UTC-IC BCP68

UTC BCP68
NPN EPITAXIAL SILICON TRANSISTOR
NPN MEDIUM POWER
TRANSISTOR
FEATURES
* High current (max. 1 A)
* Low voltage (max. 20 V)
* Complementary to UTC BCP69
APPLICATIONS
* General purpose switching and amplification under high
current conditions.
1
SOT-223
1: BASE
2: COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage(Open Base)
Emitter-Base Voltage(Open Collector)
Collector Current (DC)
Peak Collector Current
Peak Base Current
Total Power Dissipation, Ta ≤ 25℃
Operating Ambient Temperature
Junction Temperature
Storage Temperature
SYMBOL
RATINGS
UNIT
VCBO
VCEO
VEBO
IC
ICM
IBM
32
20
5
1
2
200
V
V
V
A
A
mA
Ptot
Ta
Tj
Tstg
1.37
-65 ~ +150
150
-65 ~ +150
W
℃
℃
℃
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
RATINGS
UNIT
Thermal Resistance From Junction To Ambient
Rth j-a
Note 1
91
K/W
Thermal Resistance From Junction To Soldering Point
Rth j-s
10
K/W
Note 1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R207-008,B
UTC BCP68
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tj = 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
DC Current Gain
IEBO
hFE
DC Current Gain (BCP68-25)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCEsat
VBE
TEST CONDITIONS
MIN
TYP
IE = 0, VCB = 25V
IE = 0, VCB = 25V, Tj = 150℃
IC = 0, VEB =5V
IC = 5mA, VCE = 10V
IC = 500mA, VCE = 1V
IC = 1A, VCE = 1V
IC = 500mA, VCE = 1V
MAX
nA
10
100
µA
nA
50
85
60
375
160
375
500
IC = 1A, IB = 100mA
IC = 5mA, VCE = 10V
620
IC = 1A, VCE = 1V
1
Collector Capacitance
CC
IE = ie = 0, VCB = 5V, f = 1MHz
Transition Frequency
DC current gain ratio of the
complementary pairs
fT
hFE1
hFE2
IC = 10mA, VCE = 5V, f = 100MHz
|IC| = 0.5A, |VCE| = 1V
UNIT
100
38
mV
mV
V
pF
40
MHz
1.6
DC current gain (typical values)
300
VCE = 1V
250
hFE
200
150
100
50
0 -1
-10
1
102
10
103
104
IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R207-008,B