FREESCALE MRF7S38075HR3

Freescale Semiconductor
Technical Data
Document Number: MRF7S38075H
Rev. 0, 8/2007
RF Power Field Effect Transistors
MRF7S38075HR3
MRF7S38075HSR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical WiMAX Performance: VDD = 30 Volts, IDQ = 900 mA, Pout =
12 Watts Avg., f = 3400 and 3600 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7
MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 14 dB
Drain Efficiency — 14%
Device Output Signal PAR — 8.7 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 75 Watts CW
Peak Tuned Output Power
• Pout @ 1 dB Compression Point w 75 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
3400 - 3600 MHz, 12 W AVG., 30 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S38075HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S38075HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 86°C, 74 W CW
Case Temperature 69°C, 12 W CW
RθJC
0.46
0.49
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 248 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 30 Vdc, ID = 900 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.3 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.77
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
464
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
214
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 900 mA, Pout = 12 W Avg., f = 3400 MHz and f =
3600 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Power Gain
Gps
12
14
17
dB
Drain Efficiency
ηD
12
14
24
%
PAR
7.5
8.7
—
dB
ACPR
—
- 49
- 46
dBc
IRL
—
- 12
-5
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(continued)
MRF7S38075HR3 MRF7S38075HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 900 mA, Pout = 12 W Avg.,
f = 3400 MHz and f = 3600 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ Pout = 32 W Avg.
Mask
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
dBc
—
—
—
—
—
- 27
- 38
- 42
- 60
- 60
—
—
—
—
—
Relative Constellation Error @ Pout = 12 W Avg. (1)
RCE
—
- 34
—
dB
(1)
EVM
—
2.1
—
% rms
Error Vector Magnitude
(Typical EVM Performance @ Pout = 12 W Avg. with OFDM 802.16d
Signal Call)
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 900 mA, 3400 - 3600 MHz Bandwidth
Video Bandwidth @ 84 W PEP Pout where IM3 = - 30 dBc
VBW
(Tone Spacing from 100 kHz to VBW)
—
20
—
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
MHz
Gain Flatness in 200 MHz Bandwidth @ Pout = 12 W Avg.
GF
—
0.36
—
dB
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ Pout = 75 W CW
Φ
—
3.21
—
°
Delay
—
2.38
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 75 W CW,
f = 3500 MHz, Six Sigma Window
ΔΦ
—
63.4
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.025
—
dB/°C
ΔP1dB
—
0.026
—
dBm/°C
Average Group Delay @ Pout = 75 W CW, f = 3500 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
1. RCE = 20Log(EVM/100)
MRF7S38075HR3 MRF7S38075HSR3
RF Device Data
Freescale Semiconductor
3
B2
VSUPPLY
Z13 Z12
B1
VBIAS
+
C5
C12
C6
R1
C3
C2
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
C8
+
+
C9
C10
C11
Z14
Z15
Z11
RF
INPUT Z1
C7
+
Z16
Z17
Z18
Z19
Z20
Z21
Z22
RF
OUTPUT
C4
Z10
DUT
0.427″ x 0.084” Microstrip
0.066″ x 0.192″ x 0.084″ Taper
0.045″ x 0.192″ Microstrip
0.044″ x 0.310″ Microstrip
0.150″ x 0.430″ Microstrip
0.107″ x 0.240″ Microstrip
0.155″ x 0.400″ Microstrip
0.943″ x 0.084″ Microstrip
0.158″ x 0.600″ Microstrip
0.110″ x 0.600″ Microstrip
0.802″ x 0.150″ Microstrip
0.150″ x 0.155″ Microstrip
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
PCB
0.358″ x 0.150″ Microstrip
0.541″ x 0.070″ Microstrip
0.911″ x 0.560″ Microstrip
0.379″ x 0.560″ Microstrip
0.300″ x 0.084″ Microstrip
0.200″ x 0.240″ Microstrip
0.047″ x 0.240″ x 0.140″ Taper
0.463″ x 0.084″ Microstrip
0.089″ x 0.142″ Microstrip
0.657″ x 0.084″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF7S38075HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S38075HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Small Ferrite Beads
2743019447
Fair Rite
C1, C2, C4, C6
2.7 pF Chip Capacitors
ATC100B2R7BT500XT
ATC
C3, C7
100 pF Chip Capacitors
ATC100B101FT500XT
ATC
C5
22 μF, 35 V Electrolytic Capacitor
EMVY350ADA221MHA0G
Nippon Chemi - Con
C9
100 μF, 50 V Electrolytic Capacitor
MCHT101M1HB - 1017 - RF
Multicomp
C10, C11
470 μF, 63 V Electrolytic Capacitors
EKME630ELL471MK25S
Multicomp
C12, C8
0.01 μF, 50 V Chip Capacitors
C1825C103J5RAC
Kemet
R1
180 kΩ, 1/4 W Chip Resistor
CRCW12061803FKEA
Vishay
MRF7S38075HR3 MRF7S38075HSR3
4
RF Device Data
Freescale Semiconductor
C5
C3
C10
B1
C7
C2
C8
C9
C6
C12
R1
B2
C11
CUT OUT AREA
C1
C4
MRF7S38705 Rev. C
Figure 2. MRF7S38075HR3(HSR3) Test Circuit Component Layout
MRF7S38075HR3 MRF7S38075HSR3
RF Device Data
Freescale Semiconductor
5
16
Gps, POWER GAIN (dB)
14
VDD = 30 Vdc, Pout = 12 W (Avg.), IDQ = 900 mA, 802.16d
64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
14.5
14
Gps
13.5
IRL
13
12.5
12
3450
3475
−47
−8
−49
−12
−53
ACPR −L
3425
10
−51
ACPR−U
11.5
3400
12
3500
3525
3550
−55
3600
3575
−16
−20
−24
IRL, INPUT RETURN LOSS (dB)
ηD
15
ACPR (dBc)
15.5
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
15
24
ηD
22
20
14
13
18
VDD = 30 Vdc, Pout = 23 W (Avg.), IDQ = 900 mA, 802.16d
64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
12.5
IRL
12
−38
−8
−40
−12
−42
ACPR −L
11.5
−44
−16
−20
ACPR−U
11
3400
3425
3450
3475
3500
3525
3550
3575
−46
3600
−24
IRL, INPUT RETURN LOSS (dB)
13.5
Gps
ACPR (dBc)
Gps, POWER GAIN (dB)
14.5
ηD, DRAIN
EFFICIENCY (%)
Figure 3. WiMAX Broadband Performance @ Pout = 12 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ Pout = 23 Watts Avg.
