Preliminary Data Sheet PD166011T1J R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 INTELLIGENT POWER DEVICE 1. 1.1 Overview Description Dual N-channel high-side switch with charge pump, diagnostic feedback with load current sense and embedded protection functions. 1.2 Features Built-in charge pump Low on-state resistance Short circuit protection Shutdown by over current detection and over load detection Over temperature protection Shutdown with auto-restart on cooling Built-in diagnostic function Proportional load current sensing Defined fault signal in case of abnormal load condition Loss of ground protection Under voltage lock out Active clamp operation at inductive load switch off AEC Qualified RoHS compliant with pure tin plating 1.3 Application Light bulb (~55 W) switching Switching of all types of 14 V DC grounded loads, such as LED, inductor, resistor and capacitor 2. Ordering Information Part No. PD166011T1J-E1-AY *1 Note: Lead Plating Pure Mate Sn Packing Tape 1500 p/reel Package 12-pin Power HSSOP (PRSP0013FA-A) *1 Pb-free (This product does not contain Pb in the external electrode) Note: The information contained in this document is the one that was obtained when the document was issued, and may be subject to change. R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 1 of 26 PD166011T1J 3. Preliminary Specification 3.1 Block Diagram Charge pump Internal power supply Current detector Dynamic clamp Output voltage sense Current sense IN1 ESD protection SEN Sense enable ISEN VIN1 Control logic Power supply voltage sense IIN1 ICC VCC Channel 1 Von1 OUT1 Fault signal output VSEN IL1 ESD protection IIS1 IS1 VCC Temperature sensor VOUT1 IL2 Channel 2 IN2 Equivalent to channel 1 Control / Protection circuit and Output MOS Load OUT2 IIS2 VIN2 VIS1 VOUT2 IS2 RIS RGND VIS2 Load GND RIS IGND OUT2 OUT2 SEN OUT1 12 11 10 9 8 7 4 5 6 IN2 3 VCC 2 IS2 1 IS1 Tab IN1 Tab GND VCC OUT1 Pin Arrangement VCC 3.2 VCC (Top view) 3.2.1 Pin Name GND INn ISn SEN OUTn VCC Pin Function Pin Function Ground connection Input signal for channel n (n = 1 to 2) Recommended Connection Connected to GND Connected to MCU port through 2 k-10 k serial resistor Current sense and Diagnosis output signal channel n (n = 1 to 2) Sense enable input Connected to GND through a 2 k-5 k resistor Protected high-side power output channel n (n = 1 to 2) Connected to load with small 50-100 nF capacitor in parallel Positive power supply for logic supply as well as output power supply Connected to battery voltage with small 100 nF capacitor in parallel R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Connected to MCU port through 2 k-10 k serial resistor Page 2 of 26 PD166011T1J 3.3 Preliminary Absolute Maximum Ratings (TA = 25°C, unless otherwise specified) Parameter VCC voltage Symbol VCC1 VCC2 Rating 28 –16 Unit V V VCC voltage at reverse battery condition VCC voltage for full short circuit protection VCC3 28 V VCC voltage under load dump condition Load current VCC4 40 V Self limited 2.0 A W –0.5 to 10 VCC2 to 0 –0.5 to 10 VCC2 to 0 V –0.5 to VCC + 0.5 VCC2 to 0 64 V mJ 120 mJ IL Test Conditions At nominal load current. RI = 1 , RL = 3.2 , RIS = 2 k, td = 400 ms Total power dissipation for whole device (DC) PD Voltage at IN pin VIN Voltage at SEN pin VSEN Voltage at IS pin VIS Inductive load switch-off energy dissipation single pulse EAS Maximum allowable energy under short circuit condition EAS(SC) Channel temperature Tch Dynamic temperature increase while switching