UNISONIC TECHNOLOGIES CO., 2SC3648 NPN EPITAXIAL SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS FEATURES 1 * High breakdown voltage and large current capacity * Fast switching speed * Over Current Protection Function SOT-89 *Pb-free plating product number: 2SC3648L PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Collector 3 Base ORDERING INFORMATION Order Number Normal Lead free 2SC3648-AB3-R 2SC3648L-AB3-R www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Package Packing SOT-89 Tape Reel 1 QW-R208-038,A 2SC3648 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) SYMBOL VCBO VCEO VEBO IC ICP PC (Mounted on ceramic board 250mm2 ×0.8mm) PC TJ TSTG Collector Dissipation Junction Temperature Storage Temperature RATINGS 180 160 6 0.7 1.5 UNIT V V V A A 1.3 W 500 150 -40 ~ +150 mW °C °C ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Collector Cutoff Curent Emitter Cutoff Curent SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Output Capacitance Cob hFE 1 hFE 2 tON tSTG tF DC Current Gain Turn-on Time Storage Time Fall Time Gain-Bandwidth Product ■ fT MIN TYP 0.12 0.85 MAX 0.4 1.2 180 160 6 0.1 0.1 8 100 90 UNIT V V V V V µA µA pF 400 50 1000 60 120 ns ns ns MHz CLASSIFICATION OF hFE 1 RANK RANGE ■ TEST CONDITIONS IC =250mA, IB =25mA IC =250mA, IB =25mA IC =10µA, IE =0 IC =1, RBE =∞ IE =10µA, IC=0 VCB =120V, IE =0 VEB =4V, IC =0 VCB =10V, f =1MHz VCE =5V, IC =100mA VCE =5V, IC =10mA See specified Test circuit See specified Test circuit See specified Test circuit VCE =5V, IC =50mA VCE(sat) VBE(sat) R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 SWITCHING TIME TEST CIRCUIT PW=20μS DC≤1% IB1 RB INPUT IB2 VR 333 50 + 100μ -5V + 470μ 100V 20I B1= -20IB2 =IC=300mA Unit (Resistance:Ω, Capacitance:F ) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R208-038,A 2SC3648 ■ NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS IC - VCE IC - VCE 1000 80mA 70mA 60mA 50mA 40mA 700 100mA 90mA 600 500 Collector Current, Ic (mA) Collector Current, Ic (mA) 800 30mA 400 20mA 300 10mA 200 800 4.0mA 3.5mA 3.0mA 600 2.5mA 2.0mA 400 1.5mA 200 1.0mA 100 0 0 200 400 600 IB =0 1000 800 0.5mA 0 0 Collector to Emitter Voltage, VCE (mV) 10 20 30 Pulse 7 5 DC Current Gain, hFE Collector Current, Ic (mA) VCE = 5V 600 400 3 2 100 VCE=2V VCE=5V VCE=10V 7 5 3 2 10 200 7 5 0 0 0.2 0.4 0.6 0.8 1.0 3 1.2 3 5 7 10 2 3 Collector-to-Emitter Saturation Voltage, VCE (sat) (V) F= 1MHZ 7 5 3 2 10 7 5 3 2 1.0 3 5 7 10 2 7 100 2 3 5 7 5 7 1000 2 VCE(sat) - I C Cob - VCB 100 2 5 Collector Current, IC (mA) Base to Emitter Voltage, VBE (V) Output Capacitance, C ob (pF) IB =0 70 80 60 h FE - I C 1000 800 1.0 50 Collector to Emitter Voltage, VCE (V) IC - VBE 1000 40 3 5 7 100 2 Collector to Base Voltage, VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 IC/IB =10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 3 5 7 10 2 3 5 7 100 2 3 1000 Collector Current, I C (mA) 3 QW-R208-038,A 2 2SC3648 ■ NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS(Cont.) ASO 3 5 2 3 Collector Current, IC (A) Gain-Bandwidth Product, f T (MHz) fT - IC VCE=10V 2 100 VCE=5V 7 5 3 7 5 1ms Ic 10ms 100ms 3 2 0.17 DC Operation 5 3 Ta = 25℃ Single pulse 0.01 Mounted2on ceramic board 7 (250mm × 0.8mm) 5 2 3 1.0 2 3 5 7 10 2 2 10 1.0 Icp 5 7 10 2 3 5 7 100 2 3 5 7 1000 Collector Current, IC (mA) 5 7 100 2 3 Collectorto Emitter Voltage, VCE (V) PC - Ta Collector Dissipation, PC (W) 1.8 1.6 2 1.4 Mounted on ceramic board (250mm × 0.8mm) 1.2 1.0 0.8 0.6 No heat sink 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta (℃) UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R208-038,A