GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching (FS • Enhancement mode type • High speed: tf = 0.03 μs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.) • FRD included between emitter and collector Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 15 1 ms ICP 30 DC IF 15 1 ms IFM 30 Collector power dissipation (Tc = 25°C) PC 30 W TOSHIBA Junction temperature Tj 150 °C Weight: 1.7 g Tstg −55~150 °C Collector current Emitter-collector forward current Storage temperature range A A JEDEC ― JEITA ― 2-10R1C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking Collector Gate 15J321 Emitter Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-10-31 GT15J321 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA VGE (OFF) IC = 1.5 mA, VCE = 5 V 3.5 ⎯ 6.5 V VCE (sat) IC = 15 A, VGE = 15 V ⎯ 1.90 2.45 V VCE = 20 V, VGE = 0, f = 1 MHz ⎯ 2300 ⎯ pF ⎯ 0.04 ⎯ Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies Rise time Switching time tr Turn-on time Fall time Turn-off time Inductive Load ton VCC = 300 V, IC = 15 A ⎯ 0.17 ⎯ tf VGG = 15 V, RG = 43 Ω ⎯ 0.03 0.15 ⎯ 0.34 ⎯ (Note 1) toff μs Peak forward voltage VF IF = 15 A, VGE = 0 ⎯ ⎯ 2.0 V Reverse recovery time trr IF = 15 A, di/dt = −100 A/μs ⎯ ⎯ 200 ns Thermal resistance (IGBT) Rth (j-c) ⎯ ⎯ ⎯ 4.16 °C/W Thermal resistance (Diode) Rth (j-c) ⎯ ⎯ ⎯ 4.63 °C/W Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 −VGE IC L IC VCC 90% 90% RG VCE 0 VCE 10% 10% td (off) 10% td (on) 10% tr tf toff ton Note 2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 VCE 5% Eoff Eon 2 2006-10-31 GT15J321 IC – VCE VCE – VGE 50 20 Common emitter VCE (V) Common emitter Tc = 25°C 20 30 15 Collector-emitter voltage Collector current IC (A) 40 9 20 8 10 VGE = 7 V 0 0 1 2 3 Collector-emitter voltage 4 Tc = −40°C 16 15 8 4 0 0 5 30 12 VCE (V) IC = 6 A 4 8 12 Gate-emitter voltage 16 VGE (V) VCE – VGE VCE – VGE 20 20 Common emitter VCE (V) Tc = 25°C 16 Collector-emitter voltage Collector-emitter voltage VCE (V) Common emitter 30 12 15 8 4 0 0 IC = 6 A 4 8 12 Gate-emitter voltage 16 Tc = 125°C 16 30 12 15 8 4 0 0 20 IC = 6 A 4 8 VGE (V) IC – VGE 16 20 VGE (V) VCE (sat) – Tc 4 Common emitter VCE = 5 V Collector-emitter saturation voltage VCE (sat) (V) Common emitter (A) 25 Collector current IC 12 Gate-emitter voltage 30 20 15 10 5 20 Tc = 125°C −40 VGE = 15 V 30 A 3 15 A 2 IC = 6 A 1 25 0 0 4 8 12 Gate-emitter voltage 16 0 −60 20 VGE (V) −20 20 60 100 140 Case temperature Tc (°C) 3 2006-10-31 GT15J321 Switching time 0.5 Switching time 3 Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C (μs) 1 ton, tr – RG Switching time ton, tr Switching time ton, tr (μs) 3 0.3 ton 0.1 0.05 tr 0.03 ton, tr – IC Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 1 0.5 0.3 ton 0.1 0.05 0.03 tr 0.01 1 3 10 30 100 Gate resistance Switching time 1 0.5 1000 toff, tf – RG Switching time toff 0.1 0.05 tf 3 10 30 100 Gate resistance RG 300 (A) 0.3 tf 0.1 Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 0.05 0.03 0 3 (Ω) 6 Switching loss 10 Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C (Note 2) 9 Eon, Eoff (mJ) 0.3 Eoff 0.1 12 15 (A) Eon, Eoff – IC Common emitter VCC = 300 V VGG = 15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 5 Eon 0.5 15 toff, tf – IC Collector current IC Switching loss Eon, Eoff (mJ) Switching loss 1 12 toff 0.5 Eon, Eoff – RG Switching loss 3 9 1 0.01 1000 10 5 6 3 0.3 0.01 1 3 Collector current IC Common emitter VCC = 300 V VGG = 15 V IC = 15 A : Tc = 25°C : Tc = 125°C 0.03 0 (Ω) Switching time toff, tf (μs) Switching time toff, tf (μs) 3 RG 300 0.01 3 1 (Note 2) 0.5 0.3 0.1 Eoff Eon 0.05 0.03 0.05 0.03 1 3 10 30 Gate resistance 100 RG 300 0.01 1000 (Ω) 0 3 6 9 Collector current IC 4 12 15 (A) 2006-10-31 GT15J321 C – VCE VCE, VGE – QG 500 Cies 100 3 10 30 100 300 Collector-emitter voltage 1000 12 300 200 8 4 100 0 0 3000 20 Forward current IF (A) Reverse recovery current Irr (A) Common collector VGE = 0 15 Tc = 125°C 25 5 −40 0.4 0.8 1.2 1.6 Forward voltage VF 30 10 100 trr Irr 30 0 3 (V) 3 12 10 15 (A) Reverse bias SOA IC max (pulsed)* 30 50 μs* 100 μs* 1 ms* DC operation 10 ms* 1 *: Single nonrepetitive pulse 0.5 Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 9 Forward current IF (A) (A) Collector current IC 5 6 50 IC max (continuous) 10 300 3 1 2.0 Collector current IC 30 0 120 1000 Common collector di/dt = −100 A/μs VGE = 0 : Tc = 25°C : Tc = 125°C Safe operating area 50 100 trr, Irr − IF 100 20 0 0 80 Gate charge QG (nC) IF − VF 10 60 40 VCE (V) 30 25 200 VCE = 100 V VGE (V) 300 trr (ns) 3 1 Cres Common emitter VGE = 0 f = 1 MHz Tc = 25°C 16 Reverse recovery time 10 Coes VCE (V) 300 RL = 20 Ω 400 Tc = 25°C Collector-emitter voltage Capacitance C (pF) 1000 30 20 Common emitter Gate-emitter voltage 3000 10 5 3 1 0.5 0.3 Tj < = 125°C VGE = 15 V RG = 43 Ω 30 Collector-emitter voltage 100 300 0.1 1 1000 VCE (V) 3 10 30 Collector-emitter voltage 5 100 300 1000 VCE (V) 2006-10-31 GT15J321 Transient thermal impedance rth (t) (°C/W) 10 10 rth (t) – tw 2 Tc = 25°C 1 FRD 10 10 10 10 10 0 IGBT −1 −2 −3 −4 10 −5 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 10 1 10 2 (s) 6 2006-10-31 GT15J321 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-10-31