Storage temperature ESD susceptibility Tch –40 to +150 60 °C °C Tstg VESD –55 to +150 2000 °C V HBM AEC-Q100-002 std. R = 1.5 k, C = 100 pF 200 V MM AEC-Q100-003 std. R = 0 , C = 200 pF Note: 3.4 V TA = 85°C, Device on 50 mm 50 mm 1.5 mm epoxy PCB 2 FR4 with 6 cm of 70 m copper area VCC = 9 V to 16 V RIN = 2 k, At reverse battery condition, t < 2 min. VCC = 9 V to 16 V RSEN = 2 k, At reverse battery condition, t < 2 min. VCC = 9 V to 16 V RIS = 2 k, At reverse battery condition, t < 2 min. VCC = 13.5 V, IL = 5.5 A, Tch,start < 150°C VCC = 18 V, Tch,start < 150°C, Rsupply = 10 m, Rshort = 50 m Lsupply = 5 H, Lshort = 15 H All voltages refer to ground pin of the device. Thermal Characteristics Parameter Thermal characteristics R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Symbol Rth(ch-a) Rth(ch-c) MIN. — — TYP. 30 1.3 MAX. — — Unit °C/W °C/W Test Conditions All channel Device on 50 mm 50 All channel mm 1.5 mm epoxy PCB FR4 with 6 cm2 of 70 m copper area Page 3 of 26 PD166011T1J 3.5 3.5.1 Preliminary Electrical Characteristics Operation Function (Tch = –40 to 150°C, VCC = 9 to 16 V, unless otherwise specified) Parameter Operating voltage Symbol VCC Operating current per channel IGND Standby current ICC(off) On state resistance per channel Ron Output voltage drop limitation at small load current Von(NL) MIN. 5.5 — — — — — — — — TYP. — 2.5 5.0 0.1 — — 19 35 50 MAX. 28 5.5 10 1.0 8.0 24 25 48 — Unit V mA mV Tch = –40 to 150°C IL = 5 A, Tch = 25°C IL = 5 A, Tch = 150°C IL < 0.5 A 20 — 24 — 28 5 V A VCC = 13.5 V, IL = 40 mA VIN = 0 V A m Test Conditions VIN = 4.5 V, Von < 0.5 V, RL = 12 one channel VIN = 5 V all channel Tch = 25°C VIN = 0 V, VSEN = 0 V, VOUT = 0 V, VIS = 0 V Tch = 125°C Output clamp Von(CL) Output leakage current per channel Input resistance *1 Low level input voltage IL(OFF) RIN VIL — –0.3 100 — — 1.0 V High level input voltage Low level input current High level input current VIH IIL IIH Sense enable input resistance *1 RSEN 3.0 2 5 — — — — 100 10 30 75 — V A A Sense enable low level input voltage VSENL –0.3 — 1.0 V Sense enable high level input voltage VSENH 3.0 — 10 V Sense enable low level input current ISENL 2 — 30 A VSEN = 0.4 V Sense enable high level input current ISENH 5 — 75 A VSEN = 5 V Turn on delay time to 10% VCC td(on) — 30 100 s VCC = 13.5 V, RL = 3.2 Turn off delay time to 90% VCC Turn on time to 90% VCC Turn off time to 10% VCC Slew rate 30% to 70% VCC Slew rate 70% to 30% VCC Energy at turn on Energy at turn off td(off) — 220 600 s — — 0.08 0.05 — — 100 270 0.33 0.35 0.65 0.55 250 700 0.6 0.85 — — s s V/s V/s mJ mJ Note: ton toff dv/dton –dv/dtoff Eon Eoff VIN = 0.4 V VIN = 5 V *1 Not tested, specified by design R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 4 of 26 PD166011T1J 3.5.2 Preliminary Protection Function (Tch = –40 to 150°C, VCC = 9 to 16 V, unless otherwise specified) Parameter Driving capability Dr(capa) Over load detection voltage 1 Von(OvL)1 MIN. — 12 10 8 — 42.5 33 29.5 — 55 42.5 38 200 260 290 4.0 Over load detection voltage 2 Von(OvL)2 0.45 1 1.6 V Turn-on check delay after input signal positive slope td(OC) 400 — — s Thermal shutdown temperature Thermal hysteresis Tth 150 175 — °C Tth Vds(rev) — — — 10 0.8 0.61 — 0.85 0.66 °C V Reverse current through GND pin *1 –IGND — 90 — mA Integrated resistor in GND line *1 RGND — 140 — Output current while GND disconnected *1 IL(GND) — — 1 mA Short circuit detection current Symbol IL5.5,5(SC) IL13.5,5(SC) IL16,5(SC) Output voltage drop per