MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75CBS060 PM75CBS060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75CBS060 FEATURE a) Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Over-temperature protection by detecting Tj of the IGBT chips • 3φ 75A, 600V Current-sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage • Acoustic noise-less 5.5/7.5kW class inverter application APPLICATION Servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 120 106±0.3 7 2.54 23.79 2.54 2.54 2.54 2.54 10.16 10.16 10.16 2.54 2.54 2.54 2.54 2.54 2.54 4 7 10 11 6.5 15 8.5 0.64 1 39 2.5 1 25 R7 7 15 W V U N 19 19 19 19 P 10 9 30 Terminal code LABEL 10 5 6 2 3 28 50 φ5.5 MOUNTING HOLES 1. 2. 3. 4. 5. 6. 7. 8. VWPC WP VWP1 VVPC VP VVP1 VUPC UP 9. 10. 11. 12. 13. 14. 15. VUP1 VNC VN1 WN VN UN Fo Sep. 2001 MITSUBISHI <INTELLIGENT POWER MODULES> PM75CBS060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Rfo=1.5kΩ WP Fo VNC W N VN1 VN UN VWP1 VWPC VP VVP1 VVPC UP VUP1 Gnd In Vcc VUPC Rfo Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Vcc Gnd In Vcc Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT N W V U P MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Conditions VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C Ratings 600 75 150 462 –20 ~ +150 Unit V A A W °C Ratings Unit 20 V 20 V CONTROL PART Symbol VD Supply Voltage Parameter VCIN Input Voltage VFO Fault Output Supply Voltage Conditions Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN • VN • WN-VNC Applied between : FO-VNC IFO Fault Output Current Sink current at FO terminal VD+0.5 V 20 mA Sep. 2001 MITSUBISHI <INTELLIGENT POWER MODULES> PM75CBS060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Symbol Ratings Parameter Supply Voltage Protected by VCC(PROT) OC & SC VCC(surge) Supply Voltage (Surge) Module Case Operating TC Temperature Storage Temperature Tstg Applied between : P-N, Surge value Viso 60Hz, Sinusoidal Charged part to Base, AC 1 min. Conditions VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start (Note-1) Isolation Voltage Unit 400 V 500 V –20 ~ +110 °C –40 ~ +125 °C 2500 Vrms (Note-1) Tc(under the chip) measurement point is below. (Unit : mm) UP Arm Axis X Y IGBT 83.3 3.8 VP FWDi 83.3 –4.3 IGBT 41.8 3.8 WP FWDi 41.8 –4.3 IGBT 16.8 3.8 UN FWDi 16.8 –4.3 IGBT 70.8 –2.3 VN FWDi 70.8 –10.3 IGBT 54.3 –2.3 WN FWDi 54.3 –10.3 IGBT 29.3 –2.3 FWDi 29.3 –10.3 Y Bottom view X –Y P N U V W THERMAL RESISTANCES Symbol Rth(j-c’)Q Rth(j-c’)F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Test Conditions Tc measured point is just under the chips Inverter IGBT part (per 1/6 module) Tc measured point is just under the chips Inverter FWDi part (per 1/6 module) Case to fin, (per 1 module) Thermal grease applied Min. Limits Typ. Max. — — 0.27* °C/W — — 0.47* °C/W — — 0.046 °C/W Min. — — — 0.8 — — — — — — Limits Typ. 1.7 1.7 2.2 1.2 0.15 0.4 2.4 0.5 — — Max. 2.3 2.3 3.3 2.4 0.3 1.0 3.3 1.0 1 10 Unit *: If you use this value, Rth(f-a) should be measured just under the chips. ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Test Conditions Collector-Emitter Saturation Voltage FWDi Forward Voltage VD = 15V, IC = 75A Tj = 25°C (Fig. 1) Tj = 125°C VCIN = 0V, Pulsed –IC = 75A, VD = 15V, VCIN = 15V (Fig. 2) Switching Time VD = 15V, VCIN = 15V↔0V VCC = 300V, IC = 75A Tj = 125°C Inductive Load (Fig. 3) Collector-Emitter Cutoff Current VCE = VCES, VD = 15V (Fig. 4) Tj = 25°C Tj = 125°C Unit V V µs µs µs µs µs mA Sep. 2001 MITSUBISHI <INTELLIGENT POWER MODULES> PM75CBS060 FLAT-BASE TYPE INSULATED PACKAGE CONTROL PART Symbol Parameter Test Conditions VN1-VNC VXP1-VXPC ID Circuit Current VD = 