STB40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB40NF10 100V <0.028Ω 50A ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ 100% avalanche tested ■ Application oriented characterization 3 1 D2PAK Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number STB40NF10T4 June 2006 Marking Package B40NF10 D Rev 12 2PAK Packaging Tape & reel 1/13 www.st.com 13 Contents STB40NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STB40NF10 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Drain-source voltage (VGS = 0) 100 V Drain-gate voltage (RGS = 20 kΩ) 100 V VGS Gate- source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25°C 50 A ID Drain current (continuous) at TC = 100°C 35 A Drain current (pulsed) 200 A Total dissipation at TC = 25°C 150 W Derating Factor 1 W/°C Peak diode recovery avalanche energy 20 V/ns Single pulse avalanche energy 150 mJ -50 to 175 °C VDS VDGR IDM (2) Ptot dv/dt(3) EAS (4) Tstg Tj Parameter Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. Pulse width limited by safe operating area. 3. ISD ≤50A, di/dt ≤600A/µs, VDD =V(BR)DSS, Tj ≤TJMAX 4. Starting Tj = 25 °C, ID = 50A, VDD = 25V Table 2. Thermal data Rthj-case Thermal resistance junction-case max Rthj-amb TJ 1 °C/W Thermal resistance junction-ambient max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C 3/13 Electrical characteristics 2 STB40NF10 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 25A Table 4. Symbol Test conditions Typ. Max. 100 2 Unit V 1 10 µA µA ±100 nA 2.8 4 V 0.024 0.028 Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 25V, ID = 25A 20 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 1780 265 112 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 50V, ID = 25A RG = 4.7Ω VGS = 10V (see Figure 13) 28 63 84 28 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 80V, ID = 50A, VGS = 10V, RG = 4.7Ω (see Figure 14) 60.6 9.6 22.8 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/13 Min. 80 nC nC nC STB40NF10 Electrical characteristics Table 5. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 50A, VGS = 0 Reverse recovery time ISD = 50A, di/dt = 100A/µs, Reverse recovery charge VDD = 25V, Tj = 150°C Reverse recovery current (see Figure 15) 114 456 8 Max. Unit 50 200 A A 1.3 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/13 Electrical characteristics STB40NF10 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STB40NF10 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized breakdown voltage vs temperature 7/13 Test circuit 3 STB40NF10 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/13 Figure 18. Switching time waveform STB40NF10 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB40NF10 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MAX. MIN. A MIN. 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 E1 G 0.368 0.315 10.4 0.393 8.5 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 10/13 STB40NF10 5 Packing mechanical data Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 11/13 Revision history 6 STB40NF10 Revision history Table 6. 12/13 Revision history Date Revision Changes 21-Jun-2004 10 Preliminary version 15-Dec-2004 11 Complete version 26-Jun-2006 12 New template, no content change STB40NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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