channel in case of reverse battery condition Note: TYP. — 28 26 24 — 75 63 55 — 86 70 60 — — — 5.2 MAX. 55 — — — 110 — — — 130 — — — — — — 6.4 Unit A m Test Conditions Tch = –40°C VCC = 5.5 V, Von = 5 V Tch = 25°C Tch = 105°C Tch = 150°C Tch = –40°C VCC = 13.5 V, Von = 5 V Tch = 25°C Tch = 105°C Tch = 150°C Tch = –40°C VCC = 16 V, Von = 5 V Tch = 25°C Tch = 105°C Tch = 150°C Tch = 25°C, VCC = 16 V Tch = 105°C, VCC = 16 V Tch = 150°C, VCC = 16 V V Tch = 25°C Tch = 150°C IL = –3.5 A, VCC = –13.5 V VCC = –13.5 V IIN = 0 A, ISEN = 0 A, IGND = 0 A, IIS = 0 A *1 Not tested, specified by design R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 5 of 26 PD166011T1J 3.5.3 Preliminary Diagnosis Function (Tch = –40 to 150°C, VCC = 9 to 16 V, VSEN = 5 V, unless otherwise specified) Parameter Symbol MIN. 2.0 TYP. 3.2 MAX. 4.4 Unit V 5.0 6.2 8.0 V IIS,lim 4 — — mA VIN = 0 V Sense signal invalid after negative input slope Fault signal settling time td(fault) — — 1.2 ms VIN = 5 V to 0 V, VOUT = VCC ts(fault) — — 200 s Current sense ratio KILIS 3940 4150 4080 4050 4020 4050 4100 4410 4250 4595 4580 4425 4810 4705 4460 5100 5130 5050 5250 5010 4770 5570 5390 4870 6100 5850 5850 VIN = 0 V, RIS = 2 k, VOUT = 0 to >VOUT(OL) Tch = –40°C IL = 6.0 A Tch = 25°C Tch = 150°C Tch = –40°C IL = 3.0 A Tch = 25°C Tch = 150°C Tch = –40°C IL = 0.5 A Tch = 25°C Tch = 150°C Current sense voltage limitation VIS(lim) 5.0 6.2 8.0 V IIS = 0.5 mA, IL = 5 A Current sense leakage/offset current IIS(LH) — — 3 A VIN = 5 V, IL = 0 A Current sense leakage, while diagnostic disable IIS(dis) — — 5 A VSEN = 0 V, IL = 5 A Current sense settling time to IIS static 10% after positive input slope *1 tsIS(ON) — — 300 s VIN = 0 to 5 V, RL = 3.2 , RIS = 2 k Current sense settling time to IIS static 10% after change of load current *1 tsIS(LC) — — 50 s VIN = 5 V, RIS = 5 k, IL = 3 A to 5 A Sense signal settling time tsIS(SEN) — — 10 s VSEN = 0 V to 5 V, VIN = 0 V, RIS = 5 k, VOUT > VOUT(OL) Sense signal deactivation time *1 tdIS(SEN) — — 10 s VSEN = 5 V to 0 V, VIN = 0 V, RIS = 5 k, VOUT > VOUT(OL) Open load detection threshold at off-state VOUT(OL) Sense signal in case of fault condition VIS,fault Sense signal current limitation Note: Test Conditions VIN = 0 V VIN = 0 V, IIS = 2.5 mA VIN = 5 V *1 Not tested, specified by design R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 6 of 26 PD166011T1J 3.6 Preliminary Function Description 3.6.1 Driving Circuit The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is open or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN pin is pulled down with constant current source. VIN IN 0 RIN IIN VOUT Internal ground VCC OFF ON OFF RGND ON GND t 0 Switching a resistive load Switching lamps VIN VIN 0 0 IL IL 0 0 VOUT VOUT VCC 0 0 IIS IIS 0 R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 t 0 IIS,Iim t Page 7 of 26 PD166011T1J Preliminary Switching an inductive load VIN 0 IL 0 VOUT VCC 0 Von(CL) IIS t 0 The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off, the voltage of OUT falls below 0 V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is not activated. SW1 VCC ZDAZ IN IS SEN RIN RSEN Logic ZDESD Internal ground OUT GND R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 8 of 26 PD166011T1J 3.6.2 Preliminary Short Circuit Protection Case 1: IN pin is high in an overload condition, which includes a short circuit condition. The device shuts down automatically when either or both of following conditions (a, b) is detected. The