STP14NF12 STP14NF12FP N-channel 120V - 0.16Ω - 14A - TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STP14NF12 120V <0.18Ω 14A STP14NF12FP 120V <0.18Ω 14A 3 3 ■ Exceptional dv/dt capability ■ Application oriented characterization 1 TO-220 2 1 2 TO-220FP Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STP14NF12 P14NF12 TO-220 Tube STP14NF12FP P14NF12 TO-220FP Tube August 2006 Rev 2 1/14 www.st.com 14 Contents STP14NF12 - STP14NF12FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 9 STP14NF12 - STP14NF12FP 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value TO-220 VDS VDGR VGS Unit TO-220FP Drain-source voltage (VGS = 0) 120 V Drain-gate voltage (RGS = 20 kΩ) 120 V Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 14 8.5 A ID Drain current (continuous) at TC = 100°C 9 6 A Drain current (pulsed) 56 34 A Total dissipation at TC = 25°C 60 25 W Derating Factor 0.4 0.17 W/°C IDM (1) Ptot (2) dv/dt EAS (3) Peak diode recovery voltage slope 9 V/ns Single pulse avalanche energy 60 mJ VISO Insulation withstand voltage (DC) Tstg Storage temperature Tj -- 2500 V -55 to 175 °C Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤14A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX 3. Starting Tj = 25 °C, ID = 14A, VDD = 50V Table 2. Thermal data TO-220 TO-220FP 2.5 6 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C TJ °C/W 3/14 Electrical characteristics 2 STP14NF12 - STP14NF12FP Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max ratings VDS = max ratings, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 7A Table 4. Symbol Test conditions Typ. Max. 120 2 Unit V 1 10 µA µA ±100 nA 3 4 V 0.16 0.18 Ω Typ. Max. Unit Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS = 15V, ID = 7A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance td(on) tr td(off) tf Qg Qgs Qgd Min. 4 S VDS = 25V, f = 1MHz, VGS = 0 460 70 30 pF pF pF Turn-on delay time Rise time Turn-off delay time Fall time VDD = 50V, ID = 7A RG = 4.7Ω VGS = 10V (see Figure 15) 16 25 32 8 ns ns ns ns Total gate charge Gate-source charge Gate-drain charge VDD = 80V, ID = 14A, VGS = 10V (see Figure 16) 15.5 3.7 4.7 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/14 Min. 21 nC nC nC STP14NF12 - STP14NF12FP Table 5. Symbol Electrical characteristics Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 14A, VGS = 0 ISD = 14A, Reverse recovery time di/dt = 100A/µs, Reverse recovery charge VDD = 50V, Tj = 150°C Reverse recovery current (see Figure 17) 92 230 5 Max. Unit 14 56 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/14 Electrical characteristics STP14NF12 - STP14NF12FP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/14 STP14NF12 - STP14NF12FP Electrical characteristics Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/14 Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/14 STP14NF12 - STP14NF12FP Figure 14. Normalized BVDSS vs temperature STP14NF12 - STP14NF12FP 3 Test circuit Test circuit Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/14 Package mechanical data 4 STP14NF12 - STP14NF12FP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 STP14NF12 - STP14NF12FP Package mechanical data TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 11/14 Package mechanical data STP14NF12 - STP14NF12FP TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 12/14 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP14NF12 - STP14NF12FP 5 Revision history Revision history Table 6. Revision history Date Revision Changes 09-Sep-2004 1 Complete version 09-Aug-2006 2 New template, no content change 13/14 STP14NF12 - STP14NF12FP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14