UTC 2SA1507 PNP EPITAXIAL SILICON TRANSISTORS SWITCHING TRANSISTOR APPLICAITONS *Color TV audio output, converters, inverters. FEATURES *High breakdown voltage *Large current capacitance. *High-speed switching 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Collector Dissipation Collector Dissipation(Tc=25°C) Junction Temperature Storage Temperature SYMBOL RATINGS UNIT VCBO VCEO VEBO Ic Icp Pc Pc Tj TSTG -180 -160 -6 -1.5 -2.5 1.5 10 150 -55 to +150 V V V A A W W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER Collector-to-Base Breakdown Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-On Time UTC SYMBOL TEST CONDITIONS MIN V(BR)CBO V(BR)CEO V(BR) EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton Ic=-10µA IE=0 Ic= -1mA,RBE=∞ -180 -160 -6 Ic=0, IE= -10µA VCB= -120V,IE=0 VEB= -4V,Ic=0 VCE= -5V,Ic= -100mA VCE= -5V,Ic= -10mA Ic= -500mA,IB= -50mA Ic= -500mA,IB= -50mA VCE= -10V,Ic= -50mA VCB= -10V, f=1MHz See specified Test Circuit UNISONIC TECHNOLOGIES TYP MAX -0.1 -0.1 400 100 90 -0.2 -0.83 120 22 0.04 -0.5 -1.2 CO. LTD UNIT V V V µA µA V V MHz pF µs 1 QW-R204-009,A UTC 2SA1507 PNP EPITAXIAL SILICON TRANSISTORS PARAMETER SYMBOL TEST CONDITIONS tstg tf See specified Test Circuit See specified Test Circuit Storage Time Fall Time MIN TYP MAX 0.7 0.04 UNIT µs µs CLASSIFICATION OF hFE1 RANK RANGE R 100-200 S 140-280 T 200-400 SWITCHING TIME TEST CIRCUIT PW=20μs D.C.≦1% IB2 IB1 INPUT 50Ω UTC OUTPUT RB + RL + 14.3Ω 100μF 470μF 5V -100V -10IB1=10IB2=IC= 0.7A VR UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-009,A UTC 2SA1507 PNP EPITAXIAL SILICON TRANSISTORS TYPICAL CHARACTERISTICS Ic-VCE Ic-VCE -1.0 -1.8 -60mA -1.4 -80mA -1.2 -1.0 A -20m 0m A -0.8 -4 -0.6 -10mA -5mA -2mA -0.4 -0.2 0 Collector Current Ic -A Collector Current Ic -A -1.6 -2 -3 -4.5mA -4.0mA -3.5mA -0.6 -3.0mA -2.5mA -2.0mA -0.4 -1.5mA -0.2 -1mA -1 0 -5.0mA -0.8 -1.0mA -0.5mA IB=0 -4 0 0 -5 Collector -to-Emitter Voltage,VCE-V -10 -20 IB=0 -30 -40 Ic-VBE hFE -Ic -1.6 5 VCE= -5V -1.4 -50 Collector -to-Emitter Voltage,VCE-V VCE= -5V Ta =75⊥ 3 DC Current Gain,hFE Collector Current ,Ic -A 2 -1.2 -1.0 -0.8 Ta =-25⊥ -0.6 Ta =25⊥ Ta =75⊥ -0.4 100 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base-to-Emitter Voltage,VBE-V 3 2 10 7 5 7 -0.01 -0.2 -1.2 Ta =-25⊥ Ta =25⊥ 7 5 2 3 5 7 -0.1 2 3 5 7 -1.0 Collector Current,Ic -A fT -Ic Cob-VCB 2 VCE= -10V 3 f=1MHz Output Capacitance,Cob-pF Gain-Bandwidth Product,fT-MHz 5 2 -100 7 5 3 2 -10 7 5 2 3 7 -0.01 UTC 2 3 5 7 -0.1 2 3 5 7 -1.0 2 -100 7 5 3 2 -10 7 5 3 7 -1.0 2 3 UNISONIC TECHNOLOGIES 5 7 -10 2 3 CO. LTD 5 7 -100 3 QW-R204-009,A UTC 2SA1507 PNP EPITAXIAL SILICON TRANSISTORS Collector-to-Base Voltage,VCB-V Collector Current,Ic -A VCE(sat)-Ic -1000 -10 Ta =75℃ 5 Ta =25℃ 3 2 Ta =-25℃ 7-0.01 IC -1.0 2 Ta =-25℃ -1.0 7 Ta =25℃ Ta =75℃ 5 3 7-0.01 2 3 5 7 -1.0 2 3 5 7-0.1 Collector Current,Ic -A 2 3 1.6 1.5 1.4 10ms 10 0m s Op era DC tio n Op Tc era =2 tio 5℃ nT c= 25 ℃ DC 5 3 2 3 Pc -Ta ASO Icp IC/IB=10 7 5 2 2 3 s -10 5 3 2 2 3 5 7 -1.0 2 3 5 7-0.1 Collector Current,Ic -A 1m Collector Current,Ic -A Collector-to-Emitter Saturation Voltage,VBE (sat) -mV 5 3 2 -10 5 3 Ta = 25℃ 2 -0.01 Single pulse 5 2 3 5 7-100 2 3 7 -1.0 2 3 5 7 -10 Collector-to-Emitter Voltage,VCE-V Collector Dissipation,Pc -W Collector-to-Emitter Saturation Voltage,VCE (sat) -mV 5 3 2 -100 VBE(sat)-Ic -10 IC/IB=10 1.2 No 1.0 he at 0.8 si n k 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature,Ta -℃ Pc -Tc Collector Dissipation,Pc -W 12 10 8 6 4 2 0 0 20 UTC 40 60 80 100 120 Case Temperature, Tc-℃ 140 160 UNISONIC TECHNOLOGIES CO. LTD 4 QW-R204-009,A UTC 2SA1507 PNP EPITAXIAL SILICON TRANSISTORS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 5 QW-R204-009,A