TSD2444 Low Vcesat NPN Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO 40V BVCEO 25V IC 800mA VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) Excellent DC Current Gain Characteristics Part No. TSD2444CX RF Structure ● ● 40mV @ IC / IB = 50 / 2.5mA Package Packing SOT-23 3Kpcs / 7” Reel Epitaxial Planar Type Complementary to TSB1590CX Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol Limit Unit VCBO VCEO VEBO IC Ptot TJ TSTG 40 25 6 800 225 +150 - 55 to +150 V V V mA mW o C o C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage IC = 100uA, IE = 0 IC = 2mA, IB = 0 BVCBO BVCEO 40 25 --- --- V V Emitter-Base Breakdown Voltage Collector Cutoff Current IE = 100uA, IC = 0 VCB = 30V, IE = 0 BVEBO ICBO 6 -- --- -0.5 V uA Emitter Cutoff Current IEBO *VCE(SAT) 1 *VCE(SAT) 2 --- -0.04 0.15 0.5 0.06 0.3 uA V Collector-Emitter Saturation Voltage VEB = 6V, IC = 0 IC = 50mA, IB = 2.5mA IC = 400mA, IB = 20mA Base-Emitter on Voltage IC = 800mA, IB = 80mA VCE = 1V, IC = 10mA *VCE(SAT) 3 VBE(ON) --- 0.25 -- 0.6 1.0 VCE = 1V, IC = 100mA VCE = 1V, IC = 600mA hFE 1 hFE 2 180 40 --- 560 -- Transition Frequency VCE = 5V, IC=-100mA Output Capacitance VCB = 10V, f=1MHz * Pulse Test: Pulse width ≤380us, Duty cycle ≤ 2% fT Cob --- 150 15 --- DC Current Transfer Ratio 1/4 V MHz pF Version: A08 TSD2444 Low Vcesat NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Collector Current Figure 3. VBE(SAT) v.s. Collector Current Figure 4. Power Derating Curve Figure 5. Cutoff Frequency v.s. Collector Current 2/4 Version: A08 TSD2444 Low Vcesat NPN Transistor SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J 3/4 SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Version: A08 TSD2444 Low Vcesat NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A08