UTC US108S/N SCR SCRs DESCRIPTION The UTC US108S/N is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits. 1 TO-220 1: CATHODE 2: ANODE 3: GATE ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages US108S/N-4 US108S/N-6 US108S/N-8 RMS on-state current (180° conduction angle) (Tc = 110°C) Average on-state current (180° conduction angle) (Tc = 110°C) Non repetitive surge peak on-state current (Tj = 25°C) tp=8.3ms tp=10ms I²t Value for fusing (tp = 10 ms ,Tj = 25°C) Critical rate of rise of on-state current (IG = 2 x IGT , tr ≤ 100 n s, Tj = 125°C, F = 60 Hz) Peak gate current (tp=20µs, Tj = 125°C) Maximum peak reverse gate voltage Average gate power dissipation (Tj = 125°C) Storage junction temperature range Operating junction temperature range UTC SYMBOL RATING US108S US108N VDRM VRRM 400 600 800 8 5 IT(RMS) IT(AV) ITSM I²t 73 70 24.5 V A A 100 95 45 dI/dt 50 IGM VRGM PG(AV) Tstg Tj 4 UNIT A A²S A/µs 5 1 -40 ~ +150 -40 ~ +125 UNISONIC TECHNOLOGIES CO., LTD. A V W °C °C 1 QW-R301-012,B UTC US108S/N SCR UTC US108S(SENSITIVE) ELECTRICAL CHARACTERISTICS (Tj=25℃unless otherwise specified) IGT VD = 12 V, RL =140Ω MAX. 200 UNIT Gate trigger Current Gate trigger Voltage VGT VD = 12 V, RL=140Ω 0.8 V Gate non-trigger voltage VGD VD = VDRM, RL = 3.3 kΩ, RGK = 220Ω V VRG IH Tj = 125°C IRG = 10 µA IT = 50 mA, RGK = 1 kΩ 0.1 Reverse gate voltage Holding Current 8 5 V mA Latching Current Circuit Rate Of Change Of off-state Voltage IL dV/dt 6 mA PARAMETER SYMBOL TEST CONDITIONS IG = 1 mA ,RGK = 1 kΩ VD = 65 % VDRM ,RGK = 220 Ω Tj = 125°C On-state voltage VTM Threshold Voltage Dynamic Resistance Vt0 Rd Off-state Leakage Current IDRM IRRM MIN 5 µA V/µs ITM = 16A, tp = 380 µs 1.6 V 0.85 46 V mΩ 5 1 µA mA MAX. 15 UNIT 1.3 V 30 70 mA mA Tj = 25°C Tj = 125°C Tj = 125°C VDRM = VRRM, RGK = 220 Ω Tj = 25°C Tj = 125°C UTC US108N(STANDARD) ELECTRICAL CHARACTERISTICS (Tj=25℃unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Gate trigger Current Gate trigger Voltage IGT VD = 12 V, RL =33Ω VGT VD = 12 V, RL=33Ω Gate non-trigger voltage VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125°C Holding Current Latching Current Circuit Rate Of Change Of off-state Voltage IH IL dV/dt IT = 100 mA, Gate open IG = 1.2 IGT VD = 67 % VDRM , Gate open,Tj = 125°C On-state voltage VTM Vt0 Rd Threshold Voltage Dynamic Resistance Off-state Leakage Current IDRM IRRM MIN 2 0.2 mA V 150 ITM = 16A, tp = 380 µs, Tj = 25°C Tj = 125°C Tj = 125°C VDRM = VRRM Tj = 25°C Tj = 125°C V/µs 1.6 0.85 46 V V mΩ 5 2 µA mA THERMAL RESISTANCES PARAMETER Junction to case (DC) Junction to ambient (DC) UTC SYMBOL Rth(j-c) Rth(j-a) VALUE UNIT 20 K/W K/W 60 UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R301-012,B UTC US108S/N SCR Fig.1:Maximum average power dissipation vs average on-state current Figure.2:Average and D.C. on-state current vs case temperature p(w) 8 9.0 α=180° 7 DC 8.0 6 7.0 5 6.0 4 α=180° 5.0 3 360° 2 1 0 IT(av)(A) 10.0 4.0 3.0 IT(av)(A) 1 0 2 3 α 4 2.0 5 6 1.0 Tcase(℃) 0.0 0 Figure.3: Relative variation of thermal impedance junctio to case vs pulse duration 25 50 75 125 100 Figure.4:Relative variation of gate trigger current,holding current and latching vs junction temperature .(US108S) 2.0 K=[Zth(j-c)/Rth(j-c)] 1.0 IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃) 1.8 1.6 IGT 1.4 1.2 0.5 IH&IL Rgk=1kΩ 1.0 0.8 0.6 0.2 0.4 0.2 tp(s) 0.1 1E-3 1E-2 1E+0 1E-1 Figure.4-2:Relative variation of gate trigger current,holding current and latching vs junction temperature .(US108N) 2.4 Tj(℃) 0.0 -40 -20 0 20 40 60 80 100 120 140 Figure.5:Relative variation of holding current vs gatecathode resistance(typical values) (US108S) IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃) 2.2 2.0 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 IGT 1.8 1.6 1.4 1.2 1.0 0.8 IH&IL 0.6 0.4 Tj(℃) 0.2 0.0 -40 -20 UTC 0 20 40 60 80 100 120 140 IH(Rgk)/IH(Rgk=1kΩ) 1E-2 TJ=25℃ Rgk(kΩ) 1E-1 1E+0 UNISONIC TECHNOLOGIES CO., LTD. 1E+1 3 QW-R301-012,B UTC US108S/N SCR Fig.6: Relative variation of dV/dt immunity vs gatecathode resistance(typical values) (US108S) 10.00 Fig.7: Relative variation of dV/dt immunity vs gatecathode resistance(typical values) (US108S) dV/dt(Rgk)/dV/dt(Rgk=220Ω) 15.0 Tj=125℃ VD=0.67* VDRM 12.5 1.00 dV/dt(Cgk)/dV/dt(Rgk=220Ω) Tj=125℃ VD=0.67* VDRM Rgk=220Ω 10.0 7.5 0.10 5.0 2.5 Rgk(Ω) 0.01 0 0.0 600 800 1000 1200 1400 1600 1800 2000 200 400 ITSM(A) 90 US108N 80 60 80 100 120 140 160 180 200 220 Fig.9:Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding 2 values of I t. 2 2 ITSM(A),I t(A s) 1000 Tjinitial=25℃ Figure.8: Surge peak on-state current vs number of cycles. 100 Cgk(nF) 0 20 40 tp=10ms One cycle 70 Non repetitive Tj Iinitial=25℃ 60 50 100 US108S 40 US108S US108N Repetitive Tcase=110℃ 30 I2 t 20 10 1 US108S tp(ms) Number of cycles 0 US108N ITSM dI/dt limitation 1000 100 10 10 0.01 0.10 1.00 10.00 Fig.10: On-state characteristics(maximum values). 50.0 ITM(A) 10.0 Tj=max: Vto=0.85V Rd=46mΩ Tj=Tjmax. Tj=25℃ 1.0 0.1 0.0 UTC VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R301-012,B UTC US108S/N SCR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R301-012,B