2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm · Output power: PO = 7.0 W (min) · Gain: GP = 11.4dB (min) · Drain efficiency: ηD = 60% (min) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gain-source voltage VGSS ±5 V ID 3 A Drain current Power dissipation PD (Note 1) 20 W Channel temperature Tch 150 °C Storage temperature range Tstg −45~150 °C Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) Marking JEDEC ― JEITA ― TOSHIBA 2 UC 1 2-5N1A Type name F 3 ** Dot Lo No. 1. Gate 2. Source (heat sink) 3. Drain Caution Please take care to avoid generating static electricity when handling this transistor. 1 2002-01-09 2SK3476 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut-off current IDSS VDS = 20 V, VGS = 0 V ¾ ¾ 5 mA Gate-source leakage current IGSS VGS = 10 V ¾ ¾ 5 mA 0.55 1.05 1.55 V Threshold voltage Vth VDS = 7.2 V, ID = 2 mA VDS (ON) VGS = 10 V, ID = 75 mA ¾ 18 ¾ mV Forward transconductance Yfs VDS = 7.2 V, IDS = 1 A ¾ 1 ¾ S Input capacitance Ciss VDS = 7.2 V, VGS = 0 V, f = 1 MHz ¾ 53 ¾ pF Output capacitance Coss VDS = 7.2 V, VGS = 0 V, f = 1 MHz ¾ 49 ¾ pF 7 ¾ ¾ W 60 ¾ ¾ % 11.4 ¾ ¾ dB 5 ¾ ¾ W Drain-source on-voltage Output power PO Drain efficiency hD Power gain GP Low voltage output power POL VDS = 6.0 V, Iidle = 500 mA (VGS = adjust), f = 520 MHz, Pi = 500 mW, VDS = 10 V, PO = 7 W, VGS = adjust, Pi = adjust, f = 520 MHz, VSWR LOAD 20:1 all phase ¾ Load mismatch VDS = 7.2 V, Iidle = 500 mA (VGS = adjust), f = 520 MHz, Pi = 500 mW, No degradation Note 1: These characteristic values are measured using measurement tools specified by Toshiba. Output Power Test Fixture (Test Condition: f = 520 MHz, VDS = 7.2 V, Iidle = 500 mA, Pi = 500 mW) C11 C4 C9 C5 R1 C10 Pi ZG = 50 W PO C1 C2 C3 C12 L1 R2 L2 C13 C14 VGS C1: 15 pF C2: 11 pF C3: 9 pF C4: 30 pF C5: 30 pF C6: 11 pF C7: 8 pF C8: 9 pF C9: 2200 pF C10: 2200 pF C11: 2200 pF C12: 10000 pF C13: 10 mF C14: 10000 pF C15: 10 mF C6 C7 C8 ZL = 50 W C15 VDS L1: f0.6 mm enamel wire, 5.8ID, 4T L2: f0.6 mm enamel wire, 5.8ID, 8T 2 R1: 2.2 W R2: 1.5 kW 2002-01-09 2SK3476 PO – Pi PO – Pi 12 20 f = 520 MHz (W) 8 15 9.6 V Tc = 25°C PO 500 mA Iidle = 300 mA Output power Output power Iidle = 500 mA 700 mA Tc = 25°C PO (W) 10 f = 520 MHz VDS = 7.2 V 6 4 10 7.2 V VDS = 6.0 V 5 2 0 0 200 400 600 Input power Pi 800 0 0 1000 200 (mW) 400 Input power Pi hD – Pi f = 520 MHz VDS = 7.2 V Tc = 25°C (%) 80 700 mA 60 500 mA Iidle = 300 mA 40 20 0 0 200 400 600 Input power Pi 800 80 40 200 400 (%) (W) Drain efficiency DD PO Output power (mW) hD – Pi -20°C 60°C 6 25°C Tc = 100°C 2 600 Input power Pi 600 Input power Pi VDS = 7.2 V 400 1000 20 100 200 800 7.2 V 9.6 V (mW) 8 0 0 1000 60 f = 520 MHz 4 800 (mW) VDS = 6.0 V PO – Pi Iidle = 500 mA 1000 f = 520 MHz Iidle = 500 mA Tc = 25°C 0 0 1000 12 10 800 hD – Pi 100 Drain efficiency DD Drain efficiency DD (%) 100 600 800 80 60 (mW) -20°C 60°C 40 Tc = 100°C 25°C 20 0 0 1000 f = 520 MHz VDS = 7.2 V Iidle = 500 mA 200 400 600 Input power Pi (mW) Note 2: These are only typical curves and devices are not necessarily guaranteed at these curves. 3 2002-01-09 2SK3476 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2002-01-09