Preliminary Data Sheet PD166017T1F R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 INTELLIGENT POWER DEVICE 1. Overview 1.1 Description PD166017 is a Single 6 m N-channel high-side driver in space saving TO-252 package. The device has many integrated features to enable the successful design of high side load control circuits. 1.2 Features Low on-state resistance: 6 m (MAX. at 25°C) Small package: JEDEC 5-pin TO-252 Built-in charge pump Short circuit protection Shutdown by over current detection and over load detection Over temperature protection Shutdown with auto-restart on cooling Built-in diagnostic function Proportional load current sensing Defined fault signal in case of abnormal load condition Under voltage lock out Reverse battery protection by self turn on of N-ch MOSFET AEC-Q100 Qualified RoHS compliant with pure tin plating 1.3 Application Incandescent light bulb (55 W to 65 W) switching with PWM control Switching of all types of 14 V DC grounded loads, such as LED lighting, resistive heating elements, inductive and capacitive loads. Replacement of fuse and relay 2. Ordering Information Part No. PD166017T1F-E1-AY *1 Note: Lead Plating Pure Mate Sn Packing Tape 2500 p/reel Package 5-pin TO-252 (MP-3ZK) *1 Pb-free (This product does not contain Pb in the external electrode.). MSL: 3, profile acc. J-STD-20C Note: The information contained in this document is the one that was obtained when the document was issued, and may be subject to change. R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Page 1 of 22 PD166017T1F 3. Preliminary Specification 3.1 Block Diagram 3 & Tab ICC VCC VCC - VIN IIN IN 2 Internal power supply Charge pump Power supply voltage sense Current detector Control logic VCC 1&5 IL OUT Output voltage sense ESD protection Fault signal output VIN 3.2 Von Temperature sensor Current sense ESD protection Load IIS IS VOUT 4 VIS RIS Pin Arrangement Tab 1 2 3 4 5 OUT VCC OUT IN IS (Top view) 3.2.1 Pin No. 1 2 3/Tab Pin Function Pin Name OUT IN VCC Pin Function Output to load Activates the output, if it shorted to ground 4 IS Supply voltage: tab and pin 3 are internally shorted Sense output, diagnostic feedback 5 OUT Output to load R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Recommended Connection Pin 1 and Pin 5 must be externally shorted If reverse battery protection feature is used, refer to "Power Dissipation under Reverse Battery Condition" Connected to battery voltage with small 100 nF capacitor in parallel If current sense and diagnostic feature are not used, connected to GND via resistor Pin 1 and Pin 5 must be externally shorted Page 2 of 22 PD166017T1F 3.3 Preliminary Absolute Maximum Ratings (TA = 25°C, unless otherwise specified) Parameter VCC voltage Symbol VCC1 VCC2 Rating 28 42 Unit V V VCC voltage under load dump condition VCC voltage at reverse battery condition –VCC –16 V Load current (short circuit current) IL(SC) Self limited A Total power dissipation for whole device (DC) PD 1.2 W Voltage of IN pin VIN V Voltage of IS pin VIS Inductive load switch-off energy dissipation single pulse EAS1 VCC – 28 VCC + 14 VCC – 28 VCC + 14 50 mJ Maximum allowable energy dissipation at shutdown operation Channel temperature EAS2 105 mJ Tch –40 to +150 60 °C °C Tstg VESD –55 to +150 2000 °C V HBM AEC-Q100-002 std. R = 1.5 k, C = 100 pF 200 V MM AEC-Q100-003 std. R = 0 , C = 200 pF Dynamic temperature increase