STD1802 ® LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA Table 1: GENERAL FEATURES ■ ■ ■ ■ Ordering Code Marking Shipment STD1802T4 D1802 Tape & Reel VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING DPAK POWER PACKAGE IN TAPE & REEL (Suffix "T4") APPLICATIONS: CCFL DRIVERS ■ VOLTAGE REGULATORS ■ RELAY DRIVERS ■ HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS 3 1 DPAK ( TO-252) ■ INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 2: ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (I E = 0) 80 V V CEO Collector-Emitter Voltage (I B = 0) 60 V V EBO Emitter-Base Voltage (I C = 0) 6 V Collector Current 3 A Collector Peak Current (t p < 5 ms) 6 A IC I CM IB Parameter Base Current P tot Total Dissipation at T case = 25 o C T stg Storage Temperature Tj Max. Operating Junction Temperature 1 A 15 W -65 to 150 o C 150 o C Rev. 3 July 2004 1/7 STD1802 Table 3: THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 8.33 C/W Table 4: ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off Current (I E = 0) V CB = 40 V 0.1 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 4 V 0.1 µA Collector-Base Breakdown Voltage (I E = 0) I C = 100 µA 80 V I C = 1 mA 60 V 6 V V (BR)CBO V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 2 A IC = 3 A I B = 100 mA I B = 150 mA 150 200 300 400 mV mV V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A I B = 100 mA 0.9 1.2 V DC Current Gain I C = 100 mA IC = 3 A V CE = 2 V V CE = 2 V Transition frequency V CE = 10 V I C = 50 mA 150 MHz Collector-Base Capacitance V CB = 10 V f = 1 MHz 50 pF IC = 1 A I B1 = - I B2 = 0.1 A V CC = 30 V 50 1.35 120 ns µs ns h FE ∗ fT C CBO t ON ts tf RESISTIVE LOAD Turn- on Time Storage Time Fall Time ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/7 200 100 400 STD1802 Figure 1: Derating Curve Figure 2: DC Current Gain Figure 3: Collector-Emitter Saturation Voltage Figure 4: Collector-Emitter Saturation Voltage Figure 5: Base-Emitter Saturation Voltage Figure 6: Base-Emitter On Voltage 3/7 STD1802 Figure 7: Switching Times Resistive Load Figure 8: Switching Times Resistive Load Figure 9: Switching Times Resistive Load Figure 10: Switching Times Inductive Load Figure 11: Switching Times Inductive Load 4/7 STD1802 Figure 12: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor Table 5: Revision History Date 12 July 2004 Revision 1 Description of Changes Third Revision 5/7 STD1802 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 6/7 STD1802 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2004 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America. http://www.st.com 7/7