PRODUCT: ZEN056V230A16CE PolyZen Polymer Enhanced Zener Diode Micro-Assemblies Over-Voltage Circuit Protection Products DOCUMENT: SCD28237 REV LETTER: A REV DATE: JUNE 06, 2012 PAGE NO.: 1 OF 8 Specification Status: RELEASED GENERAL DESCRIPTION BENEFITS TE Circuit Protection PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies. They offer resettable protection against multi-Watt fault events without the need for multi-Watt heat sinks. The Zener diode used for voltage clamping in a PolyZen micro-assembly was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and diode currents are large. An advanced feature of the PolyZen micro-assembly is that the Zener diode is thermally coupled to a resistively non-linear, polymer PTC (positive temperature coefficient) layer. This PTC layer is fully integrated into the device, and is electrically in series between VIN and the diode clamped VOUT. This advanced PTC layer responds to either extended diode heating or overcurrent events by transitioning from a low to high resistance state, also known as ”tripping”. A tripped PTC will limit current and generate voltage drop. It helps to protect both the Zener diode and the follow-on electronics and effectively increases the diode’s power handling capability. The polymer enhanced Zener diode helps protect sensitive portable electronics from damage caused by inductive voltage spikes, voltage transients, incorrect power supplies and reverse bias. These devices are particularly suitable for portable electronics and other low-power DC devices. Stable Zener diode helps shield downstream electronics from overvoltage and reverse bias Trip events shut out overvoltage and reverse bias sources Analog nature of trip events minimizes upstream inductive spikes Minimal power dissipation requirements Single component placement FEATURES Overvoltage transient suppression Stable VZ vs fault current Time delayed, overvoltage trip Time delayed, reverse bias trip Multi-Watt power handling capability Integrated device construction RoHS Compliant TARGET APPLICATIONS DC power port protection in portable electronics DC power port protection for systems using barrel jacks for power input Internal overvoltage & transient suppression DC output voltage regulation Tablet PCs and portable electronics TYPICAL APPLICATION BLOCK DIAGRAM Power Supply PolyZen Protected Electronics (External or Internal) 2 VIN + 1 PolyZen Device GND VOUT 3 Regulated Output RLoad Protected downstream electronics PRODUCT: ZEN056V230A16CE PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD28237 REV LETTER: A REV DATE: JUNE 06, 2012 PAGE NO.: 2 OF 8 Over-Voltage Circuit Protection Products CONFIGURATION INFORMATION Pin Configuration (Top View) Block Diagram 2 GND 1 Polymer PTC VIN 1 VIN VOUT Zener Diode 3 V2OUT GND PIN DESCRIPTION Pin Number 1 2 3 Pin Name VIN GND VOUT Pin Function VIN . Protected input to Zener diode GND VOUT . Zener regulated voltage output MECHANICAL DIMMENSIONS Length Width Height Dimension L W H （A） B(2X) C T(2X) Min Typ (mm) Max 4.8 3.8 0.8 0.7 0.9 3.9 0.1 5.0 4.0 1.0 0.8 1.0 4.05 0.2 5.2 4.2 1.2 0.9 1.1 4.2 0.3 PRODUCT: ZEN056V230A16CE PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD28237 REV LETTER: A REV DATE: JUNE 06, 2012 PAGE NO.: 3 OF 8 Over-Voltage Circuit Protection Products DEFINITION of TERMS IOUT IPTC, IHOLD IPTC IFLT IOUT Trip Event Trip Endurance Current flowing through the PTC portion of the circuit RMS fault current flowing through the diode Current flowing out the VOUT pin of the device A condition where the PTC transitions to a high resistance state, thereby significantly limiting IPTC and related currents. Time the PTC portion of the device remains in a high resistance state. VIN VOUT IFLT GND GENERAL SPECIFICATIONS Operating Temperature Storage Temperature -40º to +85ºC -40º to +85ºC TYPICAL ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified) V Z4 (V) Izt4 (A) Min Typ Max 5.45 5.60 5.75 Note 1: Note 2: V Int Max8 Leakage Current 0.1 IHOLD5 (A) @ 20oC 2.3 IFLT Max9 Tripped Pow er Dissipation10 R1Max7 RTyp6 Test Max Test Test Test (Ohm s) (Ohm s) V INT Max I Max Pow er Voltage Current Current FLT Voltage Voltage (V) (A) (W) (V) (m A) (A) (V) (V) 5.25 10.0 0.032 0.060 16 5 +5 -40 +16 -12 1 16 Electrical characteristics determined at 25ºC unless otherwise specified. This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact TE Connectivity Circuit Protection Division directly. Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in your application may vary. Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request. Note 5: IHOLD: Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip event at the specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently low so as to prevent the diode from acting as a heat source. Testing is conducted with an “open” Zener. Note 6: R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature. Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after first tripped event or after reflow soldering. Note 8: VINT Max: VINT Max is defined as the voltage at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles and 24 hours trip endurance at the specified voltage and current (IPTC). VINT Max testing is conducted using a "shorted" load (VOUT = 0 V). VINT Max is a survivability rating, not a performance rating. For performance ratings, see Note 2. Note 9: IFLT Max: Maximum RMS fault current the diode portion of the device can withstand and remain resettable. Specification is dependent on the direction of current flow through the diode. RMS fault currents above IFLT Max may permanently damage the PolyZen device. Specification assumes IOUT = 0. Testing conducted with no load connected to VOUT. Note 10: The power dissipated by the device when in the “tripped” state, as measured on TE test boards (see note 3). Note 11: Specifications based on limited qualification data and subject to change. PolyZen Polymer Enhanced Zener Diode Micro-Assemblies Over-Voltage Circuit Protection Products TYPICAL DEVICE CHARACTERISTICS PRODUCT: ZEN056V230A16CE DOCUMENT: SCD28237 REV LETTER: A REV DATE: JUNE 06, 2012 PAGE NO.: 4 OF 8 PolyZen Polymer Enhanced Zener Diode Micro-Assemblies Over-Voltage Circuit Protection Products PRODUCT: ZEN056V230A16CE DOCUMENT: SCD28237 REV LETTER: A REV DATE: JUNE 06, 2012 PAGE NO.: 5 OF 8 PRODUCT: ZEN056V230A16CE PolyZen Polymer Enhanced Zener Diode Micro-Assemblies Over-Voltage Circuit Protection Products RECOMMENDED PAD LAYOUT (mm) RECOMMENDED SOLDER STENCIL (mm) Solder thickness – 0.15mm RECOMMENDED SOLDER REFLOW PROFILE Classification Reflow Profiles Profile Feature Pb-Free Assembly Average Ramp-up Rate (Ts Max to Tp) 3° C/second max Average Ramp-down Rate (Tp to T L ) 6° C/second max Preheat • Temperature Min (Ts Min) 150° C • Temperature Max (Ts Max) 200° C • Time (ts Preheat) 60-180 seconds Time maintained above: • Temperature (T L ) 217° C • Time (t L ) 60-150 seconds Peak / Classification Temperature • Temperature (T p) DOCUMENT: SCD28237 REV LETTER: A REV DATE: JUNE 06, 2012 PAGE NO.: 6 OF 8 260° C Time within 5° C of actual peak • Time (t p) 20-40 seconds Time 25° C to peak Temperature 8 minutes max PRODUCT: ZEN056V230A16CE PolyZen Polymer Enhanced Zener Diode Micro-Assemblies Over-Voltage Circuit Protection Products DOCUMENT: SCD28237 REV LETTER: A REV DATE: JUNE 06, 2012 PAGE NO.: 7 OF 8 PACKAGING Packaging Tape & Reel Standard Box ZEN056V230A16CE 4,000 20,000 REEL DIMENSION Matte Finish These Area Nmin Amax Amax = 330 Nmin = 102 W1 = 8.4 W2 = 11.1 TAPE DIMENSION PRODUCT: ZEN056V230A16CE PolyZen Polymer Enhanced Zener Diode Micro-Assemblies Over-Voltage Circuit Protection Products DOCUMENT: SCD28237 REV LETTER: A REV DATE: JUNE 06, 2012 PAGE NO.: 8 OF 8 DEVICE MARKINGS INFORMATION MATERIALS INFORMATION ROHS Compliant ELV Compliant Halogen Free* HF * Halogen Free refers to: Br≤900ppm, Cl≤900ppm, Br+Cl≤1500ppm. All information, including illustrations, is believed to be accurate and reliable. Users, however, should independently evaluate the suitability of and test each product selected for their application. Tyco Electronics Corporation and/or its Affiliates in the TE Connectivity Ltd. family of companies (“TE”) makes no warranties as to the accuracy or completeness of the information, and disclaims any liability regarding its use. TE’s only obligations are those in the TE Standard Terms and Conditions of Sale and in no case will TE be liable for any incidental, indirect, or consequential damages arising from the sale, resale, use, or misuse of its products. Specifications are subject to change without notice. In addition, TE reserves the right to make changes to materials or processing that do not affect compliance with any applicable specification without notification to Buyer. Without express written consent by an officer of TE, TE does not authorize the use of any of its products as components in nuclear facility applications, aerospace, or in critical life support devices or systems. © 2012 Tyco Electronics Corporation, a TE Connectivity Ltd. company. All rights reserved.