sense signal is fixed at VIS,fault. Shutdown is latched until the next reset via input. The device shuts down automatically when condition (c) is detected with auto restart by cooling down. (a) IL > IL(SC) (b) Von > Von(OvL)1 after td(OC) (c) Tch > Tth Case 1-(a) IL > IL(SC) VIN Case 1-(b) Von > Von(OvL)1 after td(OC) Short circuit detection VIN 0 IL Short circuit detection 0 IL(SC) IL(SC) IL 0 0 VOUT/VCC VOUT/VCC VBAT Von(OvL)1 Von Von 0 0 td(OC) VIS VIS VIS,fault t 0 Depending on the external impedance R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 VIS,fault t 0 Depending on the external impedance Page 9 of 26 PD166011T1J Preliminary Case1-(c) Tch > Tth Over temperature detection VIN 0 IL(SC) IL 0 VOUT/VCC Von(OvL)2 Von Von(OvL)1 0 td(OC) td(OC) td(OC) Tch Tth VIS VIS,fault t 0 Depending on the external impedance (Evaluation circuit) SEN = High n = 1, 2 VCC SEN OUTn INn GND ISn VBAT VIN VIS Von IIS VOUT RIS IL Rshort : Cable impedance R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 10 of 26 PD166011T1J Preliminary Case 2: Short circuit during on-condition The device shuts down automatically when either or both of following conditions (a) is detected. Detection (a) value is activate after Von(OvL)2. There is hysteresis between detection (a) value and activate (a) value. The sense signal is fixed at VIS,fault. Shutdown is latched until the next reset via input. The device shuts down automatically when condition (b) is detected with auto restart by cooling down. (a) Von > Von(OvL)2 after Von < Von(OvL)2 (b) Tch > Tth Case 2-(a) Von > Von(OvL)2 after Von < Von(OvL)2 VIN Short circuit 0 Short circuit detection 0 IL(SC) IL IL(SC) IL 0 VOUT/VCC Short circuit Short circuit detection VIN 0 VOUT/VCC td(OC) Von(OvL)1 Von(OvL)1 Von(OvL)2 td(OC) Von(OvL)2 0 0 VIS VIS VIS,fault t 0 Depending on the external impedance R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 VIS,fault t 0 Depending on the external impedance Page 11 of 26 PD166011T1J Preliminary Case2-(b) Tch > Tth Short circuit VIN Over temperature detection 0 IL(SC) IL 0 Von<Von(OvL)2 VOUT/VCC Von<Von(OvL)1 Von<Von(OvL)1 Von(OvL)2 Von(OvL)1 VOUT 0 td(OC) td(OC) td(OC) Tch Tth Von<Von(OvL)2 VIS VIS,fault t 0 Depending on the external impedance (Evaluation circuit) SEN = High n = 1, 2 VCC SEN OUTn INn GND ISn VBAT VIN VIS Von IIS RIS IL VOUT Rshort : Cable impedance R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 12 of 26 PD166011T1J 3.6.3 Preliminary Device Behavior at Over Voltage Condition In case of supply voltage greater than VCC4, logic part is clamped by ZDAZ. And current through of logic part is limited by internal ground resistor. In addition, the power transistor switches off in order to protect the load from over voltage. Supply voltage at VCC pin must not apply over VCC4. SW1 VCC ZDAZ RIN IN IS Logic RSEN SEN ZDESD Internal ground OUT GND 3.6.4 Device Behavior at Low Voltage Condition If the voltage supply (VCC) goes down under VCC min (5.5 V), the device shuts down the output. If voltage supply (VCC) increase over VCC min (5.5 V), the device turns on the output automatically. The device keeps off state after under voltage shutdown. VIN 0 IL 0 VOUT/VCC VCC VOUT VCC min (5.5V) 0 R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 t Page 13 of 26 PD166011T1J 3.6.5 Preliminary Loss of Ground Protection In case of complete loss of the device ground connections, but connected load ground, the device keeps in on state or securely changes to or keeps in off state depend on VIN condition. 