UTC BCP68 NPN EPITAXIAL SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR FEATURES * High current (max. 1 A) * Low voltage (max. 20 V) * Complementary to UTC BCP69 APPLICATIONS * General purpose switching and amplification under high current conditions. 1 SOT-223 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER Collector-Base Voltage (Open Emitter) Collector-Emitter Voltage(Open Base) Emitter-Base Voltage(Open Collector) Collector Current (DC) Peak Collector Current Peak Base Current Total Power Dissipation, Ta ≤ 25℃ Operating Ambient Temperature Junction Temperature Storage Temperature SYMBOL RATINGS UNIT VCBO VCEO VEBO IC ICM IBM 32 20 5 1 2 200 V V V A A mA Ptot Ta Tj Tstg 1.37 -65 ~ +150 150 -65 ~ +150 W ℃ ℃ ℃ THERMAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT Thermal Resistance From Junction To Ambient Rth j-a Note 1 91 K/W Thermal Resistance From Junction To Soldering Point Rth j-s 10 K/W Note 1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R207-008,B UTC BCP68 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Tj = 25℃, unless otherwise specified.) PARAMETER SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current DC Current Gain IEBO hFE DC Current Gain (BCP68-25) Collector-Emitter Saturation Voltage Base-Emitter Voltage VCEsat VBE TEST CONDITIONS MIN TYP IE = 0, VCB = 25V IE = 0, VCB = 25V, Tj = 150℃ IC = 0, VEB =5V IC = 5mA, VCE = 10V IC = 500mA, VCE = 1V IC = 1A, VCE = 1V IC = 500mA, VCE = 1V MAX nA 10 100 µA nA 50 85 60 375 160 375 500 IC = 1A, IB = 100mA IC = 5mA, VCE = 10V 620 IC = 1A, VCE = 1V 1 Collector Capacitance CC IE = ie = 0, VCB = 5V, f = 1MHz Transition Frequency DC current gain ratio of the complementary pairs fT hFE1 hFE2 IC = 10mA, VCE = 5V, f = 100MHz |IC| = 0.5A, |VCE| = 1V UNIT 100 38 mV mV V pF 40 MHz 1.6 DC current gain (typical values) 300 VCE = 1V 250 hFE 200 150 100 50 0 -1 -10 1 102 10 103 104 IC (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R207-008,B