TSC MMBT3904

MMBT3904
Pb
0.2 Watts NPN Plastic-Encapsulate Transistors
RoHS
COMPLIANCE
SOT-23
Features
—
As complementary type, the PNP transistor
MMBT3906 is recommended
—
Epitaxial planar die construction
—
Marking: 1AM
Dimensions in inches and (millimeters)
Maximum Ratings
Type Number
TA=25 oC unless otherwise specified
Value
60
40
6
0.2
0.2
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current - continuous
Collector Power dissipation
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
IC=10uA, Ie=0
Collector-emitter breakdown voltage IC=1mA, IB=0
Emitter-base breakdown voltage
IE=10uA, IC=0
Collector cut-off current
VCB=60V IE=0
Collector cut-off current
VCE=30V VBE(off)=3V
Emitter cut-off current
VEB=5V IC=0
DC current gain
VCE=1V IC=10mA
VCE=1V IC=50mA
VCE=1V IC=100mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
Transition frequency VCE=20V IC=10mA f=100MHz
Delay time
VCC=3V VBE=0.5V IC=10mA
Rise time
IB1= IB2=1.0mA
Storage time
VCC=3V IC=10mA
Fall time
IB1= IB2=1.0mA
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
Symbol
MIN
V(BR)CBO
V(BR)CEO
VBE(ON)
ICBO
ICEO
IEEO
hFE(1)
hFE(2)
hFE(3)
60
40
6
100
60
30
TJ, TSTG
V
V
V
A
W
MAX
Units
0.1
50
0.1
400
0.3
0.95
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
Units
250
35
35
200
50
-55 to + 150
CLASSIFICATION OF hFE1
Rank
Range
O
100-200
Y
200-300
G
300-400
Version: A07
V
V
V
uA
nA
uA
V
V
MHz
nS
nS
nS
nS
o
C
RATINGS AND CHARACTERISTIC CURVES (MMBT3904)
Version: A07