15V, VCIN = 15V Vth(ON) Vth(OFF) Input ON Threshold Voltage Input OFF Threshold Voltage OC Over Current Trip Level Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Tj = –20°C VD = 15V (Fig. 5,6) Tj = 25°C Tj = 125°C SC toff(OC) OT OTr UV UVr IFO(H) IFO(L) tFO Short Circuit Trip Level Over Current Delay Time VD = 15V Over Temperature protection Detect Tj of IGBT chip Supply Circuit Under-Voltage Protection –20 ≤ Tj ≤ 125°C Fault Output Current VD = 15V, VFO = 15V (Note-2) Minimum Fault Output Pulse Width VD = 15V (Note-2) (Note-2) Fault Fault Fault Fault output output output output –20≤ Tj ≤ 125°C, VD = 15V (Fig. 5,6) (Fig. 5,6) Trip level Reset level Trip level Reset level Min. — — 1.2 1.7 — 145 115 Limits Typ. 40 13 1.5 2.0 — 198 — Max. 60 18 1.8 2.3 330 270 — Unit mA V V A — 241 — A — 135 — 11.5 — — — 10 145 125 12.0 12.5 — 10 — 155 — 12.5 — 0.01 15 µs °C °C V V mA mA 1.0 1.8 — ms Min. 2.5 2.5 — Limits Typ. 3.0 3.0 400 is given only when the internal OC, SC, OT & UV protection. of OC, SC, OT & UV protection operate by lower arm. of OC, SC protection given pulse. of OT, UV protection given pulse while over trip level. MECHANICAL RATINGS AND CHARACTERISTICS Symbol — — — Test Conditions Parameter Mounting torque Mounting torque Weight Main terminal Mounting part screw : M5 screw : M5 — Max. 3.5 3.5 — Unit N•m N•m g RECOMMENDED CONDITIONS FOR USE Symbol VCC Parameter Supply Voltage VD Control Supply Voltage VCIN(ON) VCIN(OFF) fPWM Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time tdead Test Conditions Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Using Application Circuit of Fig.8 For IPM’s each input signals (Fig. 7) Recommended value ≤ 400 Unit V 15.0 ± 1.5 V ≤ 0.8 ≥ 4.0 ≤ 20 V V kHz ≥ 2.5 µs (Note-3) With ripple satisfying the following conditions dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak Sep. 2001 MITSUBISHI <INTELLIGENT POWER MODULES> PM75CBS060 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “OC” and “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,V,W) IN (Fo) VCIN P, (U,V,W) Ic V IN (Fo) VCIN U,V,W, (N) VD (all) a) Lower Arm Switching Fig. 2 VEC Test P trr Signal input (Upper Arm) Signal input (Lower Arm) VCE Irr U,V,W CS VCIN U,V,W, (N) VD (all) Fig. 1 VCE(sat) Test VCIN (15V) –Ic V (15V) (0V) Ic Vcc Fo 90% 90% N VD (all) Ic b) Upper Arm Switching 10% 10% 10% tc (on) VCIN Signal input (Upper Arm) tc (off) VCIN U,V,W CS VCIN (15V) 10% P Vcc td (on) tr td (off) tf Fo Signal input (Lower Arm) (ton= td (on) + tr) (toff= td (off) + tf) N Ic VD (all) Fig. 3 Switching time Test circuit and waveform P, (U,V,W) A VCIN (15V) VCIN IN (Fo) Pulse VCE VD (all) U,V,W, (N) Over Current OC IC Fig. 4 ICES Test toff (OC) P, (U,V,W) Constant Current Short Circuit Current IN (Fo) VCC Constant Current SC VCIN IC VD (all) U,V,W, (N) IC Fig. 5 OC and SC Test Fig. 6 OC and SC Test waveform VCINP 0V t VCINN 0V t tdead tdead tdead Fig. 7 Dead time measurement point example Sep. 2001 MITSUBISHI <INTELLIGENT POWER MODULES> PM75CBS060 FLAT-BASE TYPE INSULATED PACKAGE P 20kΩ ≥10µ VUP1 Vcc → VD IF UP OT OUT Si In VUPC + – U GND GND ≥0.1µ VVP1 VD Vcc VP In VVPC Vcc WP W GND GND 20kΩ Vcc ≥10µ IF M OT OUT Si In VWPC → V GND GND VWP1 VD OT OUT Si Fo UN OT OUT Si In GND GND ≥0.1µ N 20kΩ → OT Vcc ≥10µ IF Fo VN OUT Si In GND GND ≥0.1µ 20kΩ → VD Vcc ≥10µ IF Fo WN ≥0.1µ 5V VN1 1kΩ In GND GND VNC Fo OT OUT Si Rfo : Interface which is the same as the U-phase Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers : tPLH, tPHL ≤ 0.8µs, Use High CMR type. Slow switching opto-coupler : CTR > 100% Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system. • • • • • • • Sep. 2001