UTC-IC 2SC3835

UTC 2SC3835
NPN EPITAXIAL SILICON TRANSISTOR
SWITCH NPN TRANSISTOR
APLLICATION
*Humidifier,DC-DC converter,and general purpose.
1
TO-3PN
1: BASE
2:COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Collector Current (PULSE)
Collector Power Dissipation( Tc=25°C )
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IB
200
120
8
3
7
14
70
150
-55 ~ +150
V
V
V
A
A
A
W
°C
°C
Ic
Pc
Tj
TSTG
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Turn-on Time
Storage Time
Fall Time
BVCEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
UTC
TEST CONDITIONS
MIN
Ic= 50mA
VCB=200V, IE=0
VEB= 8V, Ic =0
VCE= 4V,Ic= 3A
Ic=3A ,IB=0.3A
Ic=3A ,IB=0.3A
VCE=12V,IE=-0.5mA
VCB= 10V, IE= 0 A,f=1MHz
See specified Test Circuit
120
UNISONIC TECHNOLOGIES
TYP
MAX
100
100
220
0.5
1.2
70
30
110
0.5
3.0
0.5
CO. LTD
UNIT
V
μA
μA
V
V
MHz
pF
µs
µs
µs
1
QW-R214-002,A
UTC 2SC3835
NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION of hFE
RANK
RANGE
A
70-130
B
120-170
C
160-220
Typical Switching Characteristics(Common Emitter)
Ic
(A)
3
16.7
+VBB1
0
50μs
0
20μs
-VBB2
IC
R1
VBB2
(V)
-5
VBB1
(V)
10
IB1
(A)
0.3
IB2
(A)
-0.6
VCC
IB1
IB
D.U.T
0
R2 IB2
0.9IC
0.1IC
IC
RL
0
GND
IB1 IB2
RL
(Ω)
Vcc
(V)
50
0
0
tON
tstg tf
ELECTRICAL CHARACTERISTICS CURVES
Ic-VCE
m
200
15 0m
A
10 0m
5
A
A
60 m
4
A
40 m
2
IB=10mA
1
0
0
UTC
1
2
3
Collector-Emitter Voltage VCE (V)
4
1
0
0.005 0.01
5A
A
20 m
2
3A
3
2.6
A
IC=1
Collector Current, Ic (A)
6
VCE(sat)-IB
A
Collector-Emitter Saturation Voltage,
VCE(sat) (V)
7
0.5
0.05 0.1
Base Current, IB (A)
UNISONIC TECHNOLOGIES
CO. LTD
1
2
QW-R214-002,A
UTC 2SC3835
NPN EPITAXIAL SILICON TRANSISTOR
IC-VBE Temperature
7
fT–IE
30
VCE=12V
Cut- off Frequency, fT (MH Z)
5
1
0
0
0.5
-30℃
(Tc)
℃
2
25℃
3
(Tc
)
(Tc
)
4
125
Collector Current, Ic (A)
6
1.0 1.1
20
10
0
-0.01
-0.05-0.1
Base-Emittor Voltage, VBE (V)
DC Current Gain, HFE
HFE-Ic
200
VCE=4V
125℃
Typ
100
50
20
0.02
-5
HFE-Ic Temperature
300
VCE=4V
100
-0.5 -1
Emitter Current, IE (A)
25℃
50
0.1
0.5 1
Collector Current Ic (A)
5 7
20
0.01
-30℃
0.05 0.1
0.5 1
Collector Current Ic (A)
5 7
Transient Thermal Resistance,
θj-a (C/W)
θj-a–t
5
1
0.5
0.4
1
UTC
10
100
Time, t (ms)
1000 2000
UNISONIC TECHNOLOGIES
CO. LTD
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QW-R214-002,A
UTC 2SC3835
NPN EPITAXIAL SILICON TRANSISTOR
Safe Operating Area (Single Pulse)
20
0.05
5
10
50
120
Collector-Emitter Current, VcE (A)
200
30
k
0.1
40
sin
at
He
Without Healstink
Natural Cooling
ite
fin
In
0.5
50
ith
1
60
W
s
10m
5
70
Maximum Power Dissipation, Pc (W)
10
Collector Current, Ic (A)
Pc–Ta Derating
10
0m
s
20
10
3.5
00
Without Heatsink
25
50
75
100
125
150
Ambient Temperature Ta (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
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QW-R214-002,A