STMICROELECTRONICS BD439

BD439/BD440
BD441/BD442
COMPLEMENTARY SILICON POWER TRANSISTORS
■
■
SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD439 and BD441 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package, intented for use in power linear and
switching applications.
The complementary PNP types are BD440, and
BD442 respectively.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BD439
BD441
PNP
BD440
BD442
V CBO
Collector-Base Voltage (I E = 0)
60
80
V CES
Collector-Emitter Voltage (V BE = 0)
60
80
V
V CEO
Collector-Emitter Voltage (I B = 0)
60
80
V
V EBO
Emitter-Base Voltage (I C = 0)
5
V
Collector Current
4
A
Collector Peak Current (t ≤ 10 ms)
7
A
IC
I CM
IB
Base Current
P tot
Total Dissipation at T c ≤ 25 o C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
V
1
A
36
W
-65 to 150
o
C
150
o
C
For PNP types voltage and current values are negative.
May 1997
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BD439/BD440/BD441/BD442
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
3.5
100
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Max.
Unit
I CBO
Collector Cut-off
Current (I E = 0)
Parameter
for BD439/440
for BD441/442
V CB = 60 V
V CB = 80 V
100
100
µA
µA
I CES
Collector Cut-off
Current (V BE = 0)
for BD439/440
for BD441/442
V CB = 60 V
V CB = 80 V
100
100
µA
µA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
1
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
V CE(sat) ∗
V BE ∗
h FE ∗
Test Conditions
I C = 100 mA
for DB439/440
for BD441/442
Collector-Emitter
Saturation Voltage
IC = 2 A
I B = 0.2 A
Base-Emitter Voltage
I C = 10 mA
IC = 2 A
V CE = 5 V
V CE = 1 V
I C = 10 mA
V CE = 5 V
for BD439/440
for BD441/442
V CE = 1 V
for BD439/440
for BD441/442
V CE = 1 V
for BD439/440
for BD441/442
DC Current Gain
I C = 500 mA
IC = 2 A
h FE1 /h FE2 ∗ Matched Pair
fT
Transition frequency
IC = 500 mA
V CE = 1 V
I C = 250 mA
V CE = 1 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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Min.
Typ.
60
80
V
V
0.8
V
1.5
V
V
0.58
20
15
130
130
40
40
140
140
25
15
1.4
3
MHz
BD439/BD440/BD441/BD442
SOT-32 (TO-126) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
e3
2.2
4.15
F
G
4.65
0.163
3.8
3
0.183
0.150
3.2
H
H2
0.087
0.118
0.126
2.54
0.100
2.15
0.084
H2
0016114
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BD439/BD440/BD441/BD442
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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