STTH120L04TV1 Ultrafast high voltage rectifier Mian product characteristics IF(AV) 2 x 60 A VRRM 400 V Tj (max) 150° C VF (typ) 0.83 V trr (max) 50 ns A1 K1 A2 K2 K1 A1 K2 Features and benefits A2 ● Ultrafast switching ● Low reverse current ● Low thermal resistance ● Reduces switching and conduction losses ● Package insulation voltage: 2500 VRMS ISOTOP STTH120L04TV1 Description Order codes The STTH120L04TV1 uses ST 400 V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. Table 1. Part number Marking STTH120L04TV1 STTH120L04TV1 Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) RMS forward current 120 A 60 A 600 A -55 to + 150 °C 150 °C IF(AV) Average forward current Tc = 115° C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Maximum operating junction temperature August 2006 Rev 1 Per diode 1/7 www.st.com 7 Characteristics 1 STTH120L04TV1 Characteristics Table 2. Thermal resistance Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Value (max). Per diode 0.74 Total 0.42 Unit °C/W 0.1 When diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 3. Symbol Static electrical characteristics (per diode) Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25° C Tj = 125° C Tj = 25° C Tj = 150° C Min. Typ Max. Unit 50 VR = VRRM µA 50 500 1.2 IF = 60 A V 0.83 1.0 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.0033 IF2(RMS) Table 4. Symbol trr Parameter Reverse recovery time Test conditions Tj = 25° C 66 IF = 1 A dIF/dt = 200 A/µs VR = 30 V 36 Tj = 125° C VR = 200 V IF = 60 A dIF/dt = 100 A/µs Softness factor Tj = 125° C VR = 200 V IF = 60 A dIF/dt = 100 A/µs tfr Forward recovery time Tj = 25° C IF = 60 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax VFP Forward recovery voltage Tj = 25° C IF = 60 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax Sfactor Min Typ Max Unit IF = 1 A dIF/dt = 50 A/µs VR = 30 V Reverse recovery current IRM 2/7 Dynamic characteristics (per diode) 90 ns 50 15 A 600 ns 0.4 2.6 V STTH120L04TV1 Figure 1. Characteristics Conduction losses versus Figure 2. average forward current (per diode) I FM (A) P (W) 200 80 d=0.2 d=0.1 d=0.5 d=1 180 d=0.05 70 Forward voltage drop versus forward current (per diode) TJ=150°C (Maximum values) 160 60 140 50 120 40 100 TJ=150°C (Typical values) 80 30 60 20 T 10 40 I F(AV) (A) 0 TJ=25°C (Maximum values) V FM (V) 20 0 0 10 Figure 3. 20 30 40 50 60 70 80 0.0 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration Z th(j-c)/R th(j-c) 1.0 Single pulse 35 0.7 0.6 0.8 1.0 1.2 1.4 1.6 Peak reverse recovery current versus dIF/dt (typical values, per diode) IF=IF(AV) VR=200V TJ=125°C 40 0.8 0.4 I RM (A) 45 0.9 0.2 30 0.6 25 0.5 20 0.4 15 0.3 10 0.2 5 0.1 t P (s) 0.0 1.E-03 1.E-02 Figure 5. dIF /dt(A/µs) 0 1.E-01 1.E+00 1.E+01 Reverse recovery time versus dIF/dt (typical values, per diode) 0 50 Figure 6. trr (ns) IF=IF(AV) VR=200V TJ=125°C 225 200 200 250 300 350 400 450 500 Reverse recovery charges versus dIF/dt (typical values, per diode) IF=IF(AV) VR=200V TJ=125°C 2500 175 150 Qrr (nC) 3000 250 100 2000 150 1500 125 100 1000 75 50 500 25 dI F /dt(A/µs) 0 0 50 100 150 200 250 300 dIF /dt(A/µs) 0 350 400 450 500 0 100 200 300 400 500 3/7 Characteristics Figure 7. STTH120L04TV1 Reverse recovery softness factor versus dIF/dt (typical values, per diode) SFACTOR Figure 8. Relative variations of dynamic parameters versus junction temperature 1.6 0.8 IF < 2 x IF(AV) VR=200V Tj=125°C 0.7 SFACTOR 1.4 1.2 0.6 1.0 0.5 0.8 0.4 IRM & tRR 0.6 0.3 QRR 0.4 0.2 IF=IF(AV) VR=200V Reference: Tj=125°C 0.2 0.1 dIF /dt(A/µs) 0.0 0.0 25 0 50 Figure 9. 100 150 200 250 300 350 400 450 Transient peak forward voltage versus dIF/dt (typical values, per diode) 75 100 125 Figure 10. Forward recovery time versus dIF/dt (typical values, per diode) t fr (ns) 1000 IF=IF(AV) Tj=125°C 7 50 500 VFp ( V ) 8 Tj (°C) IF=IF(AV) VFR=1.1 x V F max. Tj=125°C 900 800 6 700 5 600 4 500 3 400 300 2 200 1 100 dI F /dt(A/µs) 0 0 50 100 150 200 250 300 400 450 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C VR (V) 100 1 4/7 10 dI F /dt(A/µs) 0 350 100 1000 0 50 100 150 200 250 300 350 400 450 500 STTH120L04TV1 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) Table 5. ISOTOP Dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E G2 A C A1 C2 E2 F1 F P1 D G S D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 B ØP G1 E1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information 3 STTH120L04TV1 Ordering information Ordering type Marking Package STTH120L04TV1 STTH120L04TV1 ISOTOP 4 6/7 Weight Base qty 27 g 10 (without screws) (with screws) Revision history Date Revision 11-Aug-2006 1 Description of Changes First issue Delivery mode Tube STTH120L04TV1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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