STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II™ Power MOSFET General features Type VDSS RDS(on) ID STP60NF06 60V <0.016Ω 60A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220 Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. Internal schematic diagram Applications ■ Switching application Order code Part number Marking Package Packaging STP60NF06 P60NF06 TO-220 Tube March 2007 Rev 6 1/12 www.st.com 12 Contents STP60NF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STP60NF06 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VGS Gate- source voltage ±20 V ID Drain current (continuos) at TC = 25°C 60 A ID Drain current (continuos) at TC = 100°C 42 A Drain current (pulsed) 240 A Total dissipation at TC = 25°C 110 W Derating factor 0.74 W/°C Peak diode recovery voltage slope 7.5 V/ns – 55 to 175 °C Value Unit Thermal resistance junction-case max 1.36 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit IDM (1) PTOT dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤60A, di/dt ≤400 A/µs, VDD ≤48V, Tj ≤Tjmax Table 2. Symbol Rthj-case Table 3. Symbol Thermal data Parameter Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 30 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=30V) 370 mJ 3/12 Electrical characteristics 2 STP60NF06 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 250 µA, VGS = 0 60 Unit V µA VDS=Max rating, TC=125°C 10 µA ±100 nA 4 V 0.014 0.016 Ω Typ. Max. Unit IGSS Gate-body leakage current (VDS = 0) VGS = ±20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 30A gfs (1) Max. 1 Zero gate voltage Drain current (VGS = 0) Symbol Typ. VDS = Max rating IDSS Table 5. Min. 2 Dynamic Parameter Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. VDS = 15V, ID=30A VDS = 25V, f = 1 MHz, VGS = 0 50 S 1660 pF 400 pF 140 pF 54 VDD = 30V, ID = 60A, VGS = 10V (see Figure 12) 73 nC 9 nC 23 nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 6. Symbol 4/12 Switching times Parameter Test conditions Min. Typ. td(on) tr Turn-on delay time Rise time VDD = 30V, ID = 30A RG = 4.7Ω VGS = 10V (see Figure 11) 15 65 td(off) tf Turn-off-delay time Fall time VDD = 30V, ID = 30A, RG = 4.7Ω, VGS =10V (see Figure 11) 45 20 Max. Unit ns ns ns ns STP60NF06 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Test conditions Min Typ. Max Unit Source-drain current 60 A ISDM (1) Source-drain current (pulsed) 240 A VSD (2) Forward on voltage ISD = 60A, VGS = 0 1.3 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 60A, VDD=30V di/dt = 100A/µs, Tj = 150°C (see Figure 13) trr Qrr IRRM 70 185 5 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STP60NF06 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Source-drain diode forward characteristics Figure 6. Static drain-source on resistance 6/12 STP60NF06 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 Test circuit 3 STP60NF06 Test circuit Figure 11. Switching times test circuit for resistive load Figure 12. Gate charge test circuit Figure 13. Test circuit for inductive load Figure 14. Unclamped Inductive load test switching and diode recovery times circuit Figure 15. Unclamped inductive waveform 8/12 Figure 16. Switching time waveform STP60NF06 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STP60NF06 TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 θP Q 10/12 Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STP60NF06 5 Revision history Revision history Table 8. Revision history Date Revision Changes 09-Sep-2004 3 Complete version 17-Aug-2006 4 The document has been reformatted 04-Oct-2006 5 Changes in Dynamic 02-Mar-2007 6 Safe operating area has been updated 11/12 STP60NF06 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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