UTC-IC 2SC3834

UTC 2SC3834
NPN EPITAXIAL SILICON TRANSISTOR
SWITCH NPN TRANSISTOR
DESCRIPTION
The UTC 2SC3834 is an epitaxial planar type NPN silicon
transistor.
APLLICATION
1
*Humidifier,DC-DC converter,and general purpose.
TO-220
1: BASE
2:COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current (PULSE)
Collector Power Dissipation( Tc=25°C )
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IB
Ic
Pc
Tj
TSTG
200
120
8
3
7
50
150
-55 ~ +150
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
BVCEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
TEST CONDITIONS
MIN
Ic= 50mA
VCB=200V, IE=0
VEB= 8V, Ic =0
VCE= 4V,Ic= 3A
Ic=3A ,IB=0.3A
Ic=3A ,IB=0.3A
VCE=12V,IE=-0.5mA,f=100MHz
VCB= 10V, IE= 0 A,f=1MHz
TYP
MAX
120
100
100
220
0.5
1.2
70
30
110
UNIT
V
μA
μA
V
V
MHz
pF
TYPE SWITCHING CHARACTERISTCS (Common Emitter)
Vcc(V)
RL(Ω)
Ic (A)
VBB1(V)
VBB2(V)
IB1(A)
IB2(A)
Ton(μA)
Tstg(μA)
Tf (μA)
50
16.7
3
10
-5
0.3
-0.6
0.5(max)
3.0(max)
0.5(max)
CO. LTD
1
UTC
UNISONIC TECHNOLOGIES
QW-R203-026,A
UTC 2SC3834
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS CURVES
2
IB=10mA
1
0
0
0.005 0.01
0
1
2
3
4
Collector-Emitter Voltage V CE(V)
DC Current Gain H FE
200.0
2
25℃
0.
1
0.5
1
5 7
-30℃
50
20
0.01
Collector Current IC(A)
0.05 0.1
0.5
1
5
Safe Operating Area (Single Pulse)
fT–IE Characteristics (Typical)
20
10
VCE=12V
0m
s
0.3
Time t(ms)
Without Healstink
Natural Cooling
0.1
0.05
5
10
50
120
200
Collect-Emitter Voltage Vc E(V)
UNISONIC TECHNOLOGIES
40
30
k
0.5
Pc –Ta Derating
50
n
tsi
-5
1
1000
100
10
1
a
He
UTC
0.5
ite
Emitter Current IE(A)
1
f in
-1
7
θj-a–t Characteristics
4
In
-0.5
1.0 1.1
ith
-0.05 -0.1
0.5
W
10
ms
20
5
10
Collector Current Ic (A)
10
0
-0.01
0
Collector Current IC(A)
30
Cut- off Frequency f T (M H Z)
125℃
VCE=4V
100
50
1
Base-Emittor Voltage V BE(V)
M axim um Pow er Dissipation Pc (W )
DC Current Gain H FE
Typ
100
2
0
1
HFE-Ic Temperature
Characteristics (Typical)
300
VCE=4V
0.5
0.1
3
Base Current IB(A)
HFE-IC Characteristics (Typical)
200
0.05
4
Temp)
1
5A
3
3A
20mA
- 30℃
(C ase
40mA
ase
Tem
p)
se T
e mp
)
4
5
℃ (C
60mA
(Ca
5
6
2
1 25
A
100m
A
Collector Current Ic (A)
6
7
Collector Current Ic (A)
A
150m
Transient Thermal Resistance θj-a (C/W )
A
200m
IC = 1
Collector-Em itter Saturation
Voltage V CE (sat) (V)
7
IC-VBE Temperature
Characteristics (Typical)
V CE(sat)-IB Characteristics (Typical)
25 ℃
Ic-V CE Characteristics(Typical)
20
10
2
0
WithoutHeatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(℃)
CO. LTD
2
QW-R203-026,A
UTC 2SC3834
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
3
QW-R203-026,A