3.6.6 Driving Capability PD166011 can drive above 200 m as load resistibility include load itself, wire harness, contact resistance of connector, wiring resistibility of PCB at VCC = 9 to 16 V, Tch = 25°C condition. The short circuit detection current changes according VCC voltage and Von voltage for the purpose of to be strength of the robustness under short circuit condition. 100 80 IL(SC) [A] IL16,5(SC) 60 40 20 0 Load resistibility: 200 mΩ 0 4 8 12 16 20 Von [V] R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 14 of 26 PD166011T1J 3.6.7 Preliminary Current Sense Output IIS Von IIS,lim Ron KILIS = IL/IIS 50 mV TYP. Von(NL) IIS(LH) IL IL Current Sense Ratio 7000 Tch = –40°C Tch = 150°C Current Sense Ratio KILIS 6500 6000 5500 5000 4500 4000 3500 3000 0 1 2 3 4 5 6 7 Load Current IL [A] R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 15 of 26 PD166011T1J 3.6.8 Preliminary Measurement Condition Switching waveform of OUT pin IN VOUT ton t toff 90% 70% dV/dton dV/dtoff 30% 10% 3.6.9 t Diagnostics Normal operation to open load condition, pull-up resistor active condition Open load IN OFF ON OFF VOUT Von<Von(OvL)2 IL VIS tsIS(LC) VIS,fault IIS × RIS tsIS(ON) R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 td(fault) Page 16 of 26 PD166011T1J Preliminary Pull-up resistor inactive to active during open load condition Pull-up resistor active IN OFF VOUT IL VIS VIS,fault ts(fault) 3.6.10 Truth Table Normal operation Short circuit to GND Short circuit to VCC Over temperature Open load SEN H H H H H H H H H H INPUT H L H L H L H L H L OUTPUT VCC L *1 L *1 L *1 VCC VCC L *1 L *1 VCC Hi-Z Diagnostic Output IIS = IL/KILIS L *2 VIS,fault L *2 <IIS = IL/KILIS VIS,fault VIS,fault *3 L *2 L *2 VIS,fault in case of OUT>VOUT(OL) Notes: *1 In case of OUT pin is connected to GND via load. *2 In case of IS pin is connected to GND via resistor. *3 IS pin keeps VIS,fault as long as input signal activate after the first thermal shutdown. R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 17 of 26 PD166011T1J 3.7 Preliminary Package Drawings (Unit: mm) JEITA Package Code RENESAS Code Previous Code MASS (TYP.) [g] - PRSP0013FA-A P12S1-100-111 0.4 D1 0.20 M S A B detail of lead end 7 12 L1 E 1 A4 A3 6 θ Lp A D A A2 0.20 M S B HE A5 S A1 e bp y S c S Referance Symbol x M S AB 1.60 ± 0.10 0.20 M S B Dimension in Millimeters Min Nom Max D 6.30 6.40 6.50 D1 7.65 7.80 7.95 E 7.40 7.50 7.60 HE 10.10 10.30 10.50 A1 0.00 0.05 0.10 A2 2.25 2.35 2.45 A 2.55 A3 A4 0.30 0.05 A5 4.10 ± 0.10 4.60 MAX. 0.20 M S B 0.82 bp 0.37 0.42 0.50 c 0.23 0.27 0.32 Lp 0.60 0.80 1.00 1.40 L1 5.10 ± 0.15 5.60 MAX. R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 0.20 M S A θ e 2° 5° 8° 1.00 x 0.20 y 0.10 Page 18 of 26 PD166011T1J 3.8 Preliminary Taping Information This is one type (E1) of direction of the device in the career tape. Draw-out side -E1 TYPE 3.9 Marking Information This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position aren’t indicated. 