UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES 1 * High voltage: VCEO= 120V * High transition frequency: fT=120MHz(typ.) * Pc=1.0 ~ 2.0 W(mounted on ceramic substrate) * Complementary to 2SA1201 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current VCBO VCEO VEBO IC IB PC Collector power dissipation PC(Note 1) Junction temperature Tj Storage temperature range Tstg Note 1: Mounted on ceramic substrate( 250mm2×0.8t ) RATINGS UNIT 120 120 5 800 160 500 1000 150 -55 ~ 150 V V V mA mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance SYMBOL V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob TEST CONDITION IC=10mA, IB=0 IE=1mA, Ic=0 VCB=120V, IE=0 VEB=5V, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=5V, IC=100mA VCB=10V, f=1MHz, IE=0 MIN TYP MAX UNIT 120 5 0.1 0.1 240 1.0 1.0 80 120 30 V V μA μA V V MHz pF CLASSIFICATION OF hFE RANK RANGE UTC O 80 - 160 Y 120 - 240 UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R208-032,A UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL PERFORMANCE CHARACTERISTICS Ic - VCE 10 600 5 3 400 2 200 IB R=1mA L=8次 0 0 12 8 4 Collector-emitter voltage VCE (V) 0 Collector -emitter saturation voltage, VCE (sat) (V) RL=8次 Ta=100℃ 300 25 100 -25 50 30 10 16 VCE(sat) - Ic 1 Common emitter VCE=5V 500 0.5 30 100 300 10 Collector current Ic (mA) 3 Common emitter VCE=5V 0.8 0.3 0.1 RL=8次 Ta=100℃ 25 0.6 RL=8次 Ta=100℃ 25 0.4 -25 0.2 0.05 0.03 10 3 -25 30 100 300 0 1000 1.0 0.4 0.6 0.2 0.8 Base-emitter voltage VBE (V) 0 Collector current, Ic (mA) Safe Operating Area 1000 Ic max (continuous) 500 300 10ms* 1ms* 100ms* 100 DC operation Ta=25℃ 50 30 10 5 3 *:Single nonrepetitive pulse Ta=25℃ Curves must be derated linearly with increase in temperature Tested without a substrate 1 0.3 3 10 100 30 1 Collector-emitter voltage, VCE (V) UTC 1.2 Pc - Ta 1.2 Ic max (pulse)* Collector power dissipation, Pc (W) 3000 Collector current, Ic (mA) 1000 Ic - VBE 1.0 Common emitter Ic/IB=10 Collector current, Ic (A) Collector current, Ic (mA) 50 20 hFE - Ic 1000 Common emitter Ta=25℃ Collector current, Ic (mA) 800 (1) Mounted on ceramic substrate 2 ( 250mm × 0.8t ) (2) No heat sink (1) 1.0 0.8 0.6 (2) 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient temperature, Ta (℃) 300 UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R208-032,A UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R208-032,A