UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 3 FEATURES * High Collector-Emitter voltage: VCEO=-300V(UTC PZTA92) VCEO=-200V(UTC PZTA93) *Collector Power Dissipation: Pc(max)=1000mW 4 SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) PARAMETER Collector-Base Voltage UTC PZTA92 UTC PZTA93 Collector-Emitter Voltage UTC PZTA92 UTC PZTA93 Emitter-Base Voltage Collector Power Dissipation Collector Current Junction Temperature Storage Temperature UTC SYMBOL VALUE VCBO -300 -200 VCEO -300 -200 -5 1000 -500 150 -55 ~ +150 UNIT V V VEBO Pc Ic Tj TSTG UNISONIC TECHNOLOGIES CO. LTD V mW mA °C °C 1 QW-R207-006,B UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage UTC PZTA92 UTC PZTA93 Collector-Emitter Breakdown Voltage UTC PZTA92 UTC PZTA93 Emitter-Base Breakdown Voltage Collector Cut-Off Current UTC PZTA92 UTC PZTA93 Emitter Cut-Off Current DC Current Gain(note) BVCBO Ic=-100µA,IE=0 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product VCE(sat)1 VBE(sat)1 fT BVCEO BVEBO ICBO IEBO hFE MIN TYP -300 -200 V -300 -200 -5 V Ic=-1mA,IB=0 IE=-100µA,Ic=0 VCB=-200V,IE=0 VCB=-160V,IE=0 VEB=-3V,Ic=0 VCE=-10V,Ic=-1mA VCE=-10V,Ic=-10mA VCE=-10V,Ic=-30mA Ic=-20mA,IB=-2mA Ic=-20mA,IB=-2mA VCE=-20V,Ic=-10mA, f=100MHz VCB=-20V,IE=0 f=1MHz V -0.25 -0.25 -0.10 µA -0.5 -0.90 V V MHz 6 8 pF µA 60 80 80 50 Collector Base Capacitance Ccb UTC PZTA92 UTC PZTA93 Note:Pulse test:PW<300µs,Duty Cycle<2%, VCE(SAT)1<200mV(Class SIN) UTC MAX UNIT UNISONIC TECHNOLOGIES CO. LTD 2 QW-R207-006,B UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 DC Current Gain Fig.2 Saturation Voltage 3 10 Ic=10*IB 2 10 1 10 0 10 0 -10 1 -10 2 -10 3 -10 VBE(sat) 2 -10 1 -10 2 -10 3 -10 Collector current, Ic(mA) Collector current, Ic(mA) Fig.4 Active-region safe operating area Fig.5 Current Gain Bandwidth product 3 -10 4 -10 CIB 1 10 CCB -1 -10 0 -10 1 -10 2 -10 Collector-Base voltage(V) ms s 0.1m C 1 .0 D 2 -10 MPSA93 MPSA92 1 -10 625mW Thermal limitation Ta=25°C bonding breakdown limitation Tj=150°C 0 -10 1 -10 2 -10 3 -10 Collector-Emitter voltage ( v) Current gain bandwidth product(MHz) 3 10 al m °C er 25 Th c= T 5W n 1. atio it lim Collector current, Ic(mA) 3 -10 1 -10 0 -10 4 -10 VCE(sat) CIB(pF),CCB(pF) VCE(sat),VBE(sat) (mV) DC current Gain,HFE VCE=-10V 1 -10 Fig.3 Capacitance 2 10 4 -10 VCE=-20V f=100MHz 2 10 1 10 0 -10 1 -10 2 -10 Collector current, Ic(mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R207-006,B