STMICROELECTRONICS STD1802

STD1802
®
LOW VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
Table 1: GENERAL FEATURES
■
■
■
■
Ordering Code
Marking
Shipment
STD1802T4
D1802
Tape & Reel
VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE
HIGH CURRENT GAIN CHARACTERISTIC
FAST-SWITCHING SPEED
SURFACE-MOUNTING DPAK POWER
PACKAGE IN TAPE & REEL
(Suffix "T4")
APPLICATIONS:
CCFL DRIVERS
■ VOLTAGE REGULATORS
■ RELAY DRIVERS
■ HIGH EFFICIENCY LOW VOLTAGE
SWITCHING APPLICATIONS
3
1
DPAK
( TO-252)
■
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
The device is manufactured in NPN Planar
Technology by using a "Base Island" layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
Table 2: ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CBO
Collector-Base Voltage (I E = 0)
80
V
V CEO
Collector-Emitter Voltage (I B = 0)
60
V
V EBO
Emitter-Base Voltage (I C = 0)
6
V
Collector Current
3
A
Collector Peak Current (t p < 5 ms)
6
A
IC
I CM
IB
Parameter
Base Current
P tot
Total Dissipation at T case = 25 o C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
1
A
15
W
-65 to 150
o
C
150
o
C
Rev. 3
July 2004
1/7
STD1802
Table 3: THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
8.33
C/W
Table 4: ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 40 V
0.1
µA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 4 V
0.1
µA
Collector-Base
Breakdown Voltage
(I E = 0)
I C = 100 µA
80
V
I C = 1 mA
60
V
6
V
V (BR)CBO
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 100 µA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 2 A
IC = 3 A
I B = 100 mA
I B = 150 mA
150
200
300
400
mV
mV
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 2 A
I B = 100 mA
0.9
1.2
V
DC Current Gain
I C = 100 mA
IC = 3 A
V CE = 2 V
V CE = 2 V
Transition frequency
V CE = 10 V
I C = 50 mA
150
MHz
Collector-Base
Capacitance
V CB = 10 V
f = 1 MHz
50
pF
IC = 1 A
I B1 = - I B2 = 0.1 A
V CC = 30 V
50
1.35
120
ns
µs
ns
h FE ∗
fT
C CBO
t ON
ts
tf
RESISTIVE LOAD
Turn- on Time
Storage Time
Fall Time
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
2/7
200
100
400
STD1802
Figure 1: Derating Curve
Figure 2: DC Current Gain
Figure 3: Collector-Emitter Saturation Voltage
Figure 4: Collector-Emitter Saturation Voltage
Figure 5: Base-Emitter Saturation Voltage
Figure 6: Base-Emitter On Voltage
3/7
STD1802
Figure 7: Switching Times Resistive Load
Figure 8: Switching Times Resistive Load
Figure 9: Switching Times Resistive Load
Figure 10: Switching Times Inductive Load
Figure 11: Switching Times Inductive Load
4/7
STD1802
Figure 12: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
Table 5: Revision History
Date
12 July 2004
Revision
1
Description of Changes
Third Revision
5/7
STD1802
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
L4
V2
0.8
0.60
0
o
0.031
1.00
8
o
0.024
0
o
0.039
0o
P032P_B
6/7
STD1802
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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