while switching Storage temperature ESD susceptibility Note: 3.4 Tch V Test Conditions RI = 1 , RL = 1.5 , RIS = 1 k, td = 400 ms RL = 1.5 , 1 min. TA = 85°C, Device on 50 mm 50 mm 1.5 mm epoxy PCB 2 FR4 with 6 cm of 70 m copper area DC At reverse battery condition, t < 1 min. DC At reverse battery condition, t < 1 min. VCC = 12 V, IL = 10 A, Tch,start < 150°C VCC = 18 V, Tch,start < 150°C, Lsupply = 5 H, Lshort = 15 H All voltages refer to ground pin of the device. Thermal Characteristics Parameter Thermal characteristics Symbol Rth(ch-a) Rth(ch-c) R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 MIN. — TYP. 45 MAX. — Unit °C/W — 1.7 — °C/W Test Conditions Device on 50 mm 50 mm 1.5 mm epoxy PCB FR4 with 6 cm2 of 70 m copper area Page 3 of 22 PD166017T1F 3.5 3.5.1 Preliminary Electrical Characteristics Operation Function (Tch = 25°C, VCC = 12 V, unless otherwise specified) Parameter Symbol IIH MIN. — TYP. 1.4 MAX. 3.0 Unit mA — — — — 4.7 7.9 170 220 0.2 50 0.5 15 50 6.0 10.5 500 600 0.6 A A s s V/s RL = 1.0 , Tch = –40 to 150°C, refer to "Measurement Condition" 0.2 0.5 V/s 50 to 25% VOUT, RL = 1.0 , Tch = –40 to 150°C, refer to "Measurement Condition" Required current capability of Input switch Input current for turn-off Standby current IIL ICC(off) On state resistance Ron Turn on time Turn off time Slew rate on *1 ton toff dv/dton — — — — — — — — — Slew rate off *1 –dv/dtoff — Note: m Test Conditions Tch = –40 to 150°C RL = 1.0 , Iin = 0 A, Tch = 25°C RL = 1.0 , Iin = 0 A, Tch = 125°C RL = 1.0 , Iin = 0 A, Tch = –40 to 150°C IL = 15 A, Tch = 25°C IL = 15 A, Tch = 150°C 25 to 50% VOUT, RL = 1.0 , Tch = –40 to 150°C, refer to "Measurement Condition" *1 Not tested, specified by design R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Page 4 of 22 PD166017T1F 3.5.2 Preliminary Protection Function (Tch = 25°C, VCC = 12 V, unless otherwise specified) Parameter Symbol On-state resistance at reverse battery condition *1 Ron(rev) Short circuit detection current IL6,3(SC) IL6,6(SC) *1 IL12,3(SC) *1 IL12,6(SC) *1 IL12,12(SC) *1 IL18,3(SC) *1 MIN. — — — 20 10 — — 5 — 76 40 — — 30 — — 10 TYP. 5.4 8.9 40 35 25 30 25 20 155 135 95 130 110 80 109 95 76 MAX. 7.0 12.3 130 — — 100 — — 240 — — 230 — — 180 — — Unit m 185 160 120 153 133 100 112 98 73 92 80 64 2.1 250 — — 220 — — 170 — — 140 — — 3.8 ms Tch = –40°C VCC = 18 V, Von = 3 V Tch = 25°C Tch = 150°C Tch = –40°C VCC = 18 V, Von = 6 V Tch = 25°C Tch = 150°C Tch = –40°C VCC = 18 V, Von = 12 V Tch = 25°C Tch = 150°C Tch = –40°C VCC = 18 V, Von = 18 V Tch = 25°C Tch = 150°C Tch = –40 to 150°C RL = 1.0 , Tch = –40 to 150°C A Test Conditions Tch = 25°C Tch = 150°C Tch = –40°C Tch = 25°C Tch = 150°C Tch = –40°C Tch = 25°C Tch = 150°C Tch = –40°C Tch = 25°C Tch = 150°C Tch = –40°C Tch = 25°C Tch = 150°C Tch = –40°C Tch = 25°C Tch = 150°C VCC = –12 V, IL = –7.5 A, RIS = 1 k VCC = 6 V, Von = 3 V VCC = 6 V, Von = 6 V VCC = 12 V, Von = 3 V VCC = 12 V, Von = 6 V VCC = 12 V, Von = 12 V Turn-on check delay after input current positive slope td(OC) — — 50 — — 50 — — 30 — — 5 0.9 Remaining Turn-on check delay after turn-on time td(OC)–ton 0.65 1.9 — ms Over load detection voltage 1 Von(OvL)1 0.45 0.65 0.90 V Tch = –40 to 150°C Over load detection voltage 2 Under voltage shutdown Von(OvL)2 0.20 0.30 0.50 V Tch = –40 to 150°C VCIN(Uv) — 4.5 — — 5.1 — 48 5.8 5.4 — 6.5 6.0 — 62 V Tch = –40°C Tch = 25°C Tch = 150°C Tch = –40°C Tch = 25°C Tch = 150°C IL = 40 mA, Tch = –40 to 150°C IL18,6(SC) *1 IL18,12(SC) *1 IL18,18(SC) *1 Under voltage restart of charge pump VCIN(CPr) Output clamp voltage (inductive load switch off) Von(CL) — 3.6 3.2 — 4.1 3.7 37 Thermal shutdown temperature *1 Thermal hysteresis *1 Tth 150 175 — °C — 10 — °C Note: Tth V V *1 Not tested, specified by design R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Page 5 of 22 PD166017T1F 3.5.3 Preliminary Diagnosis Function (Tch = 25°C, VCC = 12 V, unless otherwise specified) Parameter Current sense ratio Symbol KILIS MIN. TYP. MAX. Unit 19000 19100 19200 18800 18800 19000 19000 19000 19000 — 22500 22300 22000 24100 22900 22500 34400 28200 23500 60 A Test Conditions KILIS = IL/IIS, IIS < IIS,lim Tch = –40°C IL = 20 A Tch = 25°C Tch = 150°C Tch = –40°C IL = 10 A Tch = 25°C Tch = 150°C Tch = –40°C IL = 4.0 A Tch = 25°C Tch = 150°C VIN = 0 V, IL = 0 A Sense current offset current IIS,offset 15600 16100 16500 14200 15100 16300 10100 12200 14400 — Sense current under fault condition IIS,fault 3.5 6.0 12.0 mA Sense current saturation current IIS,lim 2.5 5.0 8.4 mA Under fault conditions, 8 V < VCC – VIS < 12 V, Tch = –40 to 150°C VIS < VOUT – 6 V, Tch = –40 to 150°C Fault sense signal delay after short circuit detection tsdelay(fault) — 2 6 s Tch = –40 to 150°C Sense current leakage current IIS(LL) — — 0.5 A IIN = 0 A, Tch = –40 to 150°C Current sense settling time to IIS(static) after input current positive slope *1 tson(IS) — — 700 s Tch = –40 to 150°C, RL = 1.0 , IIS = 85% KILIS Current sense settling time during on condition *1 Tsic(IS) — 50 100 s Tch = –40 to 150°C, IL = 10 A *1 Note: 20 A *1 Not tested, specified by design R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Page 6 of 22 PD166017T1F 3.6 Preliminary Function Description 3.6.1 Driving Circuit The driver output turns on, when the input pin is connected to ground through a low impedance path allowing a current of IIH. The driver output turns off, when the input current gets below IIL. For Input pin control circuit design when active reverse battery connection is needed, refer to paragraph 3.6.3. RCC is 100 TYP. ESD protection diode: 46 V TYP. VCC IIN RCC VZ,IN 0 ZD IN VOUT Logic IIN VCC OFF ON OFF ON t 0 Switching a resistive load Switching lamps IIN IIN 0 0 IL IL 0 0 VOUT VOUT VCC 0 0 IIS IIS 0 R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 t 0 IIS,Iim t Page 7 of 22 PD166017T1F Preliminary Switching an inductive load IIN 0 IL 0 VOUT VCC 0 Von(CL) IIS 0 t Avalanche behavior at inductive load switch off When an inductive load is switched off, the power MOS portion goes into avalanche behavior. Maximum allowable energy in avalanche behavior is specified in "Absolute Maximum Ratings" as EAS1. The energy dissipation for an inductive load switch-off single pulse in device (EAS1) is estimated by the following formula as RL = 0 . EAS1 = 1 2 Von(CL) ⋅I ⋅L Von(CL) – VCC 2 R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Page 8 of 22 PD166017T1F 3.6.2 Preliminary Short Circuit Protection Case 1: IIN pin is shorted to ground in an overload condition, which includes a short circuit condition. The device shuts down automatically when either or both of following conditions (a, b) are detected. The sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input. (a) IL > IL(SC) (b) Von > Von(OvL)1 after td(OC) Case 1-(a) IL > IL(SC) Short