16
−10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1350 mA
15
Gps, POWER GAIN (dB)
1125 mA
14
900 mA
13
12
11
675 mA
450 mA
VDD = 30 Vdc, IDQ = 900 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
10
9
VDD = 30 Vdc, IDQ = 900 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
−20
IDQ = 450 mA
−30
675 mA
−40
1125 mA
900 mA
1350 mA
−50
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
200
1
100
10
200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S38075HR3 MRF7S38075HSR3
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 30 Vdc, IDQ =900 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
−20
−30
3rd Order
−40
5th Order
−50
−60
7th Order
−70
1
10
100
0
VDD = 30 Vdc, Pout = 84 W (PEP), IDQ = 900 mA
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 3500 MHz
−10
−20
IM3 −L
−30
IM3 −U
−40
IM5 −U
IM5 −L
−50 IM7 −U
IM7 −L
−60
1
200
100
10
TWO −TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
35
−25
VDD = 30 Vdc, IDQ = 900 mA
f = 3500 MHz, 802.16d, 64 QAM 3/4
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
30
25
ηD
−30
−35
ACPR
20
−40
Gps
15
−45
10
−50
5
−55
−60
100
0
1
ACPR (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
10
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
17
Gps
85_C
25_C
40
35
30
14
85_C
13
25
12
20
11
15
10
ηD
9
10
VDD = 30 Vdc
IDQ = 900 mA
f = 3500 MHz
8
1
10
13
Gps, POWER GAIN (dB)
15
25_C
ηD, DRAIN EFFICIENCY (%)
16
Gps, POWER GAIN (dB)
14
45
−30_C
TC = −30_C
12
32 V
11
30 V
10
IDQ = 900 mA
f = 3500 MHz
5
100
0
200
VDD = 28 V
9
0
40
80
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
120
MRF7S38075HR3 MRF7S38075HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
109
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 30 Vdc, Pout = 12 W Avg., and ηD = 14%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 12. MTTF versus Junction Temperature
WiMAX TEST SIGNAL
100
−10
7 MHz
Channel BW
−20
10
−40
−50
0.1
(dB)
PROBABILITY (%)
Compressed Output
Signal @ 12 W Avg. Pout
1
System Type G
−30
Input Signal
0.01
−70
802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz
Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
0.001
0.0001
0
2
4
−60
−80
Point B
Point C
−90
6
8
PEAK −TO−AVERAGE (dB)
Figure 13. OFDM 802.16d Test Signal
10
Point B
Point C
−100 Point D
Point D
−110
−9
−7.2 −5.4
−3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. WiMAX Spectrum Mask Specifications
MRF7S38075HR3 MRF7S38075HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 25 Ω
Zsource
f = 3400 MHz
f = 3600 MHz
f = 3600 MHz
Zload
f = 3400 MHz
VDD = 30 Vdc, IDQ = 900 mA, Pout = 12 W Avg.
f
MHz
Zsource
W
Zload
W
3400
20.70 + j14.63
5.63 - j5.17
3425
20.22 + j12.38
5.44 - j5.10
3450
19.02 + j10.82
5.23 - j4.97
3475
17.58 + j9.95
4.98 - j4.83
3500
16.28 + j9.46
4.73 - j4.66
3525
14.97 + j9.47
4.50 - j4.50
3550
13.94 + j9.49
4.22 - j4.33
3575
13.11 + j9.66
3.97 - j4.13
3600
12.45 + j9.98
3.73 - j3.89
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF7S38075HR3 MRF7S38075HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
T A
M
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
M
B
M
M
R
(INSULATOR)
bbb
N
T A
M
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
S
(LID)
ccc
H
T A
M
M
B
(LID)
B
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF7S38075H
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF7S38075HS
MRF7S38075HR3 MRF7S38075HSR3
10
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Aug. 2007
Description
• Initial Release of Data Sheet
MRF7S38075HR3 MRF7S38075HSR3
RF Device Data
Freescale Semiconductor
11
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MRF7S38075HR3 MRF7S38075HSR3
Document Number: MRF7S38075H
Rev. 0, 8/2007
12
RF Device Data
Freescale Semiconductor