STTH6110TV Ultrafast recovery - high voltage diode Main product characteristics IF(AV) 2 x 30 A VRRM 1000 V Tj 150° C VF (typ) 1.3 V trr (typ) 42 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 Features and benefits ■ Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current operation ■ High reverse voltage capability ■ High junction temperature ■ Insulated package – Electrical insulation = 2500 VRMS Capacitance = 45 pF A1 K2 K1 A2 K1 K2 ISOTOP STTH6110TV1 A2 ISOTOP STTH6110TV2 Order codes Description The compromise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Part Number Marking STTH6110TV1 STTH6110TV1 STTH6110TV2 STTH6110TV2 These demanding applications include industrial power supplies, motor control, and similar industrial systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate advantage for reducing maintenance of the equipment March 2006 Rev 1 1/8 www.st.com 8 Characteristics STTH6110TV 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IF(AV) Average forward current, δ = 0.5 Per diode IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz square IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Storage temperature range Tj Table 2. Value Unit 1000 V 60 A 30 A 350 A 240 A -65 to + 150 °C 150 °C Tc = 60° C Maximum operating junction temperature Thermal parameters Symbol Parameter Value Rth(j-c) Junction to case Rth(c) Coupling thermal resistance Per diode 1.4 Total 0.75 Unit ° C/W 0.1 When the diodes are used simultaneously: ∆Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Min. Typ Forward voltage drop Tj = 100° C µA 10 100 2.0 IF = 30 A Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.3 x IF(AV) + 0.013 IF2(RMS) 2/8 Unit 15 VR = VRRM Tj = 25° C VF(2) Max. 1.4 1.8 1.3 1.7 V STTH6110TV Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ Max. IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Unit 100 IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C 53 70 IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C 42 55 Reverse recovery current IF = 30 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 24 32 A S Softness factor IF = 30 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C 1 tfr Forward recovery time dIF/dt = 100 A/µs IF = 30 A VFR = 1.5 x VFmax, Tj = 25° C 450 ns Forward recovery voltage IF = 30 A, dIF/dt = 100 A/µs, Tj = 25° C Reverse recovery time trr IRM VFP Figure 1. Conduction losses versus average current Figure 2. P(W) 200 70 =0.05 =0.1 =1 =0.5 =0.2 5 IFM(A) Tj=150°C (Maximum values) 160 50 140 40 120 Tj=150°C (Typical values) 100 30 80 Tj=25°C (Maximum values) 60 20 T 40 10 20 IF(AV)(A) 0 0 5 Figure 3. 10 15 20 25 30 35 40 Relative variation of thermal impedance junction to case versus pulse duration VFM(V) 0 0.0 0.5 Figure 4. 1.0 1.5 2.0 2.5 3.0 3.5 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) Zth(j-c)/Rth(j-c) 60 1.0 0.9 V Forward voltage drop versus forward current 180 60 ns VR=600V Tj=125°C Single pulse 50 0.8 IF= 2 x IF(AV) IF= IF(AV) 0.7 40 0.6 IF=0.5 x IF(AV) 30 0.5 0.4 20 0.3 0.2 10 0.1 0.0 1.E-03 dIF/dt(A/µs) tp(s) 1.E-02 1.E-01 0 1.E+00 1.E+01 0 50 100 150 200 250 300 350 400 450 500 3/8 Characteristics Figure 5. STTH6110TV Reverse recovery time versus dIF/dt (typical values) Figure 6. trr(ns) Reverse recovery charges versus dIF/dt (typical values) Qrr(µC) 8 700 VR=600V Tj=125°C 600 VR=600V Tj=125°C 7 IF= 2 x IF(AV) IF= 2 x IF(AV) 6 500 5 IF= IF(AV) 400 IF= IF(AV ) 4 300 3 200 IF=0.5 x IF(AV) 2 100 1 IF=0.5 x IF(AV) dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 Figure 7. 100 150 200 250 300 350 400 450 500 Softness factor versus dIF/dt (typical values) 0 50 Figure 8. 100 150 200 250 300 350 400 450 500 Relative variations of dynamic parameters versus junction temperature S factor 1.50 2.0 IF = 2 x IF(AV) VR=600V Tj=125°C 1.8 IF = IF(AV) VR=600V Reference: Tj=125°C Sfactor 1.6 1.25 1.4 1.2 1.0 1.00 0.8 IRM 0.6 0.75 0.4 0.2 dIF/dt(A/µs) 0.50 0 4/8 50 100 150 200 250 300 350 400 450 500 0.0 25 tRR QRR 50 Tj(°C) 75 100 125 STTH6110TV Figure 9. Characteristics Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) VFP(V) 1100 25 IF = IF(AV) Tj=125°C tfr(ns) IF = IF(AV) VFR = 1.5 x V F max. Tj=125°C 1000 20 900 800 15 700 600 10 500 400 5 300 dIF/dt(A/µs) dIF/dt(A/µs) 200 0 0 100 200 300 400 500 0 100 200 300 400 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 5/8 Package information 2 STTH6110TV Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 5. ISOTOP dimensions DIMENSIONS REF. Millimeters Inches E Min. Max Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 E2 C 0.75 0.85 0.030 0.033 F C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 G2 A C A1 C2 F1 P1 D G S D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 G1 F1 4.60 5.00 0.181 0.197 E1 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 B ØP In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 STTH6110TV 3 4 Ordering information Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH6110TV1 STTH6110TV1 ISOTOP 27 g 10 Tube STTH6110TV2 STTH6110TV2 ISOTOP 27 g 10 Tube Revision history Date Revision 22-Feb-2006 1 Description of Changes First issue. 7/8 STTH6110TV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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