circuit detection IIN 0 IL(SC) IL (Evaluation circuit) 0 VOUT/VCC VCC VCC VBAT IIN IN Von Von OUT IIS IS VOUT VBAT VIN 0 VIS VOUT RIS IL RL tsdelay(fault) IIS : Cable impedance IIS,fault t 0 Depending on the external impedance tsdelay(fault): Fault sense signal delay after short circuit detection IL(SC): Short circuit detection current Typical short circuit detection current characteristics The short circuit detection current IL(SC) changes according to VCC voltage and Von voltage for the purpose of strengthening the robustness under short circuit conditions. 160 180 Von = 3 V 140 150 Von = 6 V 120 100 IL(SC) [A] IL(SC) [A] 120 80 60 Von = 12 V 90 60 40 30 20 0 0 0 5 R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 10 Von [V] 15 20 5 10 15 20 VCC-VIN [V] Page 9 of 22 PD166017T1F Preliminary Case 1-(b) Von > Von(OvL)1 after td(OC) IIN Short circuit detection (Evaluation circuit) 0 IL(SC) IL VCC 0 IIN IN VOUT/VCC OUT IIS IS VCC Von(OvL)1 VBAT Von VOUT VBAT VIN VIS VOUT RIS IL RL Von 0 : Cable impedance td(OC) IIS IIS,fault t 0 Depending on the external impedance R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 td(oc): Turn-on check delay after input current positive slope Page 10 of 22 PD166017T1F Preliminary Case 2: Short circuit during on-condition The device shuts down automatically when the following condition (a) is detected. Detection of value (a) is activated after Von < Von(OvL)2 with hysteresis between detection (a) value and activation of (a) value. The sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input. (a) Von > Von(OvL)2 after Von < Von(OvL)2 Case 2-(a) Von > Von(OvL)2 after Von < Von(OvL)2 Short circuit Short circuit detection VIN Shutdown 0 IN VCC IL(SC) Von(OvL)2 IL Von(OvL)1 td(OC) 0 VOUT OUT VCC VOUT Von(OvL)2 Shutdown IN VCC Von(OvL)2 0 td(OC) Von(OvL)1 tsdelay(fault) td(OC) IIS,fault VIS OUT t 0 Depending on the external impedance (Evaluation circuit) td(oc): Turn-on check delay after input current positive slope tsdelay(fault): Fault sense signal delay after short circuit detection VCC IL(SC): Short circuit detection current IIN IN VON OUT IIS IS VBAT VIN VIS VOUT RIS IL RL : Cable impedance R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Page 11 of 22 PD166017T1F Preliminary Over-temperature protection The output is switched off if over-temperature is detected. The device switches on again automatically after it cools down. IIN 0 Tch ΔTth Tth VOUT 0 IIS IIS,fault 0 R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 t Page 12 of 22 PD166017T1F 3.6.3 Preliminary Power Dissipation under Reverse Battery Condition In case of a reverse voltage is applied to the device, the N-Ch MOSFET will turn on only if a reverse current can flow from IN pin through RCC and if |VCC – VIN| voltage is in range of 8 V (TYP). In above conditions, power dissipation in the driver is generated by N-Ch Mosfet as well as RCC and RIS0. The power dissipation in the N-Ch MOSFET depends on the load condition. Overall power dissipation Pd(rev) can be calculated as follow. Pd(rev) = Ron(rev) × IL(rev)2 -VCC + (VCC - Vf – IIN(rev) × RIN) × IIN(rev) IL(rev) RCC IIN(rev) = (VCC – 2 × Vf) / (RCC + RIN) IIS(rev) = (VCC – Vf) / (RCC + RIS0 + RIS) RIS0 IN N-ch MOSFET RIN + (VCC – IIS(rev) × RIS) × IIS(rev) IS OUT RIS RL IIS(rev) IIN(rev) Thereverse current through the N-ch MOSFET has to be limited by the connected load. In order to turn on the N-ch MOSFET at reverse polarity condition, the voltage at IN should be around 8V by using a MOSFET or small diode in parallel to the input switch. RIN should be estimated using the following formula. RIN<(|VCC-8V|)/0.08A In case no current would flow from IN pin through RCC, the N-Ch MOSFET will not turn-on. Then power dissipation mainly result from the body diode of the N-Ch MOSFET. 