UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W(Ta=25℃) *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Pulse Collector Current (Note 1) Base Current Collector Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature Range Note 1 :PW≦10ms,Duty Cycle≦50% SYMBOL RATING UNIT VCBO VCEO VEBO Ic Icp IB 60 60 7 5 8 1 1.5 20 150 -55 ~ +150 V V V Pc Tj Tstg A A W ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃,unless otherwise specified ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage UTC SYMBOL ICBO IEBO hFE1 hFE2* hFE3 VCE(sat)* VBE(sat)* TEST CONDITIONS VCB=50V,IE=0 VEB=7V,Ic=0 VCE=1V,Ic=0.1A VCE=1V,Ic=2A VCE=2V,Ic=5A Ic=2A,IB=0.2A Ic=2A,IB=0.2A UNISONIC TECHNOLOGIES MIN TYP. MAX. UNIT 10 10 μA μA 60 160 400 50 0.1 0.9 0.3 1.2 CO. LTD V V 1 QW-R217-003,A UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR CHARACTERISTIC Switching Time SYMBOL Turn On Time Ton Storage Time Fall Time Tstg Tf TEST CONDITIONS 20μsec MIN TYP. MAX. UNIT OUTPUT IB1 INPUT 5Ω IB1 IB2 Ω IB2 IB1=-IB2=0.2A DUTY CYCLE≦1% 0.2 1 1.1 0.2 2.5 1 μs Vcc=10V * : Pulse test: PW≦50μS, Duty Cycle≦2% Pulse CLASSIFICATION OF hFE2 RANK RANGE O 160-320 Y 200-400 ELECTRICAL CHARACTERISTICS CURVES dT - Tc Pc - Ta 1 1 20 2 160 Tc=Ta INFINITE HEAT SINK NO HEAT SINK 140 Ic DERATIN dT(%) POWER DISSIPATION Pc(W) 25 15 10 5 0 2 120 100 S/b Lim ited Di ss ipa ti o nL im ite d 80 60 40 20 0 50 100 0 200 150 0 AMBIENT TEMPERATURE Ta(℃) 75 100 125 150 175 200 REVERSE BIAS SAFE OPERATING AREA 10 10 m 1 0.5 0.3 s* s* 20 Di 0m ss s ip at io n Lim ite d Ic(DC)MAX. *SINGLE NONREPETIVE PULSE Ta=25℃ CURVES MUST BE DERATED LINEARLY WITH INCREASE INTEMPERATURE 1 3 5 10 s/ b Li m ite d 30 50 COLLECTOR-EMITTER VOLTAGE VCE (V) UTC 100 8 6 4 VCEO (SUS). 5 3 2m COLLECTOR CURRENT Ic(A) 10 Ic(Pulse)MAX. VCEO (MAX.) COLLECTOR CURRENT Ic(A) 50 CASE TEMPERATURE Tc(℃) SAFE OPERATING AREA 0.1 25 2 0 0 20 40 60 80 100 COLLECTOR-EMITTER VOLTAGE VCE(V) UNISONIC TECHNOLOGIES CO. LTD 2 QW-R217-003,A UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR Ic - VCE hFE - Ic A IB=80mA A A IB=40m 6 A IB=30m 200 mA 4 IB=20mA IB=10mA 2 0 IB=60m DC CURRENT GAIN hFE A 10 0m IB = 15 0m IB = 8 IB= COLLECTOR CURRENT Ic(A) 10 1k 500 300 100 50 30 IB=0mA 0.4 0 0.8 1.2 1.6 VCE=2V VCE=1V 10 5 3 1 0.01 2.0 0.03 STATURATION VOLTAGE VBE(sat),VCE(sat) (V) COLLECTOR-EMITTER VOLTAGE VCE(V) 0.1 0.3 1 3 10 COLLECTOR CURRENT Ic(A) VBE(sat),VCE(sat) - Ic 10 5 3 Ic/IB=10 VBE(sat) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.01 VCE(sat) 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT Ic(A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R217-003,A