166011 Lot code *1 Pb-free plaiting marking Internal administrative code Internal administrative code Note: *1. Composition of the lot code Week code (2 digit number) Year code (2 digit number) R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 19 of 26 PD166011T1J 4. Preliminary Typical Characteristics (Tch = 25°C, VCC = 12 V, unless otherwise specified) 20 15 10 5 0 –5 –10 –50 OPERATION CURRENT ALL CHANNEL vs. AMBIENT TEMPERATURE IGND - Operation current all channel - mA IGND - Operation current per channel - mA OPERATION CURRENT PER CHANNEL vs. AMBIENT TEMPERATURE 0 50 100 150 200 0 –5 –10 –50 0 50 100 150 ON STATE RESISTANCE vs. VCC VOLTAGE 200 30 Ron - On-state resistance - mΩ 10 5 0 –5 25 20 15 10 5 0 0 50 100 150 0 200 5 10 15 20 TA - Ambient Temperature - °C VCC - V ON STATE RESISTANCE vs. AMBIENT TEMPERATURE OUTPUT VOLTAGE DROP LIMITATION AT SMALL LOAD CURRENT vs. VCC VOLTAGE 25 20 15 10 5 0 50 100 150 TA - Ambient Temperature - °C R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 200 Von(NL) - Output voltage drop limitation at small load current - mV ICC(off) - Standby current - μA 5 STANDBY CURRENT vs. AMBIENT TEMPERATURE 30 Ron - On-state resistance - mΩ 10 TA - Ambient Temperature - °C 15 0 –50 15 TA - Ambient Temperature - °C 20 –10 –50 20 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 VCC - V Page 20 of 26 PD166011T1J Preliminary OUTPUT CLAMP VOLTAGE (INDUCTIVE LOAD SWITCH OFF) vs. AMBIENT TEMPERATURE 32 100 90 Von(CL) - Output clamp voltage (inductive load switch off) - V Von(NL) - Output voltage drop limitation at small load current - mV OUTPUT VOLTAGE DROP LIMITATION AT SMALL LOAD CURRENT vs. AMBIENT TEMPERATURE 80 70 60 50 40 30 20 10 0 –50 0 50 100 150 26 24 22 20 50 100 150 TA - Ambient Temperature - °C LOW LEVEL INPUT VOLTAGE vs. AMBIENT TEMPERATURE HIGH LEVEL INPUT VOLTAGE vs. AMBIENT TEMPERATURE 200 VIH - High level input voltage - V 2.5 2.0 1.5 1.0 0.5 0 50 100 150 2.0 1.5 1.0 0.5 0 –50 200 0 50 100 150 TA - Ambient Temperature - °C TA - Ambient Temperature - °C LOW LEVEL INPUT CURRENT vs. AMBIENT TEMPERATURE HIGH LEVEL INPUT CURRENT vs. AMBIENT TEMPERATURE 50 50 45 45 40 35 30 25 20 15 10 5 0 –50 0 TA - Ambient Temperature - °C IIH - High level input current - μA VIL - Low level input voltage - V IIL - Low level input current - μA 28 18 –50 200 2.5 0 –50 30 0 50 100 150 TA - Ambient Temperature - °C R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 200 200 40 35 30 25 20 15 10 5 0 –50 0 50 100 150 200 TA - Ambient Temperature - °C Page 21 of 26 SENSE ENABLE LOW LEVEL INPUT VOLTAGE vs. AMBIENT TEMPERATURE 2.5 2.0 1.5 1.0 0.5 0 –50 0 50 100 150 200 VSENH - Sense enable high level input voltage - V Preliminary SENSE ENABLE HIGH LEVEL INPUT VOLTAGE vs. AMBIENT TEMPERATURE 2.5 2.0 1.5 1.0 0.5 0 –50 0 50 100 150 200 TA - Ambient Temperature - °C SENSE ENABLE LOW LEVEL INPUT CURRENT vs. AMBIENT TEMPERATURE SENSE ENABLE HIGH LEVEL INPUT CURRENT vs. AMBIENT TEMPERATURE 50 45 40 35 30 25 20 15 10 5 0 –50 0 50 100 150 200 50 45 40 35 30 25 20 15 10 5 0 –50 0 50 100 150 TA - Ambient Temperature - °C TA - Ambient Temperature - °C TURN ON DELAY TIME TO 10% VCC vs. AMBIENT TEMPERATURE TURN OFF DELAY TIME TO 90% VCC vs. AMBIENT TEMPERATURE 200 VCC = 13.5 V 150 100 50 0 –50 ISENH - Sense enable high level input current - μA TA - Ambient Temperature - °C 0 50 100 150 TA - Ambient Temperature - °C R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 200 td(off) - Turn-off delay time to 90% VCC - μs td(on) - Turn-on delay time to 10% VCC - μs ISENL - Sense enable low level input current - μA VSENL - Sense enable low level input voltage - V PD166011T1J 500 200 VCC = 13.5 V 400 300 200 100 0 –50 0 50 100 150 200 TA - Ambient Temperature - °C Page 22 of 26 PD166011T1J Preliminary TURN ON TIME vs. AMBIENT TEMPERATURE toff - Turn-off time - μs 150 100 50 0 50 100 150 400 300 200 0 50 100 150 TA - Ambient Temperature - °C TA - Ambient Temperature - °C SLEW RATE 30% TO 70% VCC vs. AMBIENT TEMPERATURE