STMICROELECTRONICS STP185N55F3

STB185N55F3
STP185N55F3
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220
STripFET™ Power MOSFET
Features
Type
VDSS
STB185N55F3
STP185N55F3
RDS(on)
55V
55V
3.5mΩ
3.8mΩ
ID
Pw
(1)
330W
(1)
330W
120A
120A
1. Value limited by wire bonding
■
Ultra low on-resistance
■
100% avalanche tested
3
1
TO-220
2
3
1
D2PAK
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “single feature size™”
strip-based process with less critical alignment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Figure 1.
Internal schematic diagram
Applications
■
Switching applications
– Automotive
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB185N55F3
185N55F3
D2PAK
Tape & reel
STP185N55F3
185N55F3
TO-220
Tube
June 2007
Rev 2
1/14
www.st.com
14
Contents
STB185N55F3 - STP185N55F3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
................................................ 8
STB185N55F3 - STP185N55F3
1
Electrical ratings
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
55
V
VDS
Drain-source voltage (VGS=0)
VGS
Gate-source voltage
± 20
V
ID (1)
Drain current (continuous) at TC = 25°C
120
A
ID (1)
Drain current (continuous) at TC=100°C
120
A
IDM (2)
Drain current (pulsed)
480
A
PTOT
Total dissipation at TC = 25°C
330
W
Derating factor
2.2
W/°C
dv/dt (3)
Peak diode recovery voltage slope
10
V/ns
EAS (4)
Single pulse avalanche energy
1000
mJ
Tj
Operating junction temperature
storage temperature
-55 To 175
°C
Tstg
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. ISD < 120A, di/dt < 900A/µs, VDD < V(BR)DSS, TJ < TJMAX
4. Starting Tj=25°C, Id=60A, Vdd=40V (see Figure 16 and Figure 17)
Table 2.
Thermal data
TO-220
Rthj-case
Thermal resistance junction-case
D²PAK
0.45
Unit
°C/W
Rthj-a
Thermal resistance junction-ambient
max
62.5
--
°C/W
Rthj-pcb(1)
Thermal resistance junction-ambient
max
--
50
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C
1. When mounted on 1 inch² FR4 2oz Cu.
3/14
Electrical characteristics
2
STB185N55F3 - STP185N55F3
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
On/off states
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS= max rating,
VDS= max rating,@125°C
IGSS
Gate body leakage current
VGS = ±20V
(VDS = 0)
V(BR)DSS
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 60A
D²PAK
TO-220
Table 4.
Symbol
Typ.
Max.
55
Unit
V
10
100
µA
µA
±200
nA
4
V
2.9
3.2
3.5
3.8
mΩ
mΩ
Typ.
Max.
Unit
2
Dynamic
Parameter
Test conditions
Min.
gfs (1)
Forward
transconductance
VDS = 15V , ID = 60A
150
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
6800
1450
15
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 27.5V, ID = 60A
RG = 4.7Ω VGS = 10V
(see Figure 13,
Figure 18)
25
150
110
50
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 44V, ID = 120A,
VGS = 10V,
(see Figure 14)
100
30
26
nC
nC
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
4/14
Min.
STB185N55F3 - STP185N55F3
Table 5.
Symbol
Electrical characteristics
Source drain diode
Parameter
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD(2)
Forward on voltage
ISD
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
Min.
Typ.
ISD=120A, VGS=0
ISD=120A,
di/dt = 100A/µs,
VDD=35V, Tj=150°C
(see Figure 15)
60
0.11
3.5
Max.
Unit
120
480
A
A
1.5
V
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/14
Electrical characteristics
STB185N55F3 - STP185N55F3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Normalized BVDSS vs temperature
Figure 7.
Static drain-source on resistance
6/14
STB185N55F3 - STP185N55F3
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Figure 10. Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
7/14
Test circuit
3
STB185N55F3 - STP185N55F3
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
Figure 16. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 17. Unclamped inductive waveform
8/14
Figure 18. Switching time waveform
STB185N55F3 - STP185N55F3
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/14
Package mechanical data
STB185N55F3 - STP185N55F3
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8
10
E1
0.368
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0º
0.015
4º
3
V2
0.4
1
10/14
STB185N55F3 - STP185N55F3
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.49
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
11/14
Packaging mechanical data
5
STB185N55F3 - STP185N55F3
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
12/14
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB185N55F3 - STP185N55F3
6
Revision history
Revision history
Table 6.
Revision history
Date
Revision
Changes
31-Jan-2007
1
First version
28-Jun-2007
2
Complete version
13/14
STB185N55F3 - STP185N55F3
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