GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode • High speed IGBT: tf = 0.23 μs (typ.) (IC = 40 A) FRD: trr = 0.7 μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1500 V Gate-emitter voltage VGES ±25 V DC IC 40 1 ms ICP 80 DC IF 30 1 ms IFP 80 Collector power dissipation (Tc = 25°C) PC 200 W Junction temperature Tj 150 °C Tstg −55 to 150 °C Collector current Diode forward current Storage temperature range A A JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking Collector Part No. (or abbreviation code) TOSHIBA GT40T302 Gate Lot No. JAPAN A line indicates Lead(Pb)-Free Finish Emitter 1 2008-12-26 GT40T302 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ⎯ ⎯ ±500 nA Collector cut-off current ICES VCE = 1500 V, VGE = 0 ⎯ ⎯ 1.0 mA VGE (OFF) IC = 40 mA, VCE = 5 V 4.0 ⎯ 7.0 V VCE (sat) IC = 40 A, VGE = 15 V ⎯ 3.7 5.0 V VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 2900 ⎯ pF ⎯ 0.40 ⎯ ⎯ 0.45 ⎯ ⎯ 0.23 0.40 ⎯ 0.6 ⎯ Collector-emitter saturation voltage Input capacitance Cies Rise time Switching time Turn-on time Fall time Turn-off time tr ton tf toff 51 Ω 15 V 0 −15 V 15 Ω Gate-emitter cut-off voltage 600 V μs Diode forward voltage VF IF = 30 A, VGE = 0 ⎯ 1.9 2.5 V Reverse recovery time trr IF = 30 A, VGE = 0, di/dt = −20 A/μs ⎯ 0.7 3.0 μs IGBT ⎯ ⎯ 0.625 Diode ⎯ ⎯ 1.25 Thermal resistance Rth (j-c) 2 °C/W 2008-12-26 GT40T302 IC – VCE VCE – VGE 100 10 15 Common emitter VCE (V) 20 12 80 Collector-emitter voltage Collector current IC (A) 25 60 10 40 20 VGE = 8 V 0 0 2 4 6 8 Collector-emitter voltage Tc = −40°C 8 60 6 20 80 4 IC = 10 A 2 0 0 10 40 VCE (V) 4 8 12 16 Gate-emitter voltage VCE – VGE 20 VGE (V) VCE – VGE 10 10 VCE (V) Tc = 25°C 8 6 Collector-emitter voltage Collector-emitter voltage VCE (V) Common emitter 80 60 40 4 20 IC = 10 A 2 8 80 6 60 40 4 20 2 IC = 10 A Common emitter Tc = 125°C 0 0 4 8 12 Gate-emitter voltage 16 0 0 20 VGE (V) 4 8 Gate-emitter voltage IC – VGE VGE (V) Common emitter VCE = 5 V Collector-emitter saturation voltage VCE (sat) (V) (A) 20 10 Common emitter Collector current IC 16 VCE (sat) – Tc 100 80 12 60 40 25 20 Tc = 125°C VGE = 15 V 8 6 80 60 4 40 20 2 IC = 10 A −40 0 0 4 8 12 Gate-emitter voltage 16 0 −80 20 VGE (V) −40 0 40 80 120 160 Case temperature Tc (°C) 3 2008-12-26 GT40T302 VCE, VGE – QG Switching time – RG Common emitter RL = 7.5 Ω Tc = 25°C 30 Switching time (μs) Collector-emitter voltage VCE (×10 V) Gate-emitter voltage VGE (V) 10 20 200 10 300 5 3 Common emitter VCC = 600 V IC = 40 A VGG = ±15 V Tc = 25°C toff ton tr 1 tf 0.5 0.3 VCE = 100 V 0 0 40 80 120 160 200 240 0.1 1 280 3 5 Gate charge QG (nC) 10 Gate resistance Switching time – IC Switching time (μs) 3 1 RG 300 500 1000 (Ω) C – VCE Common emitter VCC = 600 V RG = 51 Ω VGG = ±15 V Tc = 25°C 5000 3000 (pF) 5 100 10000 toff Capacitance C 10 30 50 ton tr 0.5 0.3 tf 0.1 0.05 Cies 1000 500 300 Coes 100 50 30 10 0.03 5 3 0.01 0 1 1 Cres Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 10 20 30 Collector current IC 40 50 (A) 3 100 VCE (V) Reverse bias SOA IC max (pulsed)* 1 ms* 100 IC max (continuous) (A) 10 μs* 100 μs* Collector current IC (A) Collector current IC 50 10 ms* 50 10 5 30 200 300 30 10 Collector-emitter voltage Safe operating area 100 5 DC operation 3 *: Single nonrepetitive pulse Tc = 25°C 1 Curves must be derated linearly with increase in 0.5 temperature. 0.3 1 3 10 30 30 10 Tj ≤ 125°C VGE = ±15 V RG = 51 Ω 100 Collector-emitter voltage 300 1000 3 10 3000 VCE (V) 4 30 100 300 1000 Collector-emitter voltage VCE (V) 3000 2008-12-26 GT40T302 10 Rth (t) – tw 1 IF – V F 100 Diode 0 (A) 10 Forward current IF Transient thermal impedance Rth (t) (°C/W) Common collector 80 IGBT 10−1 10−2 Tc = 40°C 60 25 40 125 20 Tc = 25°C 10−3 10−5 10−4 10−3 10−2 10−1 Pulse width tw 10 0 10 1 10 0 0 2 1 (s) 2 Forward voltage VF Irr, trr – IF 0.5 0 0.8 12 Irr trr 4 0 0 20 40 60 Forward current IF 80 0.6 0.4 0.2 0 100 (A) Irr (A) (μs) Tc = 25°C trr Irr (A) di/dt = −20 A/μs 8 5 (V) 50 Peak reverse recovery current 1.0 Common collector Reverse recovery time Reverse recovery time 1.5 1.0 16 4 Irr, trr – di/dt 20 Peak reverse recovery current 2.0 trr (μs) 2.5 3 Common collector IF = 30 A 40 Tc = 25°C 30 trr 20 10 0 0 Irr -20 -40 -60 -80 -100 -120 di/dt (A/μs) 5 2008-12-26 GT40T302 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2008-12-26