SLEW RATE 70% TO 30% VCC vs. AMBIENT TEMPERATURE 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –50 0 –50 200 0 50 100 150 200 –dV/dton - Slew rate 70% to 30% VCC - V/μs dV/dton - Slew rate 30% to 70% VCC - V/μs VCC = 13.5 V 100 0 –50 Von(OvL)1 - Over load detection voltage 1 - V 500 VCC = 13.5 V 200 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –50 0 50 100 150 200 TA - Ambient Temperature - °C TA - Ambient Temperature - °C OVER LOAD DETECTION VOLTAGE 1 vs. AMBIENT TEMPERATURE OVER LOAD DETECTION VOLTAGE 2 vs. AMBIENT TEMPERATURE 6 5 4 3 2 1 0 –50 0 50 100 150 TA - Ambient Temperature - °C R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 200 Von(OvL)2 - Over load detection voltage 2 - V ton - Turn-on time - μs 200 TURN OFF TIME vs. AMBIENT TEMPERATURE 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 –50 0 50 100 150 200 TA - Ambient Temperature - °C Page 23 of 26 Preliminary TURN ON CHECK DELAY AFTER INPUT SIGNAL POSITIVE SLOPE vs. AMBIENT TEMPERATURE VOUT(OL) - Open load detection threshold at off-state - V 1200 800 600 400 200 0 50 100 150 5 4 3 2 1 0 0 5 10 15 20 TA - Ambient Temperature - °C VCC - V OPEN LOAD DETECTION THRESHOLD AT OFF STATE vs. AMBIENT TEMPERATURE SENSE SIGNAL IN CASE OF FAULT CONDITION vs. VCC VOLTAGE 10 6 5 4 3 2 1 0 –50 8 6 4 2 0 0 50 100 150 0 200 5 10 15 20 TA - Ambient Temperature - °C VCC - V SENSE SIGNAL IN CASE OF FAULT CONDITION vs. AMBIENT TEMPERATURE CURRENT SENSE VOLTAGE LIMITATION vs. AMBIENT TEMPERATURE 10 VIS.fault - Sense signal in case of fault condition - V 6 200 VIS.fault - Sense signal in case of fault condition - V VOUT(OL) - Open load detection threshold at off-state - V 1000 0 –50 OPEN LOAD DETECTION THRESHOLD AT OFF STATE vs. VCC VOLTAGE 8 6 4 2 0 –50 0 50 100 150 TA - Ambient Temperature - °C R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 200 VIS(lim) - Current sense voltage limitation - V td(OC) - Turn-on check delay after input signal positive slope - μs PD166011T1J 10 8 6 4 2 0 –50 0 50 100 150 200 TA - Ambient Temperature - °C Page 24 of 26 Preliminary CURRENT SENSE LEAKAGE/OFFSET CURRENT vs. AMBIENT TEMPERATURE CURRENT SENSE LEAKAGE CURRENT vs. AMBIENT TEMPERATURE IIS(dis) - Current sense leakage current - μA IIS(LH) - Current sense leakage/offset current - μA PD166011T1J 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –50 0 50 100 150 200 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –50 50 100 150 200 TA - Ambient Temperature - °C TA - Ambient Temperature - °C 5. 0 Thermal Characteristics TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient thermal resistance - °C/W 1000 Device on 50 mm × 50 mm × 1.5 mm epoxy 2 PCB FR4 with 6 cm of 70 μm copper area 100 Rth(ch-a) = 30°C/W 10 Rth(ch-c) = 1.3°C/W 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse width - s R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 25 of 26 PD166011T1J 6. Preliminary Application Example in Principle to 14 V Battery 100 nF 3.3 V to 5 V VDD Rpu R4 IN1 R1 port VCC to load OUT1 RP1 RP3 MicroController RP2 port R2 IN2 R3 SEN Rf1 10 nF IS1 Cf1 to load OUT2 RS1 port 10 nF An. Input An. Input IS2 Rf2 Cf2 RS2 GND Note: R4 is for Limp home mode for channel 1. When R4 is used, RP1 are necessary. R07DS0851EJ0100 Rev.1.00 Aug 20, 2012 Page 26 of 26 PD166011T1J Data Sheet Revision History Rev. 1.00 Date Aug 20, 2012 Description Summary Page — First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2012 Renesas Electronics Corporation. All rights reserved. Colophon 2.2