GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 μs (max) • Low saturation voltage: VCE (sat) = 2.7 V (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 25 1 ms ICP 50 Collector power dissipation (Tc = 25°C) PC 200 W Junction temperature Tj 150 °C Tstg −55 to 150 °C Collector current Storage temperature range A JEDEC ― JEITA ― TOSHIBA 2-21F2C Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Part No. (or abbreviation code) TOSHIBA GT25Q102 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT25Q102 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 ⎯ ⎯ 1.0 mA VGE (OFF) IC = 2.5 mA, VCE = 5 V 4.0 ⎯ 7.0 V VCE (sat) IC = 25 A, VGE = 15 V ⎯ 2.1 2.7 V VCE = 50 V, VGE = 0, f = 1 MHz ⎯ 1360 ⎯ pF Inductive Load ⎯ 0.10 ⎯ VCC = 600 V, IC = 25 A ⎯ 0.30 ⎯ VGG = ±15 V, RG = 43 Ω ⎯ 0.16 0.32 ⎯ 0.68 ⎯ ⎯ ⎯ 0.625 Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Switching time Cies Rise time tr Turn-on time ton Fall time tf Turn-off time toff Thermal resistance (Note1) ⎯ Rth (j-c) μs °C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT25Q301 90% 10% 0 −VGE IC L RG IC VCC 90% VCE 0 VCE 10% 10% td (off) 90% 10% td (on) 10% tr tf toff ton Note2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 10% VCE Eoff Eon 2 2006-11-01 GT25Q102 IC – VCE VCE – VGE 50 20 Common emitter VCE (V) Common emitter Tc = 25°C 20 15 Collector-emitter voltage Collector current IC (A) 40 30 20 10 10 0 VGE = 9 V 0 1 2 3 4 Collector-emitter voltage Tc = −40°C 16 12 8 25 IC = 10 A 0 0 5 4 VCE (V) 8 VGE (V) VCE (V) Common emitter Tc = 25°C 16 Collector-emitter voltage VCE (V) Collector-emitter voltage 20 20 Common emitter 12 8 50 IC = 10 A 4 0 4 8 25 12 Gate-emitter voltage 16 Tc = 125°C 16 12 8 50 4 8 VGE (V) Common VCE = 5 V emitter Collector-emitter saturation voltage VCE (sat) (V) Common emitter 30 25 0 0 Tc = 125°C 4 −40 8 12 Gate-emitter voltage 16 20 VGE (V) VCE (sat) – Tc 4 40 10 12 Gate-emitter voltage IC – VGE 20 25 IC = 10 A 4 0 0 20 50 (A) 16 VCE – VGE VCE – VGE Collector current IC 12 Gate-emitter voltage 20 0 50 4 16 3 25 VGE (V) IC = 10 A 2 1 0 −60 20 50 VGE = 15 V −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT25Q102 Switching time (μs) 0.3 0.1 tr 5 10 30 50 Gate resistance Switching time 3 1 100 RG 300 ton 0.3 0.1 tr Common emitter VCC = 600 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 0.05 0.03 0.01 500 0 5 (Ω) 10 15 Switching time toff, tf – RG 30 50 Gate resistance Switching loss RG 300 tf 0.1 0.05 Common emitter VCC = 600 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C 0.03 0.01 500 10 15 20 Switching loss 25 30 (A) Eon, Eoff – IC Eon, Eoff (mJ) 10 Eon Eoff 3 1 10 5 Collector current IC Eon, Eoff – RG Common emitter VCC = 600 V VGG = ±15 V IC = 25 A : Tc = 25°C : Tc = 125°C Note2 5 0 (Ω) Switching loss Eon, Eoff (mJ) Switching loss 100 5 0.5 3 toff, tf – IC 0.3 0.1 10 (A) 0.5 tf 30 30 toff toff 0.3 10 25 1 Common emitter VCC = 600 V VGG = ±15 V IC = 25 A : Tc = 25°C : Tc = 125°C 5 20 Collector current IC 0.5 0.05 3 ton, tr – IC 0.5 ton 0.5 0.05 3 Switching time toff, tf (μs) Switching time 1 Switching time ton, tr 1 ton, tr – RG Common emitter VCC = 600 V VGG = ±15 V IC = 25 A : Tc = 25°C : Tc = 125°C Switching time toff, tf (μs) Switching time ton, tr (μs) 3 30 50 Gate resistance 100 RG 300 5 (Ω) Eoff 1 Common emitter VCC = 600 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C Note2 0.5 0.3 0.1 500 Eon 3 0 5 10 15 20 Collector current IC 4 25 30 (A) 2006-11-01 GT25Q102 VCE, VGE – QG VCE (V) 3000 Cies Collector-emitter voltage Capacitance C (pF) 10000 1000 300 Coes 100 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 30 10 0.1 0.3 1 Cres 3 10 30 Collector-emitter voltage 100 300 800 400 600 12 VCE = 200 V 400 4 40 80 120 0 200 160 Gate charge QG (nC) Safe operating area Reverse bias SOA 100 IC max (pulsed)* 50 50 μs* IC max 30 (continuous) 30 100 μs* (A) (A) 10 3 1 0.5 1 ms* DC operation 5 Collector current IC Collector current IC 8 200 VCE (V) 100 50 16 600 0 0 1000 20 Common emitter RL = 12 Ω Tc = 25°C VGE (V) 1000 Gate-emitter voltage C – VCE 10 ms* *: Single nonrepetitive pulse Tc = 25°C Curves must be derated 0.3 linearly with increase in temperature. 0.1 1 3 10 30 100 Collector-emitter voltage 10 300 1000 10 5 3 1 0.5 Tj < = 125°C 0.3 VGE = ±15 V 0.1 1 3000 VCE (V) RG = 43 Ω 3 10 30 100 Collector-emitter voltage 300 1000 3000 VCE (V) Rth (t) – tw 2 Transient thermal impedance Rth (t) (°C/W) Tc = 25°C 10 10 10 10 10 10 1 0 −1 −2 −3 −4 10 −5 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 10 1 10 2 (s) 5 2006-11-01 GT25Q102 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01