STTH200L04TV1 Ultrafast high voltage rectifier Mian product characteristics IF(AV) up to 2 x 120 A VRRM 400 V Tj (max) 150° C VF (typ) 0.83 V trr (max) 50 ns A1 K1 A2 K2 K1 A1 K2 Features and benefits A2 ● Ultrafast switching ● Low reverse current ● Low thermal resistance ● Reduces switching and conduction losses ● Package insulation voltage: 2500 VRMS ISOTOP STTH200L04TV1 Description Order codes The STTH200L04TV1 uses ST 400 V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. Table 1. Part number Marking STTH200L04TV1 STTH200L04TV1 Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) RMS forward current 200 A IF(AV) Average forward current IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Tc = 90° C δ = 0.5 Per diode 100 Tc = 73° C δ = 0.5 Per diode 120 tp = 10 ms sinusoidal Maximum operating junction temperature August 2006 Rev 1 A 900 A -55 to + 150 °C 150 °C 1/7 www.st.com 7 Characteristics 1 STTH200L04TV1 Characteristics Table 2. Thermal resistance Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Value (max). Per diode 0.50 Total 0.30 Unit °C/W 0.10 When diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 3. Symbol Static electrical characteristics (per diode) Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25° C Tj = 125° C Tj = 25° C Tj = 150° C Min. Typ Max. Unit 100 VR = VRRM µA 100 1000 1.2 IF = 100 A V 0.83 1.0 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.0033 IF2(RMS) Table 4. Symbol trr Parameter Reverse recovery time Test conditions Tj = 25° C 75 IF = 1 A dIF/dt = 200 A/µs VR = 30 V 45 Tj = 125° C VR = 200 V IF = 100 A dIF/dt = 100 A/µs Softness factor Tj = 125° C VR = 200 V IF = 100 A dIF/dt = 100 A/µs tfr Forward recovery time Tj = 25° C IF = 100 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax VFP Forward recovery voltage Tj = 25° C IF = 100 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax Sfactor Min Typ Max Unit IF = 1 A dIF/dt = 50 A/µs VR = 30 V Reverse recovery current IRM 2/7 Dynamic characteristics (per diode) 100 ns 60 18 A 800 ns 0.4 2.6 V STTH200L04TV1 Figure 1. Characteristics Conduction losses versus Figure 2. average forward current (per diode) P(W) I FM (A) 200 180 δ=1 δ=0.5 160 180 δ=0.2 140 160 δ=0.1 Tj=150°C (Maximum values) 140 δ=0.05 120 Forward voltage drop versus forward current (per diode) 120 100 100 Tj=150°C (Typical values) 80 80 60 60 T 40 40 20 δ=tp/T I F(AV) (A) 0 0 10 20 Figure 3. 30 40 50 60 70 80 20 tp 0 90 100 110 120 130 140 150 0.0 0.2 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration Zth(j-c) /Rth( j-c) 50 1.0 Single pulse 0.9 0.8 40 0.7 35 0.6 30 0.5 25 0.4 20 0.3 15 0.2 10 1.E-02 Figure 5. 1.E+00 1.E+01 Reverse recovery time versus dIF/dt (typical values, per diode) 0.8 1.0 1.2 1.4 IF=IF(AV) VR=200V Tj=125°C dIF/dt(A/µs) 0 1.E-01 0.6 Peak reverse recovery current versus dIF/dt (typical values, per diode) 5 t P (s) 0.0 1.E-03 0.4 IRM (A) 45 0.1 Tj=25°C (Maximum values) VFM (V) 0 50 Figure 6. 100 150 200 250 300 350 400 450 500 Reverse recovery charges versus dIF/dt (typical values, per diode) Q rr (nC) t rr (ns) 300 3500 IF=IF(AV) VR=200V Tj=125°C 250 IF=IF(AV) VR=200V Tj=125°C 3000 2500 200 2000 150 1500 100 1000 50 500 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 dIF/dt(A/µs) 0 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 3/7 Characteristics Figure 7. 0.8 STTH200L04TV1 Reverse recovery softness factor versus dIF/dt (typical values, per diode) S FACTOR SFACTOR 1.4 1.2 0.6 1.0 0.5 0.8 0.4 tRR 0.6 0.3 IRM 0.4 0.2 QRR 0.2 0.1 dIF/dt(A/µs) 0.0 0 50 Figure 9. 100 150 200 250 300 400 450 500 Transient peak forward voltage versus dIF/dt (typical values, per diode) 25 50 75 100 125 Figure 10. Forward recovery time versus dIF/dt (typical values, per diode) t fr (ns) 1800 IF=IF(AV) Tj=125°C 5.0 IF=IF(AV) VR=200V Reference: Tj=125°C Tj (°C) 0.0 350 VFP (V) 5.5 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 1600 4.5 1400 4.0 1200 3.5 1000 3.0 2.5 800 2.0 600 1.5 400 1.0 200 dIF/dt(A/µs) 0.5 0.0 dIF /dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 10000 F=1MHz VOSC=30mVRMS Tj=25°C 1000 VR(V) 100 1 4/7 Relative variations of dynamic parameters versus junction temperature 1.6 IF < 2 x IF(AV) VR=200V Tj=125°C 0.7 6.0 Figure 8. 10 100 1000 0 50 100 150 200 250 300 350 400 450 500 STTH200L04TV1 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) Table 5. ISOTOP Dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E G2 A C A1 C2 E2 F1 F P1 D G S D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 B ØP G1 E1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information 3 STTH200L04TV1 Ordering information Ordering type Marking Package STTH200L04TV1 STTH200L04TV1 ISOTOP 4 6/7 Weight Base qty 27 g 10 (without screws) (with screws) Revision history Date Revision 11-Aug-2006 1 Description of Changes First issue Delivery mode Tube STTH200L04TV1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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