MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES Á High breakdown voltage (BV CEO ≥ 50V) Á High-current driving (Io(max) = –500mA) Á With clamping diodes Á Driving available with PMOS IC output of 6 ~ 16V or with TTL output Á Wide operating temperature range (Ta = –20 to +75°C) Á Output current-sourcing type IN1→ 1 18 →O1 IN2→ 2 17 →O2 IN3→ 3 16 →O3 IN4→ 4 15 →O4 IN5→ 5 14 →O5 IN6→ 6 13 →O6 IN7→ 7 12 →O7 IN8→ 8 11 →O8 VS OUTPUT 10 GND Package type 18P4G(P) NC INPUT APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors FUNCTION The M54563P and M54563FP each have eight circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. A clamping diode is provided between each output and GND. V S and GND are used commonly among the eight circuits. The inputs have resistance of 3kΩ, and voltage of up to 10V is applicable. Output current is 500 mA maximum. Supply voltage V S is 50V maximum. The M54563FP is enclosed in a molded small flat package, enabling space-saving design. 9 1 20 NC IN1→ 2 19 →O1 IN2→ 3 18 →O2 IN3→ 4 17 →O3 IN4→ 5 16 →O4 IN5→ 6 15 →O5 IN6→ 7 14 →O6 IN7→ 8 13 →O7 IN8→ 9 12 →O8 VS 10 OUTPUT 11 GND Package type 20P2N-A(FP) NC : No connection CIRCUIT DIAGRAM VS 20K 3K INPUT 7.2K 1.5K 3K OUTPUT GND The eight circuits share the VS and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE ABSOLUTE MAXIMUM RATINGS Symbol VCEO # VS VI Parameter Conditions Collector-emitter voltage Supply voltage Output, L Input voltage IO IF VR Pd (Unless otherwise noted, Ta = –20 ~ +75 °C) Output current Clamping diode forward current # Topr Unit V 50 V V –0.5 ~ +10 –500 Current per circuit output, H mA mA –500 50 Clamping diode reverse voltage Power dissipation Ta = 25°C, when mounted on board Operating temperature Storage temperature Tstg Ratings –0.5 ~ +50 V W 1.79(P)/1.10(FP) –20 ~ +75 °C –55 ~ +125 °C # : Unused I/O pins must be connected to GND. RECOMMENDED OPERATING CONDITIONS Symbol VS Parameter Supply voltage Output current (Current per 1 circuit when 8 circuits are coming on simultaneously) IO (Unless otherwise noted, Ta = –20 ~ +75°C) min Duty Cycle P : no more than 8% FP : no more than 5% Duty Cycle P : no more than 55% FP : no more than 30% Limits typ max 0 — 50 0 — –350 0 — –100 — — 10 V 0.2 V “H” input voltage 2.4 VIL “L” input voltage 0 ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C) Parameter Test conditions Unit typ+ — max 100 — 1.6 2.4 VI = 3V — — 1.45 0.6 2.0 1.0 — — 2.9 5.6 5.0 15.0 mA — — –1.2 — –2.4 100 V µA Supply leak current VCE (sat) VS = 10V, VI = 2.4V, IO = –350mA Collector-emitter saturation voltage VS = 10V, VI = 2.4V, IO = –100mA II Input current IS VF Supply current VI = 10V VS = 50V, VI = 3V (all input) Clamping diode forward voltage Clamping diode reverse current IF = –350mA VR = 50V # Limits min — IS (leak) # IR V mA VIH Symbol Unit VS = 50V, VI = 0.2V µA V mA + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. # : Unused I/O pins must be connected to GND. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol ton toff Parameter Turn-on time Turn-off time Test conditions CL = 15pF (note 1) Limits typ max — 100 — — 4800 — min Unit ns ns Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE NOTE 1 TEST CIRCUIT TIMING DIAGRAM INPUT VS 50% Measured device 50% INPUT OUTPUT PG 50Ω RL CL 50% 50% OUTPUT ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 0 to 2.4V (2) Input-output conditions : RL = 30Ω, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Output Saturation Voltage Output Current Characteristics Thermal Derating Factor Characteristics –500 M54563P Output current IO (mA) Power dissipation Pd (W) 2.0 1.5 M54563FP 1.0 0.5 0 0 25 50 75 –300 –200 –100 0 100 VS = 10V VI = 2.4V Ta = 75°C Ta = 25°C Ta = –20°C –400 0 0.5 1.0 1.5 2.0 2.5 Output saturation voltage VCE (sat) (V) Ambient temperature Ta (°C) Duty-Cycle-Output Current Characteristics (M54563P) –500 ➀ Duty-Cycle-Output Current Characteristics (M54563P) –500 –400 –400 –300 ➂ –200 –100 0 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 0 20 40 60 Duty cycle (%) 80 ➃ ➄ ➅ ➆ ➇ 100 Output current IO (mA) Output current IO (mA) ➀ ➁ –300 ➁ –200 ➂ –100 0 •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 0 20 40 60 ➃ ➄ ➅ ➆ ➇ 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Duty-Cycle-Output Current Characteristics (M54563FP) –500 Duty-Cycle-Output Current Characteristics (M54563FP) –500 –300 ➁ –200 –100 0 ➂ ➃ ➄ ➅ ➆ ➇ •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 0 20 40 60 80 Output current IO (mA) Output current IO (mA) ➀ –400 –400 –300 –200 ➁ •The output current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. –100 0 100 ➀ 0 Grounded Emitter Transfer Characteristics VS = 20V VS-VO = 4V Ta = 75°C Ta = 25°C Ta = –20°C –400 Forward bias current IF (mA) Output current IO (mA) 80 100 Duty cycle (%) Clamping Diode Characteristics –300 –200 –100 0 0.2 0.4 0.6 0.8 400 300 200 100 0 1.0 Ta = 75°C Ta = 25°C Ta = –20°C 0 Input voltage VI (V) 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Input Characteristics Input Characteristics 1.0 5 VS = 20V Ta = 75°C Ta = 25°C Ta = –20°C VS = 20V Ta = 75°C Ta = 25°C Ta = –20°C 4 Input current II (mA) 0.8 Input current II (mA) •Ta = 75°C 60 500 –500 0.6 0.4 0.2 0 40 Duty cycle (%) 0 20 ➂ ➃ ➄ ➅ ➆ ➇ 3 2 1 0 1 2 3 Input voltage VI (V) 4 5 0 0 2 4 6 8 10 Input voltage VI (V) Aug. 1999