< Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for 900MHz-band RF power amplifiers 18.0+/-0.3 applications. 7.2+/-0.5 7.6+/-0.3 4-C1 High power gain: 2 Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz 14.0+/-0.4 6.6+/-0.3 1 FEATURES R1.6 High Efficiency: 55%typ. 3 3.0+/-0.4 For output stage of high power amplifiers in 900MHz band Mobile radio sets. PIN 1.Drain 2.Source 3.Gate 5.1+/-0.5 0.10 APPLICATION 2.3+/-0.3 2.8+/-0.3 UNIT:mm RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25°C 71.4 W Pin Input power Zg=Zl=50 6 W ID Drain current - 6 A Tch Channel temperature - 175 °C Tstg Storage temperature - -40 to +175 °C Rth j-c Thermal resistance 2.1 °C/W junction to case Note 1: Above parameters are guaranteed independently. Publication Date : Oct．2011 1 < Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Tc=25°C, UNLESS OTHERWISE NOTED) CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 5 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA VTH Gate threshold voltage VDS=12V, IDS=1mA 1.0 - 3.0 V Pout Output power f=900MHz ,VDD=12.5V 20 25 - W Drain efficiency Pin=3.0W, Idq=1.0A 50 55 - % Load VSWR tolerance VDD=15.2V,Po=20W(PinControl) D Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) Note : Above parameters , ratings , limits and conditions are subject to change. Publication Date : Oct．2011 2 No destroy - < Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 Vgs-Ids CHARACTERISTICS 10 80 8 60 6 Ids(A) CHANNEL DISSIPATION Pch(W) Ta=+25°C Vds=10V 40 4 2 20 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS 1 4 5 Vds VS. Ciss CHARACTERISTICS 10 100 Vgs=5V Ta=+25°C f=1MHz Ta=+25°C 8 80 Ciss(pF) Vgs=4.5V 6 Ids(A) 2 3 Vgs(V) Vgs=4V 4 Vgs=3.5V 2 Vgs=3V 60 40 20 Vgs=2.5V 0 0 Vgs=2V 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 140 14 Ta=+25°C f=1MHz 120 Ta=+25°C f=1MHz 12 10 Crss(pF) 100 Coss(pF) 5 80 60 8 6 40 4 20 2 0 0 0 5 10 Vds(V) 15 0 20 Publication Date : Oct．2011 3 5 10 Vds(V) 15 20 < Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS 100 60 40 ηｄ 10 Gp 20 30 Pin(dBm) 35 35 5 Po 4 15 3 Idd(A) Po(W) 6 20 Idd 10 2 5 1 0 0 4 6 Ta=25°C f=900MHz Vdd=12.5V Idq=1.0A 10 40 20 8 10 Vdd(V) 12 Idd 0 7 Ta=25°C f=900MHz Pin=3.0W Idq=1.0A Zg=ZI=50 ohm 25 60 ηd 0 40 Vdd-Po CHARACTERISTICS 30 15 5 0 25 80 Ｉｄｄ 0 20 20 14 Publication Date : Oct．2011 4 1 2 3 Pin(W) 0 4 5 6 ηd(%) 20 100 Po Ta=+25°C f=900MHz Vdd=12.5V Idq=1.0A 30 120 25 80 Po Pout(W) , Idd(A) 40 30 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 50 < Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W TEST CIRCUIT(f=900MHz) Vdd Vgg C1 4.7OHM C3 22μF,50V C2 6pF 8pF 900MHz L1 L2 RD20HMF1 RF-in RF-OUT 82pF 82pF 5pF 5pF 6pF 9pF 8 6pF 2pF 15 11 17 8 17 4.8 38 53 10.8 90 90 100 C1:1000pF,22000pF in parallel C2:100pF*2 in parallel C3:1000pF,22000pF in parallel 100 Note:Board material PTFE substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm L1:1Turn,I.D3mm,D1.5mm silver plateted copper wire L2:1Turn,I.D3mm,D1.5mm silver plateted copper wire Publication Date : Oct．2011 5 < Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=900MHz Zout f=900MHz Zin Zo=10 Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 900 1.78+j2.50 2.52+j1.76 Po=20W, Vdd=12.5V,Pin=3W Publication Date : Oct．2011 6 < Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W RD20HMF1 S-PARAMETER DATA (@Vdd=12.5V,Id=800mA) Freq [MHz] 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 S11 (mag) 0.862 0.868 0.872 0.882 0.897 0.912 0.917 0.926 0.934 0.947 0.953 0.959 0.962 0.966 0.965 0.963 0.958 0.956 0.955 0.953 0.954 0.954 0.956 0.951 0.954 0.946 0.949 0.942 0.946 0.938 S21 (ang) -168.4 -173.3 -174.8 -174.8 -176.1 -176.8 -177.8 -178.6 -179.3 179.5 178.6 177.2 176.4 174.8 173.6 172.0 170.4 168.8 166.9 165.2 163.2 160.9 159.0 156.6 154.8 152.6 150.4 148.1 146.1 144.1 (mag) 8.814 4.213 2.614 1.820 1.343 1.028 0.812 0.663 0.560 0.482 0.421 0.358 0.320 0.292 0.269 0.244 0.222 0.202 0.186 0.177 0.168 0.160 0.151 0.139 0.129 0.124 0.114 0.105 0.099 0.094 S12 (ang) 83.5 70.7 60.4 52.2 44.6 38.7 33.5 29.4 25.9 23.0 19.7 16.8 14.3 12.3 10.2 8.1 6.2 3.8 1.9 0.3 -2.0 -3.6 -6.2 -8.1 -10.0 -12.1 -13.3 -13.0 -12.1 -10.3 Publication Date : Oct．2011 7 (mag) 0.016 0.014 0.012 0.011 0.009 0.007 0.006 0.005 0.006 0.007 0.008 0.009 0.011 0.013 0.015 0.016 0.018 0.020 0.022 0.024 0.026 0.028 0.030 0.032 0.034 0.037 0.039 0.040 0.041 0.044 S22 (ang) -4.3 -10.9 -11.0 -16.2 -12.5 -5.3 7.6 25.8 43.8 54.0 62.2 68.5 70.8 75.6 74.7 75.4 76.9 74.8 74.8 73.3 74.1 71.7 70.0 67.4 65.4 63.6 60.1 56.5 54.0 51.0 (mag) 0.798 0.813 0.834 0.856 0.876 0.887 0.907 0.920 0.930 0.941 0.947 0.950 0.949 0.951 0.954 0.944 0.946 0.949 0.945 0.947 0.945 0.945 0.943 0.935 0.935 0.936 0.934 0.933 0.932 0.931 (ang) -172.5 -173.9 -174.6 -174.8 -175.6 -175.6 -176.6 -177.9 -178.6 -179.0 -179.9 179.3 178.5 177.8 176.7 175.4 174.7 173.2 171.8 170.1 168.6 166.9 164.7 162.6 160.4 158.0 155.2 152.4 149.9 147.2 < Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Oct．2011 8 < Silicon RF Power MOS FET (Discrete) > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Oct．2011 9