STTH120R04TV Ultrafast recovery diode Main product characteristics IF(AV) 2 x 60 A VRRM 400 V Tj 150° C VF (typ) 0.95 V trr (typ) 31 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 Features and benefits ■ Ultrafast ■ Very low switching losses ■ High frequency and high pulsed current operation ■ Low leakage current ■ Insulated package: – ISOTOP Electrical insulation = 2500 VRMS Capacitance = 45 pF K2 K1 A2 K1 K2 ISOTOP STTH120R04TV1 A2 ISOTOP STTH120R04TV2 www.DataSheet4U.com Order codes Description The STTH120R04TV series uses ST's new 400 V planar Pt doping technology. The STTH120R04 is specially suited for switching mode base drive and transistor circuits, such as welding equipment. March 2007 A1 Rev 1 Part Number Marking STTH120R04TV1 STTH120R04TV1 STTH120R04TV2 STTH120R04TV2 1/7 www.st.com 7 Characteristics STTH120R04TV 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V VRSM Non repetitive peak reverse voltage 400 V 140 A IF(RMS) RMS forward current Per diode Per diode Tc = 75° C 60 A Per package Tc = 70° C 120 A 1800 A 700 A -65 to + 150 °C 150 °C IF(AV) Average forward current, δ = 0.5 IFRM Repetitive peak forward current IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Storage temperature range Tj Table 2. tp = 5 µs, F = 1 kHz square Maximum operating junction temperature Thermal parameters Symbol Parameter Value Rth(j-c) Junction to case Rth(c) Coupling thermal resistance Per diode 0.8 Total 0.45 Unit ° C/W 0.1 www.DataSheet4U.com When the diodes are used simultaneously: ΔTj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Min. Typ Forward voltage drop Tj = 100° C µA 60 600 1.5 IF = 60 A Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.005 x IF2(RMS) 2/7 Unit 60 VR = VRRM Tj = 25° C VF(2) Max. 1.05 1.3 0.95 1.2 V STTH120R04TV Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Max. Unit 80 IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C 40 55 IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C 31 45 Reverse recovery current IF = 60 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C 11 16 S Softness factor IF = 60 A, dIF/dt = -200 A/µs, VR = 320 V, Tj = 125° C 0.4 tfr Forward recovery time dIF/dt = 100 A/µs IF = 60 A VFR = 1.5 x VFmax, Tj = 25° C 600 ns Forward recovery voltage IF = 60 A, dIF/dt = 100 A/µs, Tj = 25° C 3.2 V trr Reverse recovery time IRM VFP Figure 1. Conduction losses versus average current Figure 2. P(W) δ=0.5 A Forward voltage drop versus forward current IFM(A) 200 100 ns δ=1 180 δ=0.2 80 TJ=150°C (Maximum values) 160 δ=0.1 140 δ=0.05 www.DataSheet4U.com 120 60 TJ=150°C (Typical values) 100 40 80 60 T 20 TJ=25°C (Maximum values) 40 δ=tp/T IF(AV)(A) 20 tp 0 VFM(V) 0 0 10 Figure 3. 20 30 40 50 60 70 80 Relative variation of thermal impedance junction to case versus pulse duration 0.0 0.2 Figure 4. Zth(j-c)/Rth(j-c) 1.0 25.0 Single pulse ISOTOP 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) IF= 60A VR=320V 22.5 20.0 17.5 15.0 12.5 Tj=125 °C 10.0 7.5 5.0 0.1 1.E-03 Tj=25 °C 2.5 tp(s) dIF/dt(A/µs) 0.0 1.E-02 1.E-01 1.E+00 1.E+01 10 100 1000 3/7 Characteristics Figure 5. STTH120R04TV Reverse recovery time versus dIF/dt (typical values) Figure 6. tRR(ns) 160 QRR(nC) 800 IF= 60A VR=320V 140 Reverse recovery charges versus dIF/dt (typical values) IF= 60 A VR=320V 700 600 120 500 100 Tj=125 °C Tj=125 °C 400 80 300 60 Tj=25 °C 40 200 20 100 Tj=25 °C dIF/dt(A/µs) dIF/dt(A/µs) 0 0 10 100 Figure 7. 1.4 Relative variations of dynamic parameters versus junction temperature 100 Figure 8. 1000 Transient peak forward voltage versus dIF/dt (typical values) VFp(V) QRR [Tj]/QRR [Tj = 125° C] and IRM [Tj]/IRM [Tj = 125° C] 12 IF=60A VR=320V 1.2 10 1000 IF= 60A Tj=125°C 11 10 9 1.0 8 IRM 0.8 7 6 0.6 5 QRR 4 0.4 3 2 www.DataSheet4U.com 0.2 1 T j(°C) dIF/dt(A/µs) 0 0.0 25 50 Figure 9. 4000 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 Forward recovery time versus dIF/dt Figure 10. Junction capacitance versus (typical values) reverse voltage applied (typical values) C(pF) tFR(ns) 1000 IF=60A VFR=1.5 x V F max. Tj=125°C 3500 F=1MHz VOSC=30mVRMS Tj=25°C 3000 2500 2000 1500 1000 dIF/dt(A/µs) 500 VR(V) 100 0 0 4/7 100 200 300 400 500 1 10 100 1000 STTH120R04TV 2 Package information Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 5. ISOTOP dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E G2 A C A1 C2 E2 F1 F P1 D G S D1 www.DataSheet4U.com E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 B ØP G1 E1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information 3 4 STTH120R04TV Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH120R04TV1 STTH120R04TV1 ISOTOP 27 g 10 Tube STTH120R04TV2 STTH120R04TV2 ISOTOP 27 g 10 Tube Revision history Date Revision 31-Mar-2007 1 Description of Changes First issue www.DataSheet4U.com 6/7 STTH120R04TV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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