frequency inverters
■
UPS
■
Motor drivers
■
Induction heating
3
1
TO-247
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behaviour.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
STGW39NC60VD
GW39NC60VD
TO-247
Tube
January 2008
Rev 7
1/15
www.st.com
15
Contents
STGW39NC60VD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
2.2
Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/15
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STGW39NC60VD
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC(1)
Collector current (continuous) at 25 °C
80
A
IC (1)
Collector current (continuous) at 100 °C
40
A
ICL (2)
Turn-off latching current
220
A
ICP (3)
Pulsed collector current
220
A
Gate-emitter voltage
± 20
V
Diode RMS forward current at TC = 25 °C
30
A
IFSM
Surge non repetitive forward current
(tp=10 ms sinusoidal)
120
A
PTOT
Total dissipation at TC = 25 °C
250
W
– 55 to 150
°C
VGE
IF
Tj
Operating junction temperature
1. Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = ----------------------------------------------------------------------------------------------------C C
R
× V
(T , I )
THJ – C
CESAT ( MAX ) C C
2. Vclamp = 80%(VCES) , Tj = 150 °C, RG = 10 Ω, VGE= 15 V
3. Pulse width limited by max. junction temperature allowed
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max (IGBT)
0.5
°C/W
Rthj-case
Thermal resistance junction-case max (diode)
1.5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
50
°C/W
3/15
Electrical characteristics
2
STGW39NC60VD
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
IC = 1 mA
voltage (VGE = 0)
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 30 A,TC=125 °C
VGE(th)
Gate threshold voltage
VCE= VGE, IC=1 mA
ICES
Collector-emitter cut-off
current (VGE = 0)
VCE = 600 V
IGES
gfs (1)
Min. Typ Max. Unit
600
VGE = 15 V, IC = 30 A
V
1.8
1.7
2.5
V
V
5.75
V
VCE= 600 V, TC = 125 °C
500
5
µA
mA
Gate-emitter cut-off
current (VCE = 0)
VGE = ± 20 V
±100
nA
Forward transconductance
VCE = 15 V, IC= 30 A
3.75
20
S
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
4/15
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
VCE = 25 V, f = 1 MHz, VGE= 0
VCE = 390 V, IC = 30 A,
VGE = 15 V
(see Figure 19)
Min. Typ. Max Unit
2900
298
59
pF
pF
pF
126
16
46
nC
nC
nC
STGW39NC60VD
Table 6.
Symbol
td(on)
tr
(di/dt)onf
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 7.
Symbol
Electrical characteristics
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Test conditions
Min.
VCC = 390 V, IC = 30 A,
RG=10 Ω, VGE = 15 V
(see Figure 18)
VCC = 390 V, IC = 30 A,
RG=10Ω, VGE=15 V
TC=125 °C
Typ.
Max.
Unit
33
13
2500
ns
ns
A/µs
32
14
2280
ns
ns
A/µs
33
178
65
ns
ns
ns
68
238
128
ns
ns
ns
(see Figure 18)
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390 V, IC = 30 A,
RG=10 Ω, VGE=15 V
(see Figure 18)
VCC = 390 V, IC = 30 A,
RG=10 Ω, VGE=15 V
TC=125 °C
(see Figure 18)
Switching energy (inductive load)
Parameter
Test conditions
Min
Typ.
Max
Unit
Eon (1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
(see Figure 20)
333
537
870
µJ
µJ
µJ
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 30A
RG= 10Ω, VGE= 15V,
TC= 125°C
(see Figure 20)
618
1125
1743
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/15
Electrical characteristics
Table 8.
Symbol
Collector-emitter diode
Parameter
VF
Forward on-voltage
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Qrr
Irrm
trr
Qrr
Irrm
6/15
STGW39NC60VD
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
IF = 30 A
IF = 30 A, TC = 125 °C
IF = 30 A, VR = 50 V,
di/dt =100 A/µs
(see Figure 21)
IF = 30 A, VR = 50 V,
TC= 125 °C,
di/dt =100 A/µs
(see Figure 21)
Min
Typ.
Max
Unit
2.4
1.8
V
V
45
56
2.55
ns
nC
A
100
290
5.8
ns
nC
A
STGW39NC60VD
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
Figure 4.
Transconductance
Figure 5.
Collector-emitter on voltage vs
temperature
Figure 6.
Collector-emitter on voltage vs
collector current
Figure 7.
Normalized gate threshold vs
temperature
7/15
Electrical characteristics
Figure 8.
Normalized breakdown voltage vs
temperature
Figure 10. Capacitance variations
STGW39NC60VD
Figure 9.
Gate charge vs gate-emitter voltage
Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current
8/15
STGW39NC60VD
Electrical characteristics
Figure 14. Thermal impedance
Figure 15. Turn-off SOA
Figure 16. Emitter-collector diode
characteristics
Figure 17. IC vs. frequency
IFM(A)
120
110
Tj=125°C
(Maximum values)
100
90
80
Tj=125°C
(Typical values)
70
60
Tj=25°C
(Maximum values)
50
40
30
20
10
VFM(V)
0
0
2.2
1
2
3
4
5
6
Frequency applications
For a fast IGBT suitable for high frequency applications, the typical collector current vs.
maximum operating frequency curve is reported. That frequency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
●
The maximum power dissipation is limited by maximum junction to case thermal
resistance:
Equation 1
PD = ∆T / RTHJ-C
considering ∆T = TJ - TC = 125 °C - 75 °C = 50 °C
●
The conduction losses are:
9/15
Electrical characteristics
STGW39NC60VD
Equation 2
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value @125 °C.
●
Power dissipation during ON & OFF commutations is due to the switching frequency:
Equation 3
PSW = (EON + EOFF) * freq.
●
10/15
Typical values @ 125 °C for switching losses are used (test conditions: VCE = 390 V,
VGE = 15 V, RG = 10 Ω). Furthermore, diode recovery energy is included in the EON
(see note 2), while the tail of the collector current is included in the EOFF measurements
(see note 3).
STGW39NC60VD
3
Test circuit
Test circuit
Figure 18. Test circuit for inductive load
switching
Figure 19. Gate charge test circuit
Figure 20. Switching waveforms
Figure 21. Diode recovery times waveform
11/15
Package mechanical data
4
STGW39NC60VD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
12/15
STGW39NC60VD
Package mechanical data
TO-247 mechanical data
mm.
Dim.
A
Min.
4.85
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
Typ
Max .
5.15
5.45
L
14.20
L1
3.70
L2
14.80
4.30
18.50
øP
3.55
3.65
øR
4.50
5.50
S
5.50
13/15
Revision history
5
STGW39NC60VD
Revision history
Table 9.
14/15
Document revision history
Date
Revision
Changes
17-Nov-2005
1
First release
05-May-2006
2
Inserted curves
10-Jul-2006
3
Modified value on Absolute maximum ratings
01-Dec-2006
4
Modified value on Dynamic
16-May-2007
5
New curves updated:Figure 5 and Figure 6
22-Aug-2007
6
Added new Figure 17 and new section 2.2: Frequency
applications
31-Jan-2008
7
Modified: Table 8: Collector-emitter diode
STGW39NC60VD
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