UTC-IC MMBT5088

UTC MMBT5088 / MMBT5089
NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The device is designed for low noise, high gain, general
purpose amplifier applications at collector currents from
1µA to 50mA.
2
MARKING(MMBT5088)
1
1Q
3
MARKING(MMBT5089)
SOT-23
1R
1:EMITTER
2:BASE
3:COLLECTOR
MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
RATING
SYMBOL
MMBT5088 MMBT5089
UNIT
Collector-Emitter voltage
VCEO
30
25
V
Collector-Base voltage
VCBO
35
30
V
Emitter-base voltage
VEBO
4.5
V
Collector current-continuous
Ic
100
mA
Operating and Storage
Tj, Tstg
-55 ~ +150
°C
Junction Temperature Range
Note 1: These ratings are based on a maximum junction temperature of 150 degrees C.
Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
MAX
UNIT
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to
Ambient
PD
350
2.8
357
mW
mW/°C
°C/W
UTC
RθJA
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R206-033,A
UTC MMBT5088 / MMBT5089
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(note)
MMBT5088
MMBT5089
Collector-Base Breakdown Voltage
MMBT5088
MMBT5089
Collector Cut-Off Current
MMBT5088
MMBT5089
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
SYMBOL
V(BR)CEO
V(BR)CBO
TEST CONDITIONS
MAX
UNIT
IC=1.0mA, IB=0
30
25
V
V
35
30
V
V
IC=100µA, IE=0
ICBO
VCB=20V, IE=0
VCB=15V, IE=0
50
50
nA
nA
VEB=3.0V, IC=0
VEB=4.5V, IC=0
50
100
nA
nA
IEBO
hFE
VCE=5.0V, IC=100µA
MMBT5088
MMBT5089
VCE=5.0V, IC=1.0mA
MMBT5088
MMBT5089
VCE=5.0V, IC=10mA (note)
MMBT5088
MMBT5089
IC=10mA, IB=1.0mA
IC=10mA, VCE=5.0V
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter On Voltage
VBE(on)
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
VCE=5.0mA, Ic=500µA, f=20MHz
Collector-Base Capacitance
Ccb
VCB=5.0V, IE=0, f=100kHz
Emitter-Base Capacitance
Ceb
VEB=0.5V, Ic=0, f=100kHz
Small-Signal Current Gain
hFE
VCE=5.0V, Ic=1.0mA, f=1.0kHz
MMBT5088
MMBT5089
Noise Figure
NF
VCE=5.0V, Ic=100µA, Rs=10kΩ,
MMBT5088
f=10kHz to 15.7kHz
MMBT5089
Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%.
UTC
MIN
300
400
900
1200
350
450
300
400
0.5
0.8
V
V
4
10
MHz
pF
pF
50
350
450
1400
1800
3.0
2.0
UNISONIC TECHNOLOGIES CO., LTD.
dB
dB
2
QW-R206-033,A
UTC MMBT5088 / MMBT5089
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R206-033,A
UTC MMBT5088 / MMBT5089
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R206-033,A
UTC MMBT5088 / MMBT5089
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R206-033,A
UTC MMBT5088 / MMBT5089
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
6
QW-R206-033,A