MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54563WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563WP is eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high current driving with extremely low inputcurrent supply. FEATURES ● High breakdown voltage (BVCEO > 50V) ● High-current driving (Io(max) = –500mA) ● With clamping diodes ● Driving available with PMOS IC output of 6 ~ 16V or with TTL output ● Output current-sourcing type PIN CONFIGURATION INPUT IN1→ 1 18 →O1 IN2→ 2 17 →O2 IN3→ 3 16 →O3 IN4→ 4 15 →O4 IN5→ 5 14 →O5 IN6→ 6 13 →O6 IN7→ 7 12 →O7 IN8→ 8 11 →O8 Vs APPLICATIONS Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors 10 9 OUTPUT GND Package type 18P4X CIRCUIT DIAGRAM FUNCTION The M54563WP each have eight circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. A clamping diode is provided between each output and GND. VS and GND are used commonly among the eight circuits. The inputs have resistance of 3kΩ, and voltage of up to 10V is applicable. Output current is 500 mA maximum. Supply voltage VS is 50V maximum. VS 20K INPUT 3K 7.2K 3K 1.5K OUTPUT GND The eight circuits share the VS and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit:Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol # VCEO VS VI IO IF # VR Pd Topr Tstg Parameter Collector-emitter voltage Supply voltage Input voltage Output current Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Conditions Output , L Current per circuit output, H Ta = 25℃, when mounted on board Ratings –0.5 ～ +50 50 –0.5 ～ +10 – 500 – 500 50 1.79 –20 ～ +75 –55 ～ +125 Unit V V V mA mA V W ℃ ℃ # : Unused Input pins must be connected to GND. Jul-2011 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54563WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol Parameter VS min Limits typ max 0 － 50 0 － –350 0 － –100 2.4 － － 10 0.2 Supply voltage Output current (Current per 1 circuit when 8 circuits are coming on simultaneously) IO VIH VIL Duty Cycle no more than 8% Duty Cycle no more than 55% Unit V mA “H” input voltage “L” input voltage 0 V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = －20～＋75℃） Symbol IS(leak) Limits typ＊ － 1.6 1.45 0.6 3.0 5.6 max 100 2.4 2.0 1.0 5.0 15.0 # IF = – 350mA － – 1.35 – 2.4 V VR = 50V － － 100 μA Test conditions Supply leak current VCE(sat) Collector-emitter saturation voltage II Input current IS Supply current Clamping diode forward voltage Clamping diode reverse current VF IR min － － － － － － Parameter # VS = 50V, VI = 0.2V IO = – 350mA VS = 10V, VI = 2.4V IO = – 100mA VI = 3V VI = 10V VS = 50V, VI = 3V(all input) Unit μA V mA mA *：The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions. # : Unused Input pins must be connected to GND. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃） Symbol Parameter Limits Test conditions min ton Turn-on time toff Turn-off time CL = 15pF（note 1） max － － ｎｓ － 4800 － ｎｓ TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Unit typ 100 VS Measured device INPUT 50% 50% OUTPUT PG 50Ω RL OUTPUT CL 50% ｔon 50% ｔoff (1) Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 0 to 2.4V (2) Input-output conditions : RL = 30Ω, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jul-2011 2 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54563WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Output Current Characteristics Thermal Derating Factor Characteristics -500 2.0 VS=10V VI=2.4V Collector current IC(mA) Power dissipation Pd(W) M54563WP 1.5 1.0 0.5 0 0 25 50 75 -300 Ta=75℃ -200 Ta=25℃ -100 Ta=-20℃ 0 100 0 0.5 1.0 1.5 2.0 2.5 Output saturation voltage VCE(sat)(V) Ambient temperature Ta(℃) Duty-Cycle-Output current Characteristics Duty-Cycle-Output current Characteristics -500 -400 -500 ① Output current IO(mA) Output current IO(mA) ① -400 ② -300 ③ ④ -200 •The collector current values represent the current per circuit. •Repeated frequency > 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Vcc=5V •Ta = 25℃ -100 0 0 20 40 60 80 ⑤ ⑥ ⑦ ⑧ -400 -300 ② -200 -100 0 100 •The collector current values represent the current per circuit. •Repeated frequency > 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Vcc=5V •Ta = 75℃ 0 20 40 60 80 ③ ④ ⑤ ⑦⑥ ⑧ 100 Duty cycle (%) Duty cycle (%) Grounded Emitter Transfer Characteristics Clamping Diode Characteristics 500 -500 Forward bias current IF (mA) Output current IO(mA) VS=20V VS-VO=4V -400 -300 Ta=75℃ -200 Ta=25℃ Ta=-20℃ -100 0 0 0.2 0.4 0.6 0.8 400 300 200 Ta=25℃ Ta=75℃ Ta=-20℃ 100 0 1.0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Input voltage VI(V) Jul-2011 3 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54563WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Input Current Characteristics Input Current Characteristics 1.0 5 VS=20V VS=20V 4 Input current II(mA) Input current II(mA) 0.8 0.6 0.4 Ta=75℃ Ta=25℃ 0.2 3 Ta=-20℃ Ta=25℃ 2 Ta=75℃ 1 Ta=-20℃ 0 0 1 2 3 4 0 5 Input voltage VI(V) 0 2 4 6 8 10 Input Voltage VI (V) Jul-2011 4 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54563WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE PACKAGE OUTLINE Jun-2011 5