UTC-IC 2SC3648-AB3-R

UNISONIC TECHNOLOGIES CO.,
2SC3648
NPN EPITAXIAL SILICON TRANSISTOR
HIGH-VOLTAGE SWITCHING
PREDRIVER APPLICATIONS
FEATURES
1
* High breakdown voltage and large current capacity
* Fast switching speed
* Over Current Protection Function
SOT-89
*Pb-free plating product number: 2SC3648L
PIN CONFIGURATION
PIN NO.
PIN NAME
1
Emitter
2
Collector
3
Base
ORDERING INFORMATION
Order Number
Normal
Lead free
2SC3648-AB3-R 2SC3648L-AB3-R
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
Package
Packing
SOT-89
Tape Reel
1
QW-R208-038,A
2SC3648
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
PC (Mounted on ceramic
board 250mm2 ×0.8mm)
PC
TJ
TSTG
Collector Dissipation
Junction Temperature
Storage Temperature
RATINGS
180
160
6
0.7
1.5
UNIT
V
V
V
A
A
1.3
W
500
150
-40 ~ +150
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Collector Cutoff Curent
Emitter Cutoff Curent
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Output Capacitance
Cob
hFE 1
hFE 2
tON
tSTG
tF
DC Current Gain
Turn-on Time
Storage Time
Fall Time
Gain-Bandwidth Product
■
fT
MIN
TYP
0.12
0.85
MAX
0.4
1.2
180
160
6
0.1
0.1
8
100
90
UNIT
V
V
V
V
V
µA
µA
pF
400
50
1000
60
120
ns
ns
ns
MHz
CLASSIFICATION OF hFE 1
RANK
RANGE
■
TEST CONDITIONS
IC =250mA, IB =25mA
IC =250mA, IB =25mA
IC =10µA, IE =0
IC =1, RBE =∞
IE =10µA, IC=0
VCB =120V, IE =0
VEB =4V, IC =0
VCB =10V, f =1MHz
VCE =5V, IC =100mA
VCE =5V, IC =10mA
See specified Test circuit
See specified Test circuit
See specified Test circuit
VCE =5V, IC =50mA
VCE(sat)
VBE(sat)
R
100 ~ 200
S
140 ~ 280
T
200 ~ 400
SWITCHING TIME TEST CIRCUIT
PW=20μS
DC≤1%
IB1
RB
INPUT
IB2
VR
333
50
+
100μ
-5V
+
470μ
100V
20I B1= -20IB2 =IC=300mA
Unit (Resistance:Ω, Capacitance:F )
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R208-038,A
2SC3648
■
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERICS
IC - VCE
IC - VCE
1000
80mA
70mA
60mA
50mA
40mA
700 100mA
90mA
600
500
Collector Current, Ic (mA)
Collector Current, Ic (mA)
800
30mA
400
20mA
300
10mA
200
800
4.0mA
3.5mA
3.0mA
600
2.5mA
2.0mA
400
1.5mA
200
1.0mA
100
0
0
200
400
600
IB =0
1000
800
0.5mA
0
0
Collector to Emitter Voltage, VCE (mV)
10
20
30
Pulse
7
5
DC Current Gain, hFE
Collector Current, Ic (mA)
VCE = 5V
600
400
3
2
100
VCE=2V
VCE=5V
VCE=10V
7
5
3
2
10
200
7
5
0
0
0.2
0.4
0.6
0.8
1.0
3
1.2
3
5
7
10
2
3
Collector-to-Emitter Saturation Voltage,
VCE (sat) (V)
F= 1MHZ
7
5
3
2
10
7
5
3
2
1.0
3
5
7
10
2
7
100
2
3
5
7
5
7
1000
2
VCE(sat) - I C
Cob - VCB
100
2
5
Collector Current, IC (mA)
Base to Emitter Voltage, VBE (V)
Output Capacitance, C ob (pF)
IB =0
70 80
60
h FE - I C
1000
800
1.0
50
Collector to Emitter Voltage, VCE (V)
IC - VBE
1000
40
3
5
7
100
2
Collector to Base Voltage, VCB (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10
IC/IB =10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
3
5
7
10
2
3
5
7
100
2
3
1000
Collector Current, I C (mA)
3
QW-R208-038,A
2
2SC3648
■
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
ASO
3
5
2
3
Collector Current, IC (A)
Gain-Bandwidth Product, f T (MHz)
fT - IC
VCE=10V
2
100
VCE=5V
7
5
3
7
5
1ms
Ic
10ms
100ms
3
2
0.17
DC Operation
5
3
Ta = 25℃
Single pulse
0.01 Mounted2on ceramic board
7
(250mm × 0.8mm)
5
2
3
1.0 2 3 5 7 10
2
2
10
1.0
Icp
5
7
10
2
3
5
7
100
2
3
5
7
1000
Collector Current, IC (mA)
5
7
100
2
3
Collectorto Emitter Voltage, VCE (V)
PC - Ta
Collector Dissipation, PC (W)
1.8
1.6
2
1.4
Mounted on ceramic board (250mm × 0.8mm)
1.2
1.0
0.8
0.6
No heat sink
0.4
0.2
0
0
20
40
60
80
100 120 140 160
Ambient Temperature, Ta (℃)
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R208-038,A