2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm Output Power : PO = 27.0 dBmW (Min.) Gain : GP = 12.5 dB (Min.) Drain Efficiency : ηD = 46% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS 5 V ID 0.5 A Drain Current Power Dissipation PD* 3.0 W Channel Temperature Tch 150 °C Storage Temperature Range Tstg −45~150 °C *: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB MARKING JEDEC EIAJ TOSHIBA — SC−62 2−5K1D 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 2001-02-02 1/3 2SK3078 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Output Power PO Drain Efficiency ηD Power Gain GP Threshold Voltage Vth TEST CONDITION MIN TYP. MAX UNIT 27.0 ― ― dBmW VDS = 4.8 V Iidle = 108 mA (VGS = adjust) f = 915 MHz, Pi = 14.5 dBmW ZG = ZL = 50 Ω ― 46.0 ― % 12.5 ― ― dB VDS = 4.8 V, ID = 0.5 mA 0.20 ― 1.20 V Drain Cut-off Current IDSS VDS = 10 V, VGS = 0 V ― ― 10 µA Gate-Source Leakage Current IGSS VGS = 5 V, VDS = 0 V ― ― 5 µA CAUTION This transistor is the electrostatic sensitive device. Please handle with caution. RF OUTPUT POWER TEST FIXTURE 2001-02-02 2/3 2SK3078 CAUTION These are only typical curves and devices are not necessarily guaranteed at these curves. 2001-02-02 3/3