3.6.4 Device Behavior at Low Voltage Condition If the supply voltage (VCC – VIN) drops below VCIN(Uv), the device will shut off and will remain off until the supply voltage (VCC – VIN) recovers above VCIN(CPr). IIN 0 IL 0 VOUT/VCC – VIN VCC – VIN VBAT VCIN(CPr) VOUT 0 R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 VCIN(Uv) t Page 13 of 22 PD166017T1F 3.6.5 Preliminary Current Sense Output VCC RCC is 100 Ω (typ.), VZ,IS = 46 V (typ.), RIS = 1 kΩ nominal. VZ,IS RCC ZD IS IIS RIS0 RIS IIS IIS,lim KILIS = IL/IIS VIS<Vout-6V, IIS<IIS,lim IIS,offset IL IL,lim Current Sense Ratio 39000 Tch = –40°C Tch = 150°C Current Sense Ratio KILIS 34000 29000 24000 19000 14000 9000 4000 0 5 10 15 20 25 Load Current IL [A] R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Page 14 of 22 PD166017T1F 3.6.6 Preliminary Measurement Condition Switching waveform of OUT pin IIN toff ton 90% 50% dV/dton 25% VOUT 50% –dV/dtoff 25% 10% Switching waveform of IS pin IIN tsic(IS) tson(IS) tsic(IS) IIS 3.6.7 Truth Table Input Current L H State — Normal operation Over-temperature or Short circuit Open load R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Output OFF Sense Current 0 mA (IIS(LL)) ON OFF ON Nominal IIS,fault IIS,offset Page 15 of 22 PD166017T1F 5-pin TO-252 (MP-3ZK) 4.0 MIN. (4.4 TYP.) 6.5±0.2 5.0 TYP. 4.3 MIN. 1.0 TYP. 2.3±0.1 0.5±0.1 6 0.8 1 2 3 4 5 1.14 0.6±0.1 0 to 0.25 0.5±0.1 Note No Plating area R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 GAUGE PLANE SEATING PLANE 0.508 1.52±0.12 3.7.1 Package Drawings (Unit: mm) 6.1±0.2 10.3 MAX. (9.8 TYP.) 3.7 Preliminary Page 16 of 22 PD166017T1F 3.8 Preliminary Taping Information This is one type (E1) of direction of the device in the career tape. Draw-out side –E1 TYPE 3.9 Marking Information This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position aren’t indicated. 6 6 0 1 7 Pb-free plating marking Lot code *1 Internal administrative code Note: *1. Composition of the lot code Week code (2 digit number) Year code (last 1 digit number) R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Page 17 of 22 PD166017T1F Typical Characteristics REQUIRED CURRENT CAPABILITY OF INPUT SWITCH vs. AMBIENT TEMPERATURE INPUT CURRENT FOR TURN OFF vs. AMBIENT TEMPERATURE 2.5 500 IIL - Input current for turn-off - μA IIH - Required current capability of input switch - mA 4. Preliminary 2 1.5 1 0.5 0 –50 0 50 100 150 0 50 100 150 STANDBY CURRENT vs. AMBIENT TEMPERATURE ON STATE RESISTENCE vs. VCC – VIN VOLTAGE 200 14 Ron - On-state resistance - mΩ ICC(off) - Standby current - μA 100 TA - Ambient Temperature - °C 30 20 10 0 12 10 8 6 4 2 0 0 50 100 150 0 200 10 5 15 TA - Ambient Temperature - °C VCC – VIN - V ON STATE RESISTENCE vs. AMBIENT TEMPERATURE ON STATE RESISTENCE AT REVERSE BATTERY CONDITION vs. AMBIENT TEMPERATURE Ron(rev) - On-state resistance at reverse battery condition - mΩ 9 Ron - On-state resistance - mΩ 200 TA - Ambient Temperature - °C 40 8 7 6 5 4 3 2 1 0 –50 300 0 –50 200 50 –10 –50 400 0 50 100 150 TA - Ambient Temperature - °C R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 200 10 9 8 7 6 5 4 3 2 1 0 –50 0 50 100 150 200 TA - Ambient Temperature - °C Page 18 of 22 PD166017T1F Preliminary TURN ON TIME vs. AMBIENT TEMPERATURE TURN OFF TIME vs. AMBIENT TEMPERATURE 500 400 ton - Turn-off time - μs ton - Turn-on time - μs 500 VCC – VIN = 6 V 300 200 12 V 18 V 100 VCC – VIN = 6 V 12 V 18 V 300 200 100 0 –50 0 50 100 150 0 –50 200 0 50 100 150 TA - Ambient Temperature - °C TA - Ambient Temperature - °C SLEW RATE ON vs. AMBIENT TEMPERATURE SLEW RATE OFF vs. AMBIENT TEMPERATURE 200 0.6 –dV/dtoff - Slew rate off - V/μs 0.6 dV/dton - Slew rate on - V/μs 400 0.5 0.4 0.3 0.2 0.1 0 –50 0 50 100 150 200 0.5 0.4 0.3 0.2 0.1 0 –50 0 50 100 150 200 TA - Ambient Temperature - °C TA - Ambient Temperature - °C IIS,offset - Sense current offset current - μA SENSE CURRENT OFFSET CURRENT vs. AMBIENT TEMPERATURE 6 5 4 3 2 1 0 –50 0 50 100 150 200 TA - Ambient Temperature - °C R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Page 19 of 22 SENSE CURRENT UNDER FAULT CONDITION vs. AMBIENT TEMPERATURE 12 10 8 6 4 2 0 –50 0 50 100 150 200 SENSE CURRENT SATURATION CURRENT vs. AMBIENT TEMPERATURE 7 6 5 4 3 2 1 0 –50 0 50 100 150 200 TA - Ambient Temperature - °C TA - Ambient Temperature - °C UNDER VOLTAGE SHUTDOWN vs. AMBIENT TEMPERATURE UNDER VOLTAGE RESTART OF CHARGE PUMP vs. AMBIENT TEMPERATURE 6 5 4 3 2 1 0 –50 IIS,lim - Sense current saturation current - mA Preliminary 0 50 100 150 TA - Ambient Temperature - °C R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 200 VCIN(CPr) - Under voltage restart of charge pump - V VCIN(Uv) - Under voltage shutdown - V IIS,fault - Sense current under fault condition - mA PD166017T1F 6 5 4 3 2 1 0 –50 0 50 100 150 200 TA - Ambient Temperature - °C Page 20 of 22 PD166017T1F 5. Preliminary Thermal Characteristics TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient thermal resistance - °C/W 100 Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm2 of 70 μm copper area Rth(ch-A) = 45.0°C/W 10 Rth(ch-C) = 1.7°C/W 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse width - s R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Page 21 of 22 PD166017T1F 6. Preliminary Application Example in Principle 5V Vbat μPD166017 *2 Micro. VCC OUT IN OUTPUT PORT *1 OUT R R Load IS ADC PORT R GND Ris Notes: *1 A free wheel diode is necessary if one of below conditions is fulfilled: a. PD166017 is driving an inductive load and the energy dissipated in the driver during avalanche mode may exceed EAS1. b. The energy that may be dissipated at device turn-off in any type of load condition (i.e: nominal or overload) exceed EAS2. It is recommended that user carefully consider the harness conditions in the target application. *2 When no freewheel diode is used in parallel to the driver load and to prevent oscillation of the VCC voltage during turn-off at high load current, a snubber [R,C] circuit must be connected between VCC and GND as shown on application schematic. Recommended value of R: 10 / 5% 0, 125 W Recommended value of C: 0.25 F / 50 V Ceramic capacitor R07DS0704EJ0100 Rev.1.00 Apr 26, 2012 Page 22 of 22 PD166017T1F Data Sheet Revision History Rev. 1.00 Date Apr 26, 2012 Description Summary Page — First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2012 Renesas Electronics Corporation. All rights reserved. Colophon 1.1