<Intelligent Power Module> PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE PM800DV1B060 FEATURE a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. d) Compatible V-series package. • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage. APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Publication Date : August 2011 Dimensions in mm 1 <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM C1 VP1 VCC CPI IN TjA TjK IGBT OUT Fo FPO NC FWDi AMP SINK SC GND C2E1 V PC V N1 VCC CNI IN TjA TjK IGBT OUT FNO FWDi AMP SINK Fo SC NC GND V NC E2 MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Ratings Unit VCES Symbol Collector-Emitter Voltage Parameter VD=15V, VCIN=15V Conditions 600 V IC Collector Current TC=25°C 800 A Pulse 1600 ICRM Ptot Total Power Dissipation TC=25°C 2500 W IE Emitter Current TC=25°C 800 A IERM (Free wheeling Diode Forward current) Pulse 1600 Tj Junction Temperature -20 ~ +150 °C Ratings Unit *: Tc measurement point is just under the chip. CONTROL PART Symbol Parameter Conditions VD Supply Voltage Applied between : VP1-VPC, VN1-VNC 20 V VCIN Input Voltage Applied between : CPI-VPC, CNI-VNC 20 V VFO Fault Output Supply Voltage Applied between : FPO-VPC, FNO-VNC 20 V IFO Fault Output Current Sink current at FPO, FNO terminals 20 mA Publication Date : August 2011 2 <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Symbol VCC(PROT) VCC(surge) Parameter Conditions Supply Voltage Protected by VD =13.5V ~ 16.5V SC Inverter Part, Tj =+125°C Start Supply Voltage (Surge) Applied between : C1-E2, Surge value Ratings Unit 400 V 500 V -20 ~ +100 °C -40 ~ +125 °C 2500 V Module case operating TC temperature Tstg Storage Temperature Visol Isolation Voltage 60Hz,Sinusoidal, Charged part to Base plate, AC 1min, RMS *: TC measurement point is just under the chip. THERMAL RESISTANCE Symbol Rth(j-c)Q Parameter Thermal Resistance Rth(j-c)D Limits Conditions Max. (Note.1) - - 0.05 Junction to case, FWDi (per 1 element) (Note.1) - - 0.09 - 0.014 - Contact Thermal Resistance Thermal grease applied (Note.1) Note1: If you use this value, Rth(s-a) should be measured just under the chips. Publication Date : August 2011 Typ. Junction to case, IGBT (per 1 element) Case to heat sink, (per 1 module) Rth(c-s) Unit Min. 3 K/W <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCEsat VEC Parameter Limits Conditions Collector-Emitter Saturation VD=15V, IC=800A Voltage VCIN=0V, Pulsed Emitter-Collector Voltage IE=800A, VD=15V, VCIN= 15V (Fig. 1) Typ. Max. Tj=25°C - 1.85 2.35 Tj=125°C - 1.85 2.35 - 1.7 2.8 0.3 0.8 2.0 - 0.25 0.8 - 0.4 1.0 - 1.4 2.3 - 0.3 1.0 Tj=25°C - - 1 Tj=125°C - - 10 (Fig. 2) ton tc(on) Switching Time VCC=300V, IC=800A Tj=125°C toff Inductive Load (Fig. 3,4) tc(off) Collector-Emitter Cut-off ICES V VD=15V, VCIN=0V← →15V trr VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Current Unit Min. V s mA CONTROL PART Symbol ID Parameter Circuit Current Vth(ON) Input ON Threshold Voltage Vth(OFF) Input OFF Threshold Voltage SC Short Circuit Trip Level Limits Conditions VD=15V, VCIN=15V Unit Min. Typ. Max. VP1-VPC - 2 4 VN1-VNC - 2 4 1.2 1.5 1.8 1.7 2.0 2.3 Applied between : CPI-VPC, CNI-VNC mA V -20≤Tj≤125°C, VD=15V (Fig. 3, 6) 1200 - - A VD=15V (Fig. 3, 6) - 0.2 - s 135 - - - 20 - 11.5 12.0 12.5 - 12.5 - - - 0.01 - 10 15 1.0 1.8 - Short Circuit Current Delay toff(SC) Time OT Trip level Over Temperature Protection Detect Temperature of IGBT chip OT(hys) UVt Supply Circuit Under-Voltage UVr Protection IFO(H) °C Hysteresis Trip level -20≤Tj≤125°C Fault Output Current V Reset level VD=15V, VFO=15V (Note.2) IFO(L) tFO Fault Output Pulse Width VD=15V (Note.2) mA Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it. Publication Date : August 2011 4 ms <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE MECHANICAL RATINGS AND CHARACTERISTICS Symbol Ms Parameter Unit Min. Typ. Max. Mounting part screw : M6 3.92 4.9 5.88 Main terminal part screw : M8 8.83 9.81 10.8 - 720 - Mounting Torque Mt m Limits Conditions N・m Weight - g RECOMMENDED CONDITIONS FOR USE Symbol Parameter Conditions VCC Supply Voltage VD Control Supply Voltage VCIN(ON) Input ON Voltage VCIN(OFF) Input OFF Voltage fPWM PWM Input Frequency Using Application Circuit of Fig. 8 Arm Shoot-through Blocking For IPM’s each input signals tdead Applied across C1-E2 terminals Unit ≤ 400 V 15.0±1.5 V Applied between : VP1-VPC, VN1-VNC (Note.3) Applied between : CPI-VPC, CNI-VNC ≤ 0.8 V ≥ 4.0 ≤ 20 kHz ≥ 3.0 s (Fig. 7) Time Note3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak Publication Date : August 2011 Recommended value 5 <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. ( These test should not be done by using a curve tracer or its equivalent. ) C1(C2) NC V *1 V *1 VD F*O V F*O VD Ic V*C V*C E1(E2) E1(E2) Fig. 1 VCEsat Test C1 C1 V P1 FPO FPO VD1 CPI CPI VPC VPC Vcc NC E1C2 Vcc NC E1C2 V N1 VD2 Fig. 2 VEC Test NC V P1 VD1 V C*I C *I NC C1(C2) NC V N1 FNO FNO V D2 C NI CNI E2 VNC E2 VNC Ic Ic Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform C1(C2) NC A V *1 VD F*O pulse VCE C*I V*C E1(E2) Fig. 5 ICES Test Fig. 6 SC test waveform Fig. 7 Dead time measurement point example Publication Date : August 2011 6 IE-Ic <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE 20k ≥10µ Vcc OUT FPO VD1 IF CPI VPC ≥0.1µ C1 VP1 Fo OT + Vcc SC - IN GND E1C2 (U) 20k ≥10µ VN1 FNO VD2 IF CNI VNC ≥0.1µ 20k ≥10µ Vcc OUT OT Fo SC IN C1 VP1 Vcc OUT FPO VD3 IF CPI ≥0.1µ E2 GND VPC OT Fo SC IN GND E1C2 (V) 20k ≥10µ VN1 FNO VD4 IF CNI VNC ≥0.1µ M Vcc OUT OT Fo SC IN GND E2 C1 20k ≥10µ VP1 FPO VD5 IF CPI VPC ≥0.1µ Vcc OUT OT Fo SC IN GND E1C2 (W) 20k ≥10µ VN1 FNO VD6 IF CNI ≥0.1µ VNC Fig. 8 Vcc OUT OT Fo SC IN GND E2 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; • Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. • Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. • Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type. • Slow switching opto-coupler: CTR > 100% • Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. • Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between C1 and E2 terminal. Publication Date : August 2011 7 <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 800 2.5 Tj=25°C COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (A) 700 600 500 VD=13V VD=17V 400 VD=15V 300 200 100 0 2 1.5 1 VD=15V 0.5 Tj=25°C Tj=125°C 0 0.5 1.0 1.5 2.0 0 200 300 400 500 600 700 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) 800 800 2.5 VD=15V 700 Tj=25°C EMITTER CURRENT IE (A) COLLECTO R-EMITTER SATURATION VOLTAGE VCEsat (V) 100 2.0 1.5 Ic=800A Tj=25°C Tj=125°C 600 500 400 300 200 100 Tj=125°C 1.0 0 12 13 14 15 16 17 0 18 CONTROL VOLTAGE VD (V) Publication Date : August 2011 0.5 1 1.5 EMITTER-COLLECTOR VOLTAGE VEC (V) 8 2 <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS (TYPICAL) 10 1 Vcc=300V SWITCHING TIME tc(on), tc(off) (μs) Tj=25°C Tj=125°C Inductive Load toff 1 ton 0.1 tc(on) 0.1 Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load 0.01 10 100 1000 10 SWITCHING ENERGY CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.5 500 Vcc=300V VD=15V REVERSE RECOVERY TIME trr (μs) VD=15V Tj=25°C Tj=125°C 30 1000 COLLECTOR CURRENT IC (A) Vcc=300V 35 100 COLLECTOR CURRENT IC (A) 40 SWITCHING ENERGY Eon, Eoff (mJ/pulse) tc(off) Eoff Inductive Load 25 20 15 10 5 Eon 0 Tj=25°C 0.4 400 Tj=125°C Irr Inductive Load 0.3 300 0.2 200 trr 0.1 100 0.0 0 200 400 600 800 1000 0 COLLECTOR CURRENT IC (A) Publication Date : August 2011 200 400 600 800 EMITTER CURRENT IE (A) 9 0 1000 REVERSE RECOVERY CURRENT Irr (A) SWITCHING TIME ton, toff (μs) VD=15V <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE FREE WHEELING DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) ID VS. fc CHARACTERISTICS (TYPICAL) 80 Vcc=300V 20 Tj=25°C Tj=25°C Tj=125°C 60 Tj=125°C Inductive Load 50 15 10 40 30 20 5 10 0 0 0 200 400 600 800 0 1000 5 10 15 20 25 EMITTER CURRENT IE (A) fc (kHz) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 2.0 20 UVt 18 VD=15V 1.8 SC (SC of Tj=25°C is normalized 1) UVr 16 14 UVt / UVr (V) VD=15V 70 VD=15V ID (mA) REVESE RECOVERY ENERGY Err (mJ/pulse) 25 12 10 8 6 4 2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 -50 0 50 100 -50 150 Tj (°C) Publication Date : August 2011 0 50 Tj (°C) 10 100 150 <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 1 0.1 Single Pulse 0.01 IGBT Part; Per unit base: Rth(j-c)Q=0.05 K/W FWDi Part; Per unit base: Rth(j-c)D=0.09K/W 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 TIME t (sec) Publication Date : August 2011 11 <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Main Revision for this Edition No. Date Revision Points Pages 1 November 2011 8 Publication Date : August 2011 Output characteristics , “VD=13V” and “VD=17V” were reversed. 12 <Intelligent Power Module > PM800DV1B060 FLAT-BASE TYPE INSULATED PACKAGE Keep safety